Naoko Otani | Researchain

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Publication

Featured researches published by Naoko Otani.

Archive | 1996

Semiconductor device comprising trench EEPROM

Naoko Otani; Toshiharu Katayama

Archive | 1993

Semiconductor memory device and manufacturing method of the same

Katsuhiko Tamura; Yukari Imai; Naoko Otani

Archive | 1995

Non-volatile semiconductor information storage device

Naoko Otani; Toshiharu Katayama

Archive | 1995

Method of making semiconductor device with floating bate

Katsuhiko Tamura; Yukari Imai; Naoko Otani

Archive | 1996

Method of evaluating a thin film for use in semiconductor device

Yukari Imai; Toshiharu Katayama; Naoko Otani

Archive | 1996

Semiconductor memory device, e.g. EEPROM with trench formed in underlying layer

Naoko Otani; Toshiharu Katayama

Archive | 1996

Elektrochemisches Verfahren bei der Herstellung einer Halbleitervorrichtung An electrochemical process in the manufacture of a semiconductor device

Yukari Imai; Toshiharu Katayama; Naoko Otani

Archive | 1996

Nichtflüchtige Halbleiterspeichervorrichtung mit einem in einem Graben angeordneten Gateelektrodenabschnitt und deren Herstellungsverfahren

Naoko Otani; Toshiharu Katayama

Archive | 1996

Nichtflüchtige Halbleiterspeichervorrichtung mit einem in einem Graben angeordneten Gateelektrodenabschnitt und deren Herstellungsverfahren The nonvolatile semiconductor memory device having a disposed in a trench gate electrode section and their method of preparation

Naoko Otani; Toshiharu Katayama

Archive | 1996

The nonvolatile semiconductor memory device having a disposed in a trench gate electrode portion and the manufacturing method thereof

Naoko Otani; Toshiharu Katayama

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Toshiharu Katayama

Mitsubishi

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Yukari Imai

Mitsubishi

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Katsuhiko Tamura

Mitsubishi

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Archive Network Publication Hotspot Collaboration

Network

Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot

Dive into the research topics where Naoko Otani is active.

Publication

Featured researches published by Naoko Otani.

Semiconductor device comprising trench EEPROM

Semiconductor memory device and manufacturing method of the same

Non-volatile semiconductor information storage device

Method of making semiconductor device with floating bate

Method of evaluating a thin film for use in semiconductor device

Semiconductor memory device, e.g. EEPROM with trench formed in underlying layer

Elektrochemisches Verfahren bei der Herstellung einer Halbleitervorrichtung An electrochemical process in the manufacture of a semiconductor device

Nichtflüchtige Halbleiterspeichervorrichtung mit einem in einem Graben angeordneten Gateelektrodenabschnitt und deren Herstellungsverfahren

Nichtflüchtige Halbleiterspeichervorrichtung mit einem in einem Graben angeordneten Gateelektrodenabschnitt und deren Herstellungsverfahren The nonvolatile semiconductor memory device having a disposed in a trench gate electrode section and their method of preparation

The nonvolatile semiconductor memory device having a disposed in a trench gate electrode portion and the manufacturing method thereof

Collaboration

Dive into the Naoko Otani's collaboration.