Muhammad Kashif

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Purpose n n n n nThe quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl- and HF-last Ge surface. n n n n nDesign/methodology/approach n n n n nAfter wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. n n n n nFindings n n n n nIt was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface. n n n n nOriginality/value n n n n nThe novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.

Study on Morphological, Optical and Electrical Properties of Graphene Oxide (GO) and Reduced Graphene Oxide (rGO)

In this work, graphene oxide (GO) is synthesized via chemical method (improved method) and reduced graphene oxide (rGO) using thermal treatment. The GO and rGO thin films were coated on a glass substrate by using drop casting method. The GO and rGO thin film were characterized by scanning electron microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR) to make sure the morphological and optical characteristics of the thin film. In addition, the electrical studies were performed by current-voltage (I-V) characteristic. The rGO thin film displays higher conductivity in comparison with GO which is 4.12 x 10-5 S/cm, and also affected the morphological (SEM) and optical properties (FTIR). Morphological and optical data confirms that rGO losses the oxygen groups compare to GO.

Design and Implementation of an Efficient Hybrid Parallel-Prefix Ling Adder Using 0.18micron CMOS Technology in Standard Cell Library

This This paper addresses a novel technique in implementing hybrid parallel-prefix adder (HPA) incorporating prefix-tree structure with Carry Select Adder (CSEA). Ling’s algorithm is used to optimise the pre-processing blocks (white nodes) and intermediate Generate-Propagate blocks (Black nodes) of the prefix tree to minimise the congestion of wires which contributes to reduction in chip size and to improve performance. The resulting prefix-tree arrangement is then merged into a sequence of modified CSEA. Experimental results show that HPA has speed improvement of 62% and 13% power reduction in comparison of the traditional Carry Look-Ahead Adder (CLA).