Muhammad Y. Bashouti

Tuning the Electrical Properties of Si Nanowire Field‐Effect Transistors by Molecular Engineering

Exposed facets of n-type silicon nanowires (Si NWs) fabricated by a top-down approach are successfully terminated with different organic functionalities, including 1,3-dioxan-2-ethyl, butyl, allyl, and propyl-alcohol, using a two-step chlorination/alkylation method. X-ray photoemission spectroscopy and spectroscopic ellipsometry establish the bonding and the coverage of these molecular layers. Field-effect transistors fabricated from these Si NWs displayed characteristics that depended critically on the type of molecular termination. Without molecules the source-drain conduction is unable to be turned off by negative gate voltages as large as -20 V. Upon adsorption of organic molecules there is an observed increase in the on current at large positive gate voltages and also a reduction, by several orders of magnitude, of the off current at large negative gate voltages. The zero-gate voltage transconductance of molecule-terminated Si NW correlates with the type of organic molecule. Adsorption of butyl and 1,3-dioxan-2-ethyl molecules improves the channel conductance over that of the original SiO(2)-Si NW, while adsorption of molecules with propyl-alcohol leads to a reduction. It is shown that a simple assumption based on the possible creation of surface states alongside the attachment of molecules may lead to a qualitative explanation of these electrical characteristics. The possibility and potential implications of modifying semiconductor devices by tuning the distribution of surface states via the functionality of attached molecules are discussed.

Nanowire Arrays in Multicrystalline Silicon Thin Films on Glass: A Promising Material for Research and Applications in Nanotechnology

Silicon nanowires (SiNW) were formed on large grained, electron-beam crystallized silicon (Si) thin films of only ∼6 μm thickness on glass using nanosphere lithography (NSL) in combination with reactive ion etching (RIE). Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) studies revealed outstanding structural properties of this nanomaterial. It could be shown that SiNWs with entirely predetermined shapes including lengths, diameters and spacings and straight side walls form independently of their crystalline orientation and arrange in ordered arrays on glass. Furthermore, for the first time grain boundaries could be observed in individual, straightly etched SiNWs. After heat treatment an electronic grade surface quality of the SiNWs could be shown by X-ray photoelectron spectroscopy (XPS). Integrating sphere measurements show that SiNW patterning of the multicrystalline Si (mc-Si) starting thin film on glass substantially increases absorption and reduces reflection, as being desired for an application in thin film photovoltaics (PV). The multicrystalline SiNWs directly mark a starting point for research not only in PV but also in other areas like nanoelectronics, surface functionalization, and nanomechanics.

Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

A simple self-catalyzed and mask-free approach will be presented to grow GaN rods and nanorods based on the metal-organic vapor phase epitaxy technique. The growth parameter dependent adjustment of the morphology of the structures will be discussed. Rods and nanorods with diameters reaching from a few μm down to 100u2009nm, heights up to 48u2009μm, and densities up to 8⋅107u2009cm–2 are all vertically aligned with respect to the sample surface and exhibiting a hexagonal shape with smooth sidewall facets. Optical properties of GaN nanorods were determined using cathodoluminescence. It will be shown that the optical properties can be improved just by reducing the Ga precursor flow. Furthermore, for regular hexagonal shaped rods and nanorods, whispering gallery modes with quality factors up to 500 were observed by cathodoluminescence pointing out high morphological quality of the structures. Structural investigations using transmission electron microscopy show that larger GaN nanorods (diameteru2009>u2009500u2009nm) contain threadi...

Study of iron-catalysed growth of ?-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques

In this paper, we demonstrate a new catalyst (Fe) to grow single crystalline beta-gallium oxide (?-Ga2O3) nanowires (NWs) via the vapour?liquid?solid mechanism using the chemical vapour deposition technique. The structural studies of these NWs showed the highly crystalline monoclinic phase of Ga2O3. This was confirmed by detailed scanning transmission electron microscope investigations demonstrating the NW to be single crystalline ?-Ga2O3, growing along the normal of the plane. We also compared Raman and cathodoluminescence (CL) properties of the as-grown ?-Ga2O3 NWs with a bulk Ga2O3 single crystal grown by the Czochralski method. It was observed that Raman peak positions of a single ?-Ga2O3 NW had a red frequency shift of about 0.3?1.4?cm?1 as compared to a bulk Ga2O3 single crystal, which was in fact quite small. In addition, the CL measurements of ?-Ga2O3 NWs and the bulk Ga2O3 single crystal exhibited similar spectra, having a strong broad UV?blue emission band and a weak red emission band. Moreover, the structural, morphological and optical properties of Fe-catalysed ?-Ga2O3 NWs were comparable to those of Au-catalysed ?-Ga2O3 NWs.

Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy.

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200 °C). At high temperatures (T≥ 200 °C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.

Engineering Nanoporous Iron(III) Oxide into an Effective Water Oxidation Electrode

The geometric effects of nanostructuring a pure Fe2O3 surface on its electrochemical water oxidation performance at neutral pH were systematically explored. Atomic layer deposition was used to coat the inner walls of cylindrical “anodic” nanopores ordered in parallel arrays with a homogeneous Fe2O3 layer. Annealing and electrochemical treatments generated a roughened surface, as demonstrated by X‐ray photoelectron spectroscopy and electrochemical impedance spectroscopy, the larger geometric area of which increases current densities. Combining these treatments with the “anodic” pore geometry delivered an effective increase in turnover by almost three orders of magnitude with respect to a smooth, planar Fe2O3 surface. However, the current density depended on the pore length in a non‐monotonic manner. An optimal length was found that maximized turnover by equating the rate of transport in the electrolyte with that of charge transfer across the interface.

Kinetic study of H-terminated silicon nanowires oxidation in very first stages

Oxidation of silicon nanowires (Si NWs) is an undesirable phenomenon that has a detrimental effect on their electronic properties. To prevent oxidation of Si NWs, a deeper understanding of the oxidation reaction kinetics is necessary. In the current work, we study the oxidation kinetics of hydrogen-terminated Si NWs (H-Si NWs) as the starting surfaces for molecular functionalization of Si surfaces. H-Si NWs of 85-nm average diameter were annealed at various temperatures from 50°C to 400°C, in short-time spans ranging from 5 to 60 min. At high temperatures (T ≥ 200°C), oxidation was found to be dominated by the oxide growth site formation (made up of silicon suboxides) and subsequent silicon oxide self-limitation. Si-Si backbond oxidation and Si-H surface bond propagation dominated the process at lower temperatures (T < 200°C).

Direct laser writing of μ-chips based on hybrid C–Au–Ag nanoparticles for express analysis of hazardous and biological substances

Micro-chips based on organic-inorganic hybrid nanoparticles (NPs) composed of nanoalloys of gold (Au) and silver (Ag) embedded in an amorphous carbonaceous matrix (C-Au-Ag NPs) were prepared directly on a substrate by the laser-induced deposition (for short: LID) method. The C-Au-Ag NPs show a unique plasmon resonance which enhances Raman scattering of analytes, making the μ-chips suitable to detect ultra-low-volumes (10(-12) liter) and concentrations (10(-9) M) of bio-agents and a hazardous compound. These micro-chips constitute a novel, flexible solid-state device that can be used for applications in point-of-care diagnostics, consumer electronics, homeland security and environmental monitoring.

Systematic Surface Phase Transition of Ag Thin Films by Iodine Functionalization at Room Temperature: Evolution of Optoelectronic and Texture Properties.

We show a simple room temperature surface functionalization approach using iodine vapour to control a surface phase transition from cubic silver (Ag) of thin films into wurtzite silver-iodid (β-AgI) films. A combination of surface characterization techniques (optical, electronical and structural characterization) reveal distinct physical properties of the new surface phase. We discuss the AgI thin film formation dynamics and related transformation of physical properties by determining the work-function, dielectric constant and pyroelectric behavior together with morphological and structural thin film properties such as layer thickness, grain structure and texture formation. Notable results are: (i) a remarkable increase of the work-function (by 0.9u2009eV) of the Ag thin layer after short a iodine exposure time (≤60u2009s), with simultaneous increase of the thin film transparency (by two orders of magnitude), (ii) pinning of the Fermi level at the valance band maximum upon iodine functionalization, (iii) 84% of all crystallites grain were aligned as a result of the evolution of an internal electric field. Realizing a nano-scale layer stack composed of a dielectric AgI layer on top of a metallic thin Ag layer with such a simple method has some technological implications e.g. to realize optical elements such as planar optical waveguides.

Functionalization of Silver Nanowires Surface using Ag-C Bonds in a Sequential Reductive Method

Silver nanowires (Ag-NW) assembled in interdigitated webs have shown an applicative potential as transparent and conducting electrodes. However, upon integration in practical device designs, the presence of silver oxide, which instantaneously forms on the Ag-NW surfaces in ambient conditions, is unwanted. Here, we report on the functionalization of Ag-NWs with 4-nitrophenyl moieties through A-C bonds using a versatile two step reduction process, i.e., ascorbate reduction combined electrografting. We show that 40% of the Ag atop sites were terminated and provide high surface stability toward oxidation for more than 2 months while keeping the same intrinsic conductivity as in bulk silver.