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Featured researches published by Shigeo Ohira.


Applied Physics Express | 2008

Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates

Takayoshi Oshima; Takeya Okuno; Naoki Arai; Norihito Suzuki; Shigeo Ohira; Shizuo Fujita

A vertical-type Schottky photodetector based on a (100)-oriented β-Ga2O3 substrate has been fabricated with simple processes of thermal annealing and vacuum evaporation. The photodetector exhibited a rectification ratio higher than 106 at ±3 V, and showed deep-ultraviolet-light detection at reverse bias. The spectral response showed solar-blind sensitivity with high photoresponsivities of 2.6–8.7 A/W at wavelengths of 200–260 nm. These values were 35–150 times higher than those derived assuming the internal quantum efficiency to be unity. This fact is attributed to the carrier multiplication occurring in the highly resistive surface region that is subject to a high internal electric field of about 1.0 MV/cm at the reverse bias of 10 V.


Physica Status Solidi (c) | 2007

Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal

N. Suzuki; Shigeo Ohira; Miyoko Tanaka; Takamasa Sugawara; Kazuo Nakajima; T. Shishido


Thin Solid Films | 2008

Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy

Takayoshi Oshima; Naoki Arai; Norihito Suzuki; Shigeo Ohira; Shizuo Fujita


Thin Solid Films | 2008

Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing

Shigeo Ohira; Norihito Suzuki; Naoki Arai; Masahiko Tanaka; Takamasa Sugawara; Kazuo Nakajima; Toetsu Shishido


Thin Solid Films | 2006

Fabrication of hexagonal GaN on the surface of β-Ga2O3 single crystal by nitridation with NH3

Shigeo Ohira; Masayuki Yoshioka; Takamasa Sugawara; Kazuo Nakajima; Toetsu Shishido


Physica Status Solidi (c) | 2008

Wet chemical etching behavior of β-Ga2O3 single crystal

Shigeo Ohira; Naoki Arai


Physica Status Solidi (c) | 2007

Growth of hexagonal GaN films on the nitridated β‐Ga2O3 substrates using RF‐MBE

Shigeo Ohira; Noriji Suzuki; H. Minami; K. Takahashi; Tsutomu Araki; Yasushi Nanishi


Journal of Alloys and Compounds | 2005

Synthesis and structural investigation of β-Ga2O3 nanosheets and nanobelts

Shigeo Ohira; Takamasa Sugawara; Kazuo Nakajima; Toetsu Shishido


Archive | 2007

HIGHLY FUNCTIONAL Ga2O3 SINGLE CRYSTAL FILM AND METHOD FOR PRODUCING THE SAME

Naoki Arai; Shizuo Fujita; Shigeo Ohira; Takahito Oshima; 孝仁 大島; 重男 大平; 直樹 新井; 静雄 藤田


Applied Surface Science | 2008

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

Shigeo Ohira; Naoki Arai; Takayoshi Oshima; Shizuo Fujita

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Naoki Arai

Nagaoka University of Technology

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Norihito Suzuki

Osaka Electro-Communication University

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