Mulpuri V. Rao

Al and B ion‐implantations in 6H‐ and 3C‐SiC

Low (keV) and high (MeV) energy Al and B implants were performed into n‐type 6H‐ and 3C‐SiC at both room temperature and 850 °C. The material was annealed at 1100, 1200, or 1400 °C for 10 min and characterized by secondary ion mass spectrometry, Rutherford backscattering (RBS), photoluminescence, Hall and capacitance‐voltage measurement techniques. For both Al and B implants, the implant species was gettered at 0.7 Rp (where Rp is the projected range) in samples implanted at 850 °C and annealed at 1400 °C. In the samples that were amorphized by the room temperature implantation, a distinct damage peak remained in the RBS spectrum even after 1400 °C annealing. For the samples implanted at 850 °C, which were not amorphized, the damage peak disappeared after 1400 °C annealing. P‐type conduction is observed only in samples implanted by Al at 850 °C and annealed at 1400 °C in Ar, with 1% dopant electrical activation.

Microwave dielectric heating of fluids in an integrated microfluidic device

The ability to selectively and precisely control the temperature of fluid volumes ranging from a few microliters to sub-nanoliters in microfluidic networks is vital for a wide range of applications in micro total analysis systems (μTAS). In this work, we characterize and model the performance of a thin film microwave transmission line integrated with a microfluidic channel to heat fluids with relevant buffer salt concentrations over a wide range of frequencies. A microchannel fabricated in poly(dimethylsiloxane) (PDMS) is aligned with a thin film microwave transmission line in a coplanar waveguide (CPW) configuration. The electromagnetic fields localized in the gap between the signal and ground lines of the transmission line dielectrically heat the fluid in the selected region of the microchannel. Microwave S-parameter measurements and optical fluorescence-based temperature measurements are used with a theoretical model developed based on classical microwave absorption theory to fully characterize the temperature rise of the fluid. We observe a 0.95 °C mW−1 temperature rise at 15 GHz and confirm that the temperature rise of the fluid is predominantly due to microwave dielectric heating.

Phosphorus and boron implantation in 6H–SiC

Phosphorus and boron ion implantations were performed at various energies in the 50 keV–4 MeV range. Range statistics of P+ and B+ were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature range of 1400–1700 °C using either a conventional resistive heating ceramic processing furnace or a microwave annealing station. The P implant was found to be stable at any annealing temperature investigated, but the B redistributed during the annealing process. The implant damage is effectively annealed as indicated by Rutherford backscattering measurements. For the 250 keV/1.2×1015 cm−2 P implant, annealed at 1600 °C for 15 min, the measured donor activation at room temperature is 34% with a sheet resistance of 4.8×102 Ω/□. The p-type conduction could not be measured for the B implants.

Ion-Implantation in Bulk Semi-Insulating 4H-SiC

Multiple energy N (at 500 °C) and Al (at 800 °C) ion implantations were performed into bulk semi-insulating 4H–SiC at various doses to obtain uniform implant concentrations in the range 1×1018–1×1020 cm−3 to a depth of 1.0 μm. Implant anneals were performed at 1400, 1500, and 1600 °C for 15 min. For both N and Al implants, the carrier concentration measured at room temperature for implant concentrations ⩽1019 cm−3 is limited by carrier ionization energies, whereas for the 1020 cm−3 implant, the carrier concentration is also limited by factors such as the solubility limit of the implanted nitrogen and residual implant damage. Lattice quality of the as-implanted and annealed material was evaluated by Rutherford backscattering spectroscopy measurements. Residual lattice damage was observed in the implanted material even after high temperature annealing. Atomic force microscopy revealed increasing deterioration in surface morphology (due to the evaporation of Si containing species) with increasing annealing t...

High-energy (MeV) ion implantation and its device applications in GaAs and InP

The work performed to date on the implantation of megaelectronvolt (MeV) energy ions of shallow donor (Si, S), shallow acceptor (Be), compensation (B, O, N, Fe, Co, Ti), and rare-earth (Er) species in III-V GaAs and InP compounds is reviewed. The optimum annealing conditions, the resulting carrier concentrations, and the lattice quality of the material are discussed. For the buried implants, the lattice damage and the electrical properties of the material are almost independent of the implant energy. For MeV Be/sup +/ implants the outdiffusion of Be during annealing is not observed, unlike in the case of shallow keV Be/sup +/ implants. The MeV energy Fe/sup +/ or Co/sup +/ implants performed at 200 degrees C into n-type InP, and Ti implants into p-type InP gave thermally stable buried high-resistance layers. The performance of microwave devices like vertical p-i-n, varactor, and mixer diodes and an optical device like a heterostructure laser made using MeV energy ion implantation is discussed. The results of MeV implantation in obtaining interdevice isolation of multilayer structures like HBTs are also discussed. >

PN junction formation in 6HSiC by acceptor implantation into n-type substrate

Abstract A1 and B implantations were performed into n-type 6H-bulk SiC and epitaxial layers at both room temperature and 850°C. Annealings were performed in the temperature range of 1100–1650°C in a SiC crucible. For single-energy implants, the implant gettered to the 0.7Rp location for annealing temperatures ≥1400°C. For the 850°C implanted samples the RBS yield in the annealed material is comparable to the yield in the as-grown material, indicating a good lattice recovery. A maximum activation of 18% for Al-implanted samples was observed. PN junction diodes were made using Al-implanted material.

Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants

Nanowire-nanocluster hybrid chemical sensors were realized by functionalizing gallium nitride (GaN) nanowires (NWs) with titanium dioxide (TiO(2)) nanoclusters for selectively sensing benzene and other related aromatic compounds. Hybrid sensor devices were developed by fabricating two-terminal devices using individual GaN NWs followed by the deposition of TiO(2) nanoclusters using RF magnetron sputtering. The sensor fabrication process employed standard microfabrication techniques. X-ray diffraction and high-resolution analytical transmission electron microscopy using energy-dispersive x-ray and electron energy-loss spectroscopies confirmed the presence of the anatase phase in TiO(2) clusters after post-deposition anneal at 700 °C. A change of current was observed for these hybrid sensors when exposed to the vapors of aromatic compounds (benzene, toluene, ethylbenzene, xylene and chlorobenzene mixed with air) under UV excitation, while they had no response to non-aromatic organic compounds such as methanol, ethanol, isopropanol, chloroform, acetone and 1,3-hexadiene. The sensitivity range for the noted aromatic compounds except chlorobenzene were from 1% down to 50 parts per billion (ppb) at room temperature. By combining the enhanced catalytic properties of the TiO(2) nanoclusters with the sensitive transduction capability of the nanowires, an ultra-sensitive and selective chemical sensing architecture is demonstrated. We have proposed a mechanism that could qualitatively explain the observed sensing behavior.

Be+/P+, Be+/Ar+, and Be+/N+ coimplantations into InP:Fe

Single‐ and multiple‐energy Be+/P+, Be+/Ar+, and Be+/N+ coimplantations were performed into semi‐insulating InP:Fe. Significantly higher Be dopant activations were obtained for Be+/P+ and Be+/Ar+ coimplantations compared to Be+ implantation. Sharp hole‐concentration depth profiles were obtained for Be+/P+ and Be+/Ar+ coimplantations in contrast to the deep diffusion fronts for Be+ implantation. A high degree of crystalline lattice damage in coimplanted material is believed to be responsible for the improved electrical characteristics of the material. A poor Be dopant electrical activation was observed for Be+/N+ coimplantation.

Material and n-p junction properties of N-, P-, and N/P-implanted SiC

Elevated temperature (ET) multiple energy N, P, and N/P implantations were performed into p-type 6H-SiC epitaxial layers. For comparison, room temperature (RT) N and P implantations were also performed. In the N/P coimplanted material a sheet resistance of 2.1×102 Ω/□ was measured, which is lower compared to the values measured in N or P implanted material of the same net donor dose. The RT P implantation resulted in heavy lattice damage and consequently low P electrical activation, even after 1600 °C annealing. After annealing the Rutherford backscattering yield either coincided or came close to the virgin level for ET implantations and RT N implantation, whereas for RT P implantation the yield was high, indicating the presence of high residual damage. Vertical n-p junction diodes were made by selective area ET N, P, and N/P implantations and RT N and P implantations using a 2.5 μm thick SiO2 layer as an implant mask. The diodes were characterized by capacitance–voltage and variable temperature current–v...

Al, Al/C and Al/Si implantations in 6H-SiC

Multiple-energy Al implantations were performed with and without C or Si coimplantations into 6H-SiC epitaxial layers and bulk substrates at 850°C. The C and Si co-implantations were used as an attempt to improve Al acceptor activation in SiC. The implanted material was annealed at 1500, 1600, and 1650°C for 45 min. The Al implants are thermally stable at all annealing temperatures and Rutherford backscattering via channeling spectra indicated good lattice quality in the annealed Al-implanted material. A net hole concentration of 8 × 1018 cm−3 was measured at room temperature in the layers implanted with Al and annealed at 1600°C. The C or Si co-implantations did not yield improvement in Al acceptor activation. The co-implants resulted in a relatively poor crystal quality due to more lattice damage compared to Al implantation alone. The out-diffusion of Al at the surface is more for 5Si co-implantation compared to Al implant alone, where 5Si means a Si/Al dose ratio of 5.