Morimasa Kaminishi

Threshold Current Density Analysis of Highly Strained GaInNAs Multiple Quantum Well Lasers Grown By Metalorganic Chemical Vapor Deposition

Highly strained GaInAs/GaAs quantum wells (QWs) [single quantum well (SQW), double quantum well (DQW) and triple quantum well (TQW)] are grown by metalorganic chemical vapor deposition (MOCVD), and GaInNAs/GaAs lasers (SQW and TQW) are fabricated with different numbers of wells to investigate their characteristics. The low threshold current density of 541 A/cm2 and the lasing wavelength of 1.276 µm are obtained by the SQW laser with cavity length of 2070 µm. The threshold current density of 1.41 kA/cm2 and the lasing wavelength of 1.296 µm are obtained by the TQW laser with cavity length of 1140 µm under pulsed operation at room temperature. From the threshold current density analysis, it is evident that their crystal growth and fabrication are successful. The threshold current density of the vertical cavity surface-emitting laser (VCSEL) is also discussed.

Low threshold operation of MOCVD grown 1.3 /spl mu/m range GaInNAs triple quantum-well lasers with low N content GaNAs barrier layers

GaInNAs TQW lasers with different barrier materials grown by MOCVD were fabricated to evaluate their characteristics. It was confirmed that the J/sub th/ of the lasers with N containing barriers was lower than that of lasers with no N containing barriers. The lowest J/sub th/ have been realized with GaAsN (N:0.27 and 0.8%) barriers in GaInNAs lasers. The very low J/sub th/ of 120 A/cm/sup 2//well for 1.27 /spl mu/m laser grown with optimized growth condition have been realized with low N containing GaNAs barriers.

MOCVD grown GaInNAs lasers

Summary form only given. We demonstrated the first electrically pumped CW operation of a 1.26 /spl mu/m MOCVD grown GaInNAs VCSEL. Thus far this is the only report of an electrically pumped GalnNAs VCSEL grown by MOCVD, which is suitable for mass production. The threshold current and voltage of a 10 /spl times/ 10 /spl mu/m/sup 2/ aperture device under CW operation were 7.6 mA and 2.8 V, respectively. Highly strained GaInAs QWs were grown by MOCVD. We report the well number dependence of the photoluminescence (PL) and laser characteristics of highly strained GaIn(N)As MQWs. We also discuss the possibility of applying them to 1.3 /spl mu/m GaInNAs VCSELs. The PL intensity versus the PL peak wavelength of the GaInAs QWs is shown. The high luminescence intensities were obtained up to 1.20 /spl mu/m, 1.18 /spl mu/m and 1.17 /spl mu/m in the SQW, DQW and TQW, respectively.