Montgomery Jaritz
RWTH Aachen University
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Featured researches published by Montgomery Jaritz.
ACS Applied Materials & Interfaces | 2018
Maximilian Gebhard; Lukas Mai; Lars Banko; Felix Mitschker; Christian Hoppe; Montgomery Jaritz; Dennis Kirchheim; Christoph Zekorn; Teresa de los Arcos; Dario Grochla; Guido Grundmeier; Peter Awakowicz; Alfred Ludwig; Anjana Devi
A study on the plasma-enhanced atomic layer deposition of amorphous inorganic oxides SiO2 and Al2O3 on polypropylene (PP) was carried out with respect to growth taking place at the interface of the polymer substrate and the thin film employing in situ quartz-crystal microbalance (QCM) experiments. A model layer of spin-coated PP (scPP) was deposited on QCM crystals prior to depositions to allow a transfer of findings from QCM studies to industrially applied PP foil. The influence of precursor choice (trimethylaluminum (TMA) vs [3-(dimethylamino)propyl]-dimethyl aluminum (DMAD)) and of plasma pretreatment on the monitored QCM response was investigated. Furthermore, dyads of SiO2/Al2O3, using different Al precursors for the Al2O3 thin-film deposition, were investigated regarding their barrier performance. Although the growth of SiO2 and Al2O3 from TMA on scPP is significantly hindered if no oxygen plasma pretreatment is applied to the scPP prior to depositions, the DMAD process was found to yield comparable Al2O3 growth directly on scPP similar to that found on a bare QCM crystal. From this, the interface formed between the Al2O3 and the PP substrate is suggested to be different for the two precursors TMA and DMAD due to different growth modes. Furthermore, the residual stress of the thin films influences the barrier properties of SiO2/Al2O3 dyads. Dyads composed of 5 nm Al2O3 (DMAD) + 5 nm SiO2 exhibit an oxygen transmission rate (OTR) of 57.4 cm3 m-2 day-1, which correlates with a barrier improvement factor of 24 against 5 when Al2O3 from TMA is applied.
Journal of Physics D | 2017
Montgomery Jaritz; Henrik Behm; C. Hopmann; Dennis Kirchheim; Felix Mitschker; Peter Awakowicz
The influence of ultraviolet (UV) radiation from oxygen and argon pretreatment plasmas on a plastic substrate has not been fully understood yet. In particular, its influence on the adhesion properties has not been sufficiently researched so far. This paper addresses this issue by comparing the bond strength of a plasmapolymerized silicon organic coating (SiO x C y H z ) on polypropylene (PP) after oxygen and argon plasma pretreatment and pretreatment by UV radiation emitted by the same plasmas. The UV radiation is isolated from the other species from the plasma by means of a magnesium fluoride (MgF2) optical filter. It could be shown that UV radiation originating from an oxygen plasma has a significant impact on both substrate surface chemistry and coating adhesion. The same maximum bond strength enhancement can be reached by pretreating the polypropylene surface either with pulsed oxygen plasma, or with only the UV radiation from this oxygen plasma. Also, similar surface chemistry and topography modifications are induced. For argon plasma no significant influence of its UV radiation on the substrate could be observed in this study.
Journal of Coatings Technology and Research | 2018
Dennis Kirchheim; Stefan Wilski; Montgomery Jaritz; Felix Mitschker; Moritz Oberberg; Jan Trieschmann; Lars Banko; Markus Brochhagen; Rabea Schreckenberg; Christian Hopmann; Marc Böke; Jan Benedikt; Teresa de los Arcos; Guido Grundmeier; Dario Grochla; Alfred Ludwig; Thomas Mussenbrock; Ralf Peter Brinkmann; Peter Awakowicz
Plasma reactors for the application of silicon oxide coatings (SiOx) are often customized to optimize the processes regarding substrate properties and targeted functionalities. The design of these reactors is often based on qualitative considerations. This paper evaluates the use of a numerical, free simulation software for continuous mechanical problems (OpenFOAM) as a tool to evaluate reactor design options. As demonstrator for this purpose serves a given reactor for large-area pulsed microwave plasmas with a precursor inlet in the form of a shower ring. Previous results indicate that the shower ring may lead to an inhomogeneity in plasma and coatings properties along the substrate surface. Thus, a new precursor inlet design shall be developed. For this, the distribution of the process gases in the reactor for a variety of gas inlet designs and gas flows was simulated and a design chosen based on the results. The reactor was modified accordingly, and the simulations correlated with experimental results of plasma and coating properties. The results show that, despite many simplifications, a simulation of the neutral gas distribution using an open-access software can be a viable tool to support reactor and process design development.
Journal of Physics D | 2017
Dennis Kirchheim; Montgomery Jaritz; Felix Mitschker; Maximilian Gebhard; Markus Brochhagen; Christian Hopmann; Marc Böke; Anjana Devi; Peter Awakowicz
Journal of Physics D | 2017
Dennis Kirchheim; Stefan Wilski; Montgomery Jaritz; Felix Mitschker; Maximilian Gebhard; Markus Brochhagen; Marc Böke; Jan Benedikt; Peter Awakowicz; Anjana Devi; C. Hopmann
Journal of Physics D | 2017
Stefan Wilski; Jens Wipperfürth; Montgomery Jaritz; Dennis Kirchheim; Felix Mitschker; Peter Awakowicz; Christian Hopmann
Journal of Physics D | 2017
Montgomery Jaritz; Christian Hopmann; Henrik Behm; Dennis Kirchheim; Stefan Wilski; Dario Grochla; Lars Banko; Alfred Ludwig; Marc Böke; Jörg Winter; Hendrik Bahre
Journal of Physics D | 2017
Felix Mitschker; Simon Steves; Maximilian Gebhard; Marcel Rudolph; L. Schücke; Dennis Kirchheim; Montgomery Jaritz; Markus Brochhagen; Ch Hoppe; Marc Böke; Jan Benedikt; Ignacio Giner; T. de los Arcos; C. Hopmann; Guido Grundmeier; Anjana Devi; Peter Awakowicz
Journal of Physics D | 2018
Felix Mitschker; Teresa de los Arcos; Ch Hoppe; Guido Grundmeier; Peter Awakowicz; L. Schücke; Montgomery Jaritz; Christian Hopmann
23rd International Symposium on Plasma Chemistry | 2017
Christian Hopmann; Dennis Kirchheim; Stefan Wilski; Montgomery Jaritz