Nathaniel Gillgren

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional edge contacts. These transistors are stable in ambient conditions for >300 h, and display ambipolar behavior, a gate-dependent metal?insulator transition, and mobility up to 4000 cm2 V?1 s?1. At low temperatures, we observe gate-tunable Shubnikov de Haas magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor ?2. The cyclotron mass of few-layer phosphorene (FLP) holes is determined to increase from 0.25 to 0.31 me as the Fermi level moves towards the valence band edge. Our results underscore the potential of FLP as both a platform for novel 2D physics and an electronic material for semiconductor applications.

Surface transport and quantum Hall effect in ambipolar black phosphorus double quantum wells

Few-layer black phosphorus acts as tunable ambipolar wide quantum wells. Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional “which-layer” degree of freedom gives rise to celebrated phenomena, such as Coulomb drag, Hall drag, and exciton condensation. We demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to traditional QWs, each 2D layer is ambipolar and can be tuned into n-doped, p-doped, or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with an enhanced Landé g factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double, or wide QWs with unusual properties, such as high anisotropy.

Weak localization and electron–electron interactions in few layer black phosphorus devices

Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (~T-0.4). These results establish that the dominant scattering mechanism in FLP is electron-electron interactions.