Neetesh Singh

Fiber-drawn double split ring resonators in the terahertz range

We present a novel method for producing metamaterials based on double split ring resonators with a magnetic resonance at terahertz (THz) frequencies. The resonators were made by fiber drawing, a scalable method capable of producing large volumes of metamaterials, demonstrating that this technique can be extended to complex meta-atoms. The observed resonances occur at larger wavelengths relative to the resonator size, compared to single split ring resonators, and are in good agreement with simulations.

Silicon-on-sapphire pillar waveguides for Mid-IR supercontinuum generation

We propose pillar integrated silicon waveguides to exploit the entire transparent window of silicon. These geometries posses a broad and flat dispersion (from 2 to 6 μm) with four zero dispersion wavelengths. We calculate supercontinuum generation spanning over two octaves (2 to >8 μm) with long wavelengths interacting weakly with the lossy substrate. These structures have higher mode confinement in the silicon - away from the substrate, which makes them substrate independent and are promising for exploring new nonlinear phenomena and highly sensitive molecular sensing over the entire silicons transparency range.

Photoinduced axial quantization in chalcogenide microfiber resonators

We investigate axial quantization in chalcogenide (As2S3) whispering gallery mode microfiber resonators. A microcavity is fabricated using a positive photoinduced index perturbation in the microfiber, and the modes are excited through evanescent field coupling with a tapered silica fiber. We show that the modes of the unperturbed fiber split into ladders of modes due to the confinement along the axial direction of the fiber. The axial quantization of the modes is reproduced with a combination of numerical models. Due to the high nonlinearity and photosensitive properties of chalcogenide glasses, microcavities in these materials offer unique potential in nonlinear optics and sensing applications.

Positive and negative phototunability of chalcogenide (AMTIR-1) microdisk resonator

We demonstrate externally photo-induced partially-reversible tuning of the resonance of a microdisk made of AMTIR-1 (Ge(33)As(12)Se(55)). We have achieved for the first time, to the best of our knowledge, both positive and negative shift in a microresonator with external tuning. A positive resonance shift of 1 nm and a negative resonance shift of 0.5 nm on a single microdisk has been measured. We have found that this phenomenon is due to initial photo-expansion of the microdisk followed by the photo-bleaching of the AMTIR-1. The observed shifts and the underlying phenomenon is controllable by varying the illumination power (i.e. the low power illumination suppresses the photobleaching process). We measure a loaded quality factor of 1.2x10(5) at 1550nm (limited by the measuring instrument). This holds promise for non-contact low power reversible-tunning of photonic circuit elements.

Ultra-narrow-linewidth Al_2O_3:Er^3+ lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform

We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infra-red wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔνQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (R-SHDI).

Athermal synchronization of laser source with WDM filter in a silicon photonics platform

In an optical interconnect circuit, microring resonators (MRRs) are commonly used in wavelength division multiplexing systems. To make the MRR and laser synchronized, the resonance wavelength of the MRR needs to be thermally controlled, and the power consumption becomes significant with a high-channel count. Here, we demonstrate an athermally synchronized rare-earth-doped laser and MRR. The laser comprises a Si3N4 based cavity covered with erbium-doped Al2O3 to provide gain. The low thermo-optic coefficient of Al2O3 and Si3N4 and the comparable thermal shift of the effective index in the laser and microring cross-sections enable lasing and resonance wavelength synchronization over a wide range of temperatures. The power difference between matched and unmatched channels remains greater than 15 dB from 20 to 50 °C due to a synchronized wavelength shift of 0.02 nm/°C. The athermal synchronization approach reported here is not limited to microring filters but can be applied to any Si3N4 filter with integrated lasers using rare earth ion doped Al2O3 as a gain medium to achieve system-level temperature control free operation.

Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm

Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards unconventional photonics platforms. In this work, we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near- to shortwave-infrared. With input pulses of 18 pJ in energy, the generated signal spans the wavelength range from the edge of the silicon transmission window, approximately 1.06 to beyond 2.4 μm, with a −20 dB bandwidth covering 1.124–2.4 μm. An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ (−35 dB bandwidth). We also measured the coherence over an octave, obtaining , in good agreement with the simulations. In addition, we demonstrate optimization of the third-order dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning signal for nonlinear applications. This research paves the way for applications, such as chip-scale precision spectroscopy, optical coherence tomography, optical frequency metrology, frequency synthesis and wide-band wavelength division multiplexing in the telecom window.

Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide

We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D2O) in a D2O-H2O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D2O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

Silicon-on-sapphire nanowire for mid-IR supercontinuum generation

We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. This establishes SOS as a promising new platform for integrated nonlinear photonics in the mid-IR.

Monolithically-integrated distributed feedback laser compatible with CMOS processing

An optically-pumped, integrated distributed feedback laser is demonstrated using a CMOS compatible process, where a record-low-temperature deposited gain medium enables integration with active devices such as modulators and detectors. A pump threshold of 24.9 mW and a slope efficiency of 1.3 % is demonstrated at the lasing wavelength of 1552.98 nm. The rare-earth-doped aluminum oxide, used as the gain medium in this laser, is deposited by a substrate-bias-assisted reactive sputtering process. This process yields optical quality films with 0.1 dB/cm background loss at the deposition temperature of 250 °C, and therefore is fully compatible as a back-end-of-line CMOS process. The aforementioned lasers performance is comparable to previous lasers having gain media fabricated at much higher temperatures (> 550 °C). This work marks a crucial step towards monolithic integration of amplifiers and lasers in silicon microphotonic systems.