Naoki Arai
Tokai University
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Publication
Featured researches published by Naoki Arai.
Applied Physics Express | 2008
Takayoshi Oshima; Takeya Okuno; Naoki Arai; Norihito Suzuki; Shigeo Ohira; Shizuo Fujita
A vertical-type Schottky photodetector based on a (100)-oriented β-Ga2O3 substrate has been fabricated with simple processes of thermal annealing and vacuum evaporation. The photodetector exhibited a rectification ratio higher than 106 at ±3 V, and showed deep-ultraviolet-light detection at reverse bias. The spectral response showed solar-blind sensitivity with high photoresponsivities of 2.6–8.7 A/W at wavelengths of 200–260 nm. These values were 35–150 times higher than those derived assuming the internal quantum efficiency to be unity. This fact is attributed to the carrier multiplication occurring in the highly resistive surface region that is subject to a high internal electric field of about 1.0 MV/cm at the reverse bias of 10 V.
Japanese Journal of Applied Physics | 2009
Takayoshi Oshima; Takeya Okuno; Naoki Arai; Norihito Suzuki; Harumichi Hino; Shizuo Fujita
An oxide semiconductor of β-Ga2O3 has a natural solar-blind sensitivity due to its large bandgap of 4.8 eV. To evaluate its potential, a flame detector was fabricated using its conductive single crystal substrate applying a simple method without epitaxy and vacuum processes. The structure is a poly(3,4-ethylene dioxythiophene) complex with polystyrene sulfonic acid (PEDOT–PSS) Schottky contact/a semi-insulating layer of β-Ga2O3/n-type region of β-Ga2O3/an In ohmic contact. The spectral response of the detector exhibited a large 250-to-300-nm rejection ratio of 1.5 ×104 and an external quantum efficiency of 18% at 250 nm. The device successfully detected a flame by distinguishing 1.5 nW/cm2 solar-blind light from the flame under a strong fluorescent lamp illumination without any visible-cut filters. This result encourages the fabrication of practical β-Ga2O3-based flame detectors.
Japanese Journal of Applied Physics | 2009
Takayoshi Oshima; Takeya Okuno; Naoki Arai; Yasushi Kobayashi; Shizuo Fujita
β-Al2xGa2-2xO3 alloy thin films were successfully grown on (100)-oriented β-Ga2O3 single-crystal substrates by plasma-assisted molecular beam epitaxy. The films were grown almost coherently and maintained the β-phase up to an Al content of x=0.61. Below an Al content of about x=0.4, step-flow growth was achieved, and carrier accumulation was observed at the heterointerface. These results encourage further research into β-Al2xGa2-2xO3 thin films and associated devices, especially high-electron-mobility transistors for high-power applications.
Japanese Journal of Applied Physics | 2009
Takayoshi Oshima; Takeya Okuno; Naoki Arai; Yasushi Kobayashi; Shizuo Fujita
Wet etching of (100)-oriented β-Ga2O3 single crystal substrates was carried out using H3PO4 and H2SO4. The etching reactions followed the Arrhenius equation, but the etching in H2SO4 at a high temperature of 190 °C was disturbed by the formation of sulfates on the surface. Considering the higher etching rate over the temperature range of 100–194 °C, H3PO4 is more preferable as an etchant for β-Ga2O3. Although the isotropic etching led to side etching, a grid pattern in the order of µm was successfully fabricated. These results indicate that this simple and low-cost wet etching using H3PO4 is suitable for isolating devices or patterning structures on β-Ga2O3 substrates.
Thin Solid Films | 2008
Takayoshi Oshima; Naoki Arai; Norihito Suzuki; Shigeo Ohira; Shizuo Fujita
Thin Solid Films | 2008
Shigeo Ohira; Norihito Suzuki; Naoki Arai; Masahiko Tanaka; Takamasa Sugawara; Kazuo Nakajima; Toetsu Shishido
Physica Status Solidi (c) | 2008
Shigeo Ohira; Naoki Arai
Japanese Journal of Applied Physics | 1992
Masahiro Deguchi; Makoto Kitabatake; Takashi Hirao; Naoki Arai; Tomio Izumi
Applied Surface Science | 2008
Shigeo Ohira; Naoki Arai; Takayoshi Oshima; Shizuo Fujita
Japanese Journal of Applied Physics | 2009
Takayoshi Oshima; Takeya Okuno; Naoki Arai; Yasushi Kobayashi; Shizuo Fujita