Mona Zebarjadi

Power Factor Enhancement by Modulation Doping in Bulk Nanocomposites

We introduce the concept of modulation doping in three-dimensional nanostructured bulk materials to increase the thermoelectric figure of merit. Modulation-doped samples are made of two types of nanograins (a two-phase composite), where dopants are incorporated only into one type. By band engineering, charge carriers could be separated from their parent grains and moved into undoped grains, which would result in enhanced mobility of the carriers in comparison to uniform doping due to a reduction of ionized impurity scattering. The electrical conductivity of the two-phase composite can exceed that of the individual components, leading to a higher power factor. We here demonstrate the concept via experiment using composites made of doped silicon nanograins and intrinsic silicon germanium grains.

Enhancement of thermoelectric properties by modulation-doping in silicon germanium alloy nanocomposites.

Modulation-doping was theoretically proposed and experimentally proved to be effective in increasing the power factor of nanocomposites (Si(80)Ge(20))(70)(Si(100)B(5))(30) by increasing the carrier mobility but not the figure-of-merit (ZT) due to the increased thermal conductivity. Here we report an alternative materials design, using alloy Si(70)Ge(30) instead of Si as the nanoparticles and Si(95)Ge(5) as the matrix, to increase the power factor but not the thermal conductivity, leading to a ZT of 1.3 ± 0.1 at 900 °C.

Effect of nanoparticle scattering on thermoelectric power factor

The effect of nanoparticles on the thermoelectric power factor is investigated using the relaxation time approximation. The partial-wave technique is used for calculating the nanoparticle scattering cross section exactly. We validate our model by comparing its results to the experimental data obtained for ErAs:InGaAlAs samples. We use the theory to maximize the power factor with respect to nanoparticle and electron concentrations as well as the barrier height. We found that at the optimum of the power factor, the electron concentration is usually higher in the sample with nanoparticles, implying that Seebeck is usually unchanged and conductivity is increased.

High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

Rare-earth impurities in III–V semiconductors are known to self-assemble into semimetallic nanoparticles which have been shown to reduce lattice thermal conductivity without harming electronic properties. Here, we show that adjusting the band alignment between ErAs and In0.53Ga0.47−XAlXAs allows energy-dependent scattering of carriers that can be used to increase thermoelectric power factor. Films of various Al concentrations were grown by molecular beam epitaxy, and thermoelectric properties were characterized. We observe concurrent increases in electrical conductivity and Seebeck coefficient with increasing temperatures, demonstrating energy-dependent scattering. We report the first simultaneous power factor enhancement and thermal conductivity reduction in a nanoparticle-based system, resulting in a high figure of merit, ZT=1.33 at 800 K.

High-performance thermoelectric nanocomposites from nanocrystal building blocks

The efficient conversion between thermal and electrical energy by means of durable, silent and scalable solid-state thermoelectric devices has been a long standing goal. While nanocrystalline materials have already led to substantially higher thermoelectric efficiencies, further improvements are expected to arise from precise chemical engineering of nanoscale building blocks and interfaces. Here we present a simple and versatile bottom–up strategy based on the assembly of colloidal nanocrystals to produce consolidated yet nanostructured thermoelectric materials. In the case study on the PbS–Ag system, Ag nanodomains not only contribute to block phonon propagation, but also provide electrons to the PbS host semiconductor and reduce the PbS intergrain energy barriers for charge transport. Thus, PbS–Ag nanocomposites exhibit reduced thermal conductivities and higher charge carrier concentrations and mobilities than PbS nanomaterial. Such improvements of the material transport properties provide thermoelectric figures of merit up to 1.7 at 850 K.

Low-temperature thermoelectric power factor enhancement by controlling nanoparticle size distribution.

Coherent potential approximation is used to study the effect of adding doped spherical nanoparticles inside a host matrix on the thermoelectric properties. This takes into account electron multiple scatterings that are important in samples with relatively high volume fraction of nanoparticles (>1%). We show that with large fraction of uniform small size nanoparticles (∼1 nm), the power factor can be enhanced significantly. The improvement could be large (up to 450% for GaAs) especially at low temperatures when the mobility is limited by impurity or nanoparticle scattering. The advantage of doping via embedded nanoparticles compared to the conventional shallow impurities is quantified. At the optimum thermoelectric power factor, the electrical conductivity of the nanoparticle-doped material is larger than that of impurity-doped one at the studied temperature range (50-500 K) whereas the Seebeck coefficient of the nanoparticle doped material is enhanced only at low temperatures (∼50 K).

Thermoelectric power generator module of 16×16 Bi2Te3 and 0.6% ErAs:(InGaAs)1−x(InAlAs)x segmented elements

We report the fabrication and characterization of thermoelectric power generator modules of 16×16 segmented elements consisting of 0.8 mm thick Bi2Te3 and 50 μm thick ErAs:(InGaAs)1−x(InAlAs)x with 0.6% ErAs by volume. An output power up to 6.3 W was measured when the heat source temperature was at 610 K. The thermoelectric properties of (InGaAs)1−x(InAlAs)x were characterized from 300 up to 830 K. The finite element modeling shows that the performance of the generator modules can further be enhanced by improving the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.

Thermoelectric transport perpendicular to thin-film heterostructures calculated using the Monte Carlo technique

The Monte Carlo technique is used to calculate electrical as well as thermoelectric transport properties across thin-film heterostructures. We study a thin InGaAsP barrier layer sandwiched between two InGaAs contact layers, when the barrier thickness is in the

Nanoengineered Materials for Thermoelectric Energy Conversion

50\phantom{\rule{0.3em}{0ex}}\mathrm{nm}\char21{}2000\phantom{\rule{0.3em}{0ex}}\mathrm{nm}

Experimental determination of the Lorenz number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

range. We found that with decreasing size, the effective Seebeck coefficient is increased substantially. The transition between pure ballistic thermionic transport and fully diffusive thermoelectric transport is also described.