Naoki Nakazawa

High Efficiency Quantum Dot Sensitized Solar Cells Based on Direct Adsorption of Quantum Dots on Photoanodes

Unambiguously direct adsorption (DA) of initial oil-soluble quantum dots (QDs) on TiO2 film electrode is a convenient and simple approach in the construction of quantum dot sensitized solar cells (QDSCs). Regrettably, low QD loading amount and poor reproducibility shadow the advantages of DA route and constrain its practical application. Herein, the influence of experimental variables in DA process on QD loading amount as well as on the photovoltaic performance of the resultant QDSCs was investigated and optimized systematically, including the choice of solvent, purification of QDs, and sensitization time, as well as QD concentration. Experimental results demonstrated that it is essential to choose appropriate solvent as well as control purification cycles of original QD suspensions so as to realize satisfactory QD loading amount and ensure the high reproducibility. In addition, DA mode renders efficient electron injection from QD to TiO2, yet low QD loading amount and adverse QD agglomeration in comparison with the well-developed capping ligand induced self-assembly (CLIS) deposition approach. Mg2+ treatment on TiO2 photoanodes can promote the QD loading amount in DA mode. The optimized QDSCs based on DA mode exhibited efficiencies of 6.90% and 9.02% for CdSe and Zn-Cu-In-Se QDSCs, respectively, which were comparable to the best results based on CLIS mode (6.88% and 9.56%, respectively).

Slow hot carrier cooling in cesium lead iodide perovskites

Lead halide perovskites are attracting a great deal of interest for optoelectronic applications such as solar cells, LEDs, and lasers because of their unique properties. In solar cells, heat dissipation by hot carriers results in a major energy loss channel responsible for the Shockley–Queisser efficiency limit. Hot carrier solar cells offer the possibility to overcome this limit and achieve energy conversion efficiency as high as 66% by extracting hot carriers. Therefore, fundamental studies on hot carrier relaxation dynamics in lead halide perovskites are important. Here, we elucidated the hot carrier cooling dynamics in all-inorganic cesium lead iodide (CsPbI3) perovskite using transient absorption spectroscopy. We observe that the hot carrier cooling rate in CsPbI3 decreases as the fluence of the pump light increases and the cooling is as slow as a few 10 ps when the photoexcited carrier density is 7 × 1018 cm−3, which is attributed to phonon bottleneck for high photoexcited carrier densities. Our findings suggest that CsPbI3 has a potential for hot carrier solar cell applications.

Lead Selenide Colloidal Quantum Dot Solar Cells Achieving High Open-Circuit Voltage with One-Step Deposition Strategy

Lead selenide (PbSe) colloidal quantum dots (CQDs) are considered to be a strong candidate for high-efficiency colloidal quantum dot solar cells (CQDSCs) due to its efficient multiple exciton generation. However, currently, even the best PbSe CQDSCs can only display open-circuit voltage ( Voc) about 0.530 V. Here, we introduce a solution-phase ligand exchange method to prepare PbI2-capped PbSe (PbSe-PbI2) CQD inks, and for the first time, the absorber layer of PbSe CQDSCs was deposited in one step by using this PbSe-PbI2 CQD inks. One-step-deposited PbSe CQDs absorber layer exhibits fast charge transfer rate, reduced energy funneling, and low trap assisted recombination. The champion large-area (active area is 0.35 cm2) PbSe CQDSCs fabricated with one-step PbSe CQDs achieve a power conversion efficiency (PCE) of 6.0% and a Voc of 0.616 V, which is the highest Voc among PbSe CQDSCs reported to date.

Recombination Suppression in PbS Quantum Dot Heterojunction Solar Cells by Energy-Level Alignment in the Quantum Dot Active Layers

Using spatial energy-level gradient engineering with quantum dots (QDs) of different sizes to increase the generated carrier collection at the junction of a QD heterojunction solar cell (QDHSC) is a hopeful route for improving the energy-conversion efficiency. However, the results of current related research have shown that a variable band-gap structure in a QDHSC will create an appreciable increase, not in the illumination current density, but rather in the fill factor. In addition, there are a lack of studies on the mechanism of the effect of these graded structures on the photovoltaic performance of QDHSCs. This study presents the development of air atmosphere solution-processed TiO2/PbS QDs/Au QDHSCs by engineering the energy-level alignment (ELA) of the active layer via the use of a sorted order of differently sized QD layers (four QD sizes). In comparison to the ungraded device (without the ELA), the optimized graded architecture (containing the ELA) solar cells exhibited a great increase (21.4%) in short-circuit current density ( Jsc). As a result, a Jsc value greater than 30 mA/cm2 has been realized in planar, thinner absorption layer (∼300 nm) PbS QDHSCs, and the open-circuit voltage ( Voc) and power-conversion efficiency (PCE) were also improved. Through characterization by the light intensity dependences of the Jsc and Voc and transient photovoltage decay, we find that (i) the ELA structure, serving as an electron-blocking layer, reduces the interfacial recombination at the PbS/anode interface, and (ii) the ELA structure can drive more carriers toward the desirable collection electrode, and the additional carriers can fill the trap states, reducing the trap-assisted recombination in the PbS QDHSCs. This work has clearly elucidated the mechanism of the recombination suppression in the graded QDHSCs and demonstrated the effects of ELA structure on the improvement of Jsc. The charge recombination mechanisms characterized in this work would be able to shed light on further improvements of QDHSCs, which could even benefit other types of solar cells.

Interface Passivation Effects on the Photovoltaic Performance of Quantum Dot Sensitized Inverse Opal TiO2 Solar Cells

Quantum dot (QD)-sensitized solar cells (QDSSCs) are expected to achieve higher energy conversion efficiency than traditional single-junction silicon solar cells due to the unique properties of QDs. An inverse opal (IO)-TiO2 (IO-TiO2) electrode is useful for QDSSCs because of its three-dimensional (3D) periodic nanostructures and better electrolyte penetration compared to the normal nanoparticles (NPs)-TiO2 (NPs-TiO2) electrode. We find that the open-circuit voltages Voc of the QDSSCs with IO-TiO2 electrodes are higher than those of QDSSCs with NPs-TiO2 electrodes. One important strategy for enhancing photovoltaic conversion efficiency of QDSSCs with IO-TiO2 electrodes is surface passivation of photoanodes using wide-bandgap semiconducting materials. In this study, we have proposed surface passivation on IO-TiO2 with ZnS coating before QD deposition. The efficiency of QDSSCs with IO-TiO2 electrodes is largely improved (from 0.74% to 1.33%) because of the enhancements of Voc (from 0.65 V to 0.74 V) and fill factor (FF) (from 0.37 to 0.63). This result indicates that ZnS passivation can reduce the interfacial recombination at the IO-TiO2/QDs and IO-TiO2/electrolyte interfaces, for which two possible explanations can be considered. One is the decrease of recombination at IO-TiO2/electrolyte interfaces, and the other one is the reduction of the back-electron injection from the TiO2 electrode to QDs. All of the above results are effective for improving the photovoltaic properties of QDSSCs.