Nabhan Khatib

High-Precision Differential-Input Buffered and External Transconductance Amplifier for Low-Voltage Low-Power Applications

Recently, the demand for low-voltage low-power integrated circuits design has grown dramatically. For battery-operated devices both the supply voltage and the power consumption have to be lowered in order to prolong the battery life. This paper presents an attractive approach to designing a low-voltage low-power high-precision differential-input buffered and external transconductance amplifier, DBeTA, based on the bulk-driven technique. The proposed DBeTA possesses rail-to-rail voltage swing capability at a low supply voltage of ±400 mV and consumes merely 62 μW. The proposed circuit is a universal active element that offers more freedom during the design of current-, voltage-, or mixed-mode applications. The proposed circuit is particularly interesting for biomedical applications requiring low-voltage low-power operation capability where the processing signal frequency is limited to a few kilohertz. An oscillator circuit employing a minimum number of active and passive components has been described in this paper as one of many possible applications. The circuit contains only a single active element DBeTA, two capacitors, and one resistor, which is very attractive for integrated circuit implementation. PSpice simulation results using the 0.18 μm CMOS technology from TSMC are included to prove the unique results.

Utilizing the Bulk-driven technique in analog circuit design

The last few decades, a great deal of attention has been paid to low-voltage (LV) low-power (LP) integrated circuits design since the power consumption has become a critical issue. Among many techniques used for the design of LV LP analog circuits, the Bulk-driven principle offers a promising route towards this design for many aspects mainly the simplicity and using the conventional MOS technology to implement these designs. This paper is devoted to the Bulk-driven (BD) principle and utilizing this principle to design LV LP building blocks of Current Mirror (CM), Enhanced Current Mirror (ECM), Operational Transconductance Amplifier (OTA), Current Conveyor (CCII) and Current Differencing Transconductance Amplifier (CDTA) in standard CMOS processes and supply voltage ±0.7 V. The simulation results have been carried out by the Spice simulator using the 0.25 μ CMOS technology from TSMC.

ULTRA-LOW VOLTAGE TUNABLE TRANSCONDUCTOR BASED ON BULK-DRIVEN QUASI-FLOATING-GATE TECHNIQUE ¤

This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-°oating- gate technique (BD-QFG). This technique leads to signicant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of � 300mV and low power consumption of 18 � W. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second-order Gm-C multifunctionlter is presented as one of the possible applications. The simulation results using 0.18 � m CMOS N-Well process from TSMC show the attractive features of the proposed circuit.

New bulk-driven class AB CCII

Bulk-driven technique has been verified to be a promising candidate in the area of low-voltage low-power techniques. In this paper, class AB current conveyor utilizing bulk-driven technique has been proposed. The proposed circuit was implemented based on CMOS technology to put a step forward in the field of low-voltage low-power applications; the non-ideal model of current conveyor has been explained. The circuit has been simulated at ±0.4 V supply voltage and total power dissipation 27.8 μW. The simulation results have been included to prove the theoretical consideration.