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Dive into the research topics where Naohiro Nishikawa is active.

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Featured researches published by Naohiro Nishikawa.


Japanese Journal of Applied Physics | 1995

Enhanced Critical Current in Tl-Ba-Ca-Cu-O Superconductors Prepared by Diffusion Process with Fluorine Addition

Akihiro Kikuchi; Takashi Kinoshita; Naohiro Nishikawa; Seiki Komiya; Kyoji Tachikawa

In the Tl-Ba-Ca-Cu-O (TBCCO) diffusion composites, critical current (I c) at 77 K is significantly improved by fluorine (F) addition to the coating layer. The F addition decreases the degradation of I c under magnetic field at 77 K, and shifts the irreversibility lines to higher temperatures. The X-ray diffraction study reveals that F addition promotes the phase transformation from 2223 to 1223. Meanwhile, annealing in flowing O2 at 550° C-600° C also increases I c at 77 K. O2 annealing seems to improve the weak links between superconducting grains. The largest transport critical current density (J c) of the specimen with F addition and O2 annealing exceeds 10000 A/cm2 at 77 K. In the present TBCCO diffusion composites with F addition, the effect of phase transformation on I c performance has been clearly observed.


Archive | 2008

Epitaxial substrate for field effect transistor

Masahiko Hata; Hiroyuki Sazawa; Naohiro Nishikawa


Archive | 2005

Semiconductor light emitting element, method for manufacturing substrate therefor, and method for manufacturing the same

Kenji Kasahara; Naohiro Nishikawa; Yoshihiko Tsuchida; Kazumasa Ueda; 和正 上田; 良彦 土田; 健司 笠原; 直宏 西川


Archive | 2006

Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element

Kazumasa Hiramatsu; Hideto Miyake; Yoshihiko Tsuchida; Yoshinobu Ono; Naohiro Nishikawa


Archive | 2007

Method for manufacturing group 3-5 nitride semiconductor substrate

Kazumasa Ueda; Naohiro Nishikawa; Kenji Kasahara


Archive | 2007

Method For Producing Group III-V Nitride Semiconductor Substrate

Kazumasa Ueda; Naohiro Nishikawa; Kenji Kasahara


Archive | 2005

MANUFACTURING METHOD OF GROUP 3-5 NITRIDE SEMICONDUCTOR LAMINATED SUBSTRATE, AND GROUP 3-5 NITRIDE SEMICONDUCTOR INDEPENDENCE SUBSTRATE, AND SEMICONDUCTOR ELEMENT

Kazumasa Hiramatsu; Hideto Miyake; Naohiro Nishikawa; Yoshinobu Ono; Yoshihiko Tsuchida; 秀人 三宅; 良彦 土田; 善伸 小野; 和政 平松; 直宏 西川


Archive | 2006

Sustrate and Semiconductor Light-Emitting Device

Naohiro Nishikawa; Kazumasa Ueda; Kenji Kasahara; Yoshihiko Tsuchida


Archive | 2007

Method for manufacturing semiconductor epitaxial crystal substrate

Hiroyuki Sazawa; Naohiro Nishikawa; Masahiko Hata


Archive | 2006

Substrate and semiconductor light emitting element

Naohiro Nishikawa; Kazumasa Ueda; Kenji Kasahara; Yoshihiko Tsuchida

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Akihiro Kikuchi

National Institute for Materials Science

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