N. Čukarić

Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling.

The electronic structure of GaAs, InAs and InSb nanowires is studied using the six-band and the eight-band k·p models. The effect of the different Luttinger-like parameters (in the eight-band model) on the hole band structure is investigated. Although GaAs nanostructures are often treated within a six-band model because of the large bandgap, it is shown that an eight-band model is necessary for a correct description of its hole spectrum. The camel-back structure usually found in the six-band model is not always present in the eight-band model. This camel-back structure depends on the interaction between light and heavy holes, especially the ones with opposite spin. The latter effect is less pronounced in an eight-band model, but could be very sensitive to the Kane inter-band energy (E(P)) value.

Exciton states in a nanocup in the presence of a perpendicular magnetic field

The exciton states in a strained (In,Ga)As/GaAs nanocup are theoretically determined. We explore how the nanocup bottom thickness (t) affects the magnetic field dependence of the exciton energy. Strain distribution is computed by the continuum mechanical model under the approximation of isotropic elasticity. The exciton wave functions are expanded into products of the electron and hole envelope functions. For small t, the exciton ground state has zero orbital momentum and exhibits small oscillations of the second derivative when the magnetic field increases. When t approaches the value of the cup height, however, the exciton levels exhibit angular momentum transitions, whose behavior is similar to that for type-II quantum dots. Small oscillations of the oscillator strength for exciton recombination are found when the magnetic field increases. An increase in thickness of the nanocup bottom has only a small effect on those oscillations for the optically active exciton states, but the exciton ground state becomes dark when the magnetic field increases. Hence, the results of our calculations show that an increase in thickness of the nanocup bottom transforms the exciton ground energy level dependence on magnetic field from the one characteristic of type-I rings to the one characteristic of type-II dots.

An efficient finite-difference scheme for computation of electron states in free-standing and core-shell quantum wires

The electron states in axially symmetric quantum wires are computed by means of the effective-mass Schrodinger equation, which is written in cylindrical coordinates φ, ρ, and z. We show that a direct discretization of the Schrodinger equation by central finite differences leads to a non-symmetric Hamiltonian matrix. Because diagonalization of such matrices is more complex it is advantageous to transform it in a symmetric form. This can be done by the Liouville-like transformation proposed by Rizea et al. (2008), which replaces the wave function ψ(ρ) with the function F(ρ)=ψ(ρ)ρ and transforms the Hamiltonian accordingly. Even though a symmetric Hamiltonian matrix is produced by this procedure, the computed wave functions are found to be inaccurate near the origin, and the accuracy of the energy levels is not very high. In order to improve on this, we devised a finite-difference scheme which discretizes the Schrodinger equation in the first step, and then applies the Liouville-like transformation to the difference equation. Such a procedure gives a symmetric Hamiltonian matrix, resulting in an accuracy comparable to the one obtained with the finite element method. The superior efficiency of the new finite-difference scheme (FDM) is demonstrated for a few ρ-dependent one-dimensional potentials which are usually employed to model the electron states in free-standing and core–shell quantum wires. The new scheme is compared with the other FDM schemes for solving the effective-mass Schrodinger equation, and is found to deliver energy levels with much smaller numerical error for all the analyzed potentials. It also gives more accurate results than the scheme of Rizea et al., except for the ground state of an infinite rectangular potential in freestanding quantum wires. Moreover, the PT symmetry is invoked to explain similarities and differences between the considered FDM schemes.

Normal and skewed phosphorene nanoribbons in combined magnetic and electric fields

The energy spectrum and eigenstates of single-layer black phosphorous nanoribbons in the presence of perpendicular magnetic field and in-plane transverse electric field are investigated by means of a tight-binding method and the effect of different types of edges is analytically examined. A description based on a new continuous model is proposed by expansion of the tight-binding model in the long-wavelength approximation. The wavefunctions corresponding to the flatband part of the spectrum are obtained analytically and are shown to approach agree well with the numerical results from the tight-binding method. Analytical expressions for the critical magnetic field at which Landau levels are formed and the ranges of wavenumbers in the dispersionless flat-band segments in the energy spectra are derived. We examine the evolution of the Landau levels when an in-plane lateral electric field is applied and determine analytically how the edge states shift with magnetic field.The energy spectrum and eigenstates of single-layer black phosphorous nanoribbons in the presence of perpendicular magnetic field and in-plane transverse electric field are investigated by means of a tight-binding method and the effect of different types of edges is analytically examined. A description based on a new continuous model is proposed by expansion of the tight-binding model in the long-wavelength approximation. The wavefunctions corresponding to the flatband part of the spectrum are obtained analytically and are shown to approach agree well with the numerical results from the tight-binding method. Analytical expressions for the critical magnetic field at which Landau levels are formed and the ranges of wavenumbers in the dispersionless flat-band segments in the energy spectra are derived. We examine the evolution of the Landau levels when an in-plane lateral electric field is applied and determine analytically how the edge states shift with magnetic field.

On Improving Accuracy of Finite-Element Solutions of the Effective-Mass Schrödinger Equation for Interdiffused Quantum Wells and Quantum Wires*

We use the Galerkin approach and the finite-element method to numerically solve the effective-mass Schrodinger equation. The accuracy of the solution is explored as it varies with the range of the numerical domain. The model potentials are those of interdiffused semiconductor quantum wells and axially symmetric quantum wires. Also, the model of a linear harmonic oscillator is considered for comparison reasons. It is demonstrated that the absolute error of the electron ground state energy level exhibits a minimum at a certain domain range, which is thus considered to be optimal. This range is found to depend on the number of mesh nodes N approximately as α0 logeα1(α2N), where the values of the constants α0, α1, and α2 are determined by fitting the numerical data. And the optimal range is found to be a weak function of the diffusion length. Moreover, it was demonstrated that a domain range adaptation to the optimal value leads to substantial improvement of accuracy of the solution of the Schrodinger equation.

The interband optical absorption in silicon quantum wells: Application of the 30-band k ⋅ p model

The interband optical absorption in Si/SiO2 quantum wells is calculated as function of the well width (W) and the evolution from an indirect to a direct gap material as function of the well width is investigated. In order to compute the electron states in the conduction band, the 30-band k ⋅ p model is employed, whereas the 6-band Luttinger-Kohn model is used for the hole states. We found that the effective direct band gap in the quantum well agrees very well with the W–2 scaling result of the single-band model. The interband matrix elements for linear polarized light oscillate with the quantum well width, which agrees qualitatively with a single band calculation. Our theoretical results indicate that the absorption can be maximized by a proper choice of the well width. However, the obtained absorption coefficients are at least an order of magnitude smaller than for a typical direct semiconductor even for a well width of 2 nm.