Myriam Willegems

Highly reliable CMOS-integrated 11MPixel SiGe-based micro-mirror arrays for high-end industrial applications

In this paper we report for the first time on the fabrication of very reliable CMOS-integrated 10 cm2 11 MPixel SiGe-based micro-mirror arrays on top of 6 level metal CMOS wafers. The array, which is to be used as Spatial Light Modulator (SLM) for optical maskless lithography [1,2,3] consists of 8 mum x 8 mum pixels which can be individually addressed by an analog voltage to enable accurate tilt angle modulation. The pixel density is almost double compared to the state-of-the-art [4]. A stable average cupping below 7 nm, an RMS roughness below 1 nm and long lifetime (>1012 cycles, no creep [5]) are demonstrated.

CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device

A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3×10−10 Nm/rad. Sharp tips are formed in a low-temperature amorphous silicon layer by isotropic plasma etching. An electrical read/write system is formed by connecting the tip to the CMOS with a suspended platinum trace, running on top of the cantilever.

15.2 A flexible ISO14443-A compliant 7.5mW 128b metal-oxide NFC barcode tag with direct clock division circuit from 13.56MHz carrier

Flexible low-cost RFID/NFC tags have great potential to be embedded in everyday objects providing them a unique identifier or sensor readout facilitating the Internet-of-Everything, whereby a smartphone or tablet is the interface to the Internet-of-Things. The main challenge for flexible metal-oxide RFID tags is to fully comply with the ISO14443-A NFC standard to enable readout by standard NFC reader or handheld devices, due to the limited charge carrier mobility of the semiconductor and multiple sources of parameter variation caused by roughness, temperature and dimensional stability of the foils. Recent work by various groups [1–4] demonstrated only an incremental improvement in data rates from 50b/s to 396.5kb/s to be compatible with ISO14443 (105.9kb/s). In this work, we present a flexible metal-oxide NFC chip that is compliant with ISO14443-A, showcasing advancements on memory size, power consumption and a clock generation circuit.

An active artificial iris controlled by a 25-μW flexible thin-film driver

We show an active artificial iris based on solely thin-film components, wherein several LCD elements are controlled a metal-oxide TFT and by powered by thin-film photovoltaics (TFPV). Key aspects for the driver are size and low power consumption. We demonstrate power consumption down to 25μW for the full iris.

Organic Imager on Readout Backplane Based on TFTs With Cross-Linkable Dielectrics

We report on the fabrication of imagers based on organic semiconductors both in the photodiode layer and in the readout backplane. The photodiode is based on evaporated ultrathin (<;100 nm) stack of SubPc/C60, sensitive in the wavelength range between 300 and 650 nm. The readout circuit is a switch matrix fabricated with a solution processed semiconductor (XPRD30B01) and two solution processed, crosslinkable dielectrics (XDRD30B01). The readout TFTs (140/5-μm channel width/length, respectively) have leakage current lower than 1 pA with the ON-current higher than 0.1 μA. The 32 × 32 pixel imagers with pixel pitch down to 200 μm are demonstrated with mean dark signal of a few μA/cm2 and linear photoresponse up to the incident power of 100 μW. These results show feasibility of fabricating readout circuits with TFTs based on crosslinkable dielectrics. This enables reduction of two patterning steps (opening of the gate dielectric and of the encapsulation layer) to just photolithography, leading to simplification of the backplane manufacturing process.