Narayanan Vijay | Researchain

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Featured researches published by Narayanan Vijay.

Archive | 2011

SEMICONDUCTOR STRUCTURE CAPTURING IMPURITY OXYGEN FOR HIGH-K GATE DIELECTRIC, AND METHOD FOR FORMING THE STRUCTURE (CAPTURE METAL STACK FOR HIGH-K GATE DIELECTRIC)

Ando Takashi; Choi Changhwan; Narayanan Vijay; Frank Martin M

Archive | 2018

FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMANIUM CHANNEL FIELD EFFECT TRANSISTOR DEVICE

Ando Takashi; Hashemi Pouya; Jagannathan Hemanth; Lee Choonghyun; Narayanan Vijay

Archive | 2018

INTEGRATED METAL GATE CMOS DEVICES

Bao Ruqiang; Guo Dechao; Narayanan Vijay

Archive | 2018

FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION

Bao Ruqiang; Krishnan Siddarth A; Kwon Unoh; Narayanan Vijay

Archive | 2017

FERROELECTRIC GATE DIELECTRIC WITH SCALED INTERFACIAL LAYER FOR STEEP SUB-THRESHOLD SLOPE FIELD-EFFECT TRANSISTOR

Ando Takashi; Frank Martin M; Narayanan Vijay

Archive | 2017

PATTERNED GATE DIELECTRICS FOR III-V-BASED CMOS CIRCUITS

Ando Takashi; Frank Martin M; Mo Renee T; Narayanan Vijay; Rozen John

IEEE Electron Device Letters | 2017

その場O_3治療によるAl_2O_3/HfO_2スタックを用いた高移動度高Ge含有SiGe PMOSFET【Powered by NICT】

Ando Takashi; Hashemi Pouya; Bruley John; Rozen John; Ogawa Yohei; Koswatta Siyuranga; K Chan Kevin; A Cartier Eduard; Mo Renee; Narayanan Vijay

Archive | 2016

Transistor device and method of forming the same

Ando Takashi; Kannan Balaji; Narayanan Vijay

IEEE Conference Proceedings | 2016

接合改善と縮尺EOTを有する高Ge含有SiGe PMOS FinFETにおける記録SiGe相互コンダクタンスと短チャネル電流駆動の実証【Powered by NICT】

Hashemi Pouya; Kam-Leung Lee; Ando Takashi; Balakrishnan Karthik; A Ott John; Koswatta Syuranga; U Engelmann Sebastian; Dae-Gyu Park; Narayanan Vijay; T Mo Renee; Leobandung Effendi

IEEE Conference Proceedings | 2016

Si/SiGeチャネルCMOS FinFTT技術実行可能なDC性能要素【Powered by NICT】

Tsutsui Gen; Bao Ruqiang; Lim Kwan-Yong; R Robison Robert; A Vega Reinaldo; Yang Jie; Liu Zuoguang; Wang Miaomiao; Gluschenkov Oleg; Yeung Chun Wing; Watanabe Koji; Bentley Steven; Niimi Hiroaki; Liu Derrick; Zhou Huimei; Siddiqui Shariq; Kim Hoon; Galatage Rohit; Venigalla Rajasekhar; Raymond Mark; Adusumilli Praneet; Mochizuki Shogo; S Devarajan Thamarai; Miao Bruce; Liu Bei; Greene Andrew; Shearer Jeffrey; Montanini Pietro; W Strane Jay; Prindle Christopher

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