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Nelle Peter

Infineon Technologies

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Publication

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Archive | 2003

Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes

Rosmeier Ludwig; Krischke Norbert; Werner Wolfgang; Nelle Peter

Archive | 2001

Lateral high voltage semiconductor element used as a DMOS transistor has semiconductor regions on a semiconductor layer of a semiconductor substrate

Nelle Peter; Fischer Hermann; Werner Wolfgang; Schaefer Herbert

Archive | 2000

Semiconducting circuit arrangement improved to enable yet more effective suppression of unwanted transverse currents

Vietzke Dirk; Stecher Matthias; Schulze Hans-Joachim; Peri Hermann; Nelle Peter; Ploss Reinhard; Kanert Werner

Archive | 2005

Deposition of metallic structure on substrate in semiconductor device manufacture, includes ductile layer to accommodate stresses between structure and substrate by plastic deformation

Stecher Matthias; Schetlick Werner; Nelle Peter

Archive | 2014

TRANSISTORZELLENANORDNUNG MIT HALBLEITERDIODE

Nelle Peter; Zundel Markus

Archive | 2013

Semiconductor component i.e. field effect-controlled semiconductor component, has circulating lateral diffusion barrier whose trench is cut through insulation region and divided into cell area and edge insulation region

Brase Gabriela; Nelle Peter; Schindler Guenther; Zundel Markus

Archive | 2006

Semiconductor component structure for reducing minority carrier injection has a protective structure with active component zones and semiconductor zones

Nelle Peter; Horn Wolfgang; Schulz Hans-Joachim

Archive | 2004

Halbleiterbauelementanordnung mit einer Schutzanordnung zur Reduzierung einer Minoritätsladungsträger-Injektion A semiconductor device assembly comprising a protection arrangement to reduce a minority carrier injection

Wolfgang Horn; Nelle Peter; Schulze Hans-Joachim

Archive | 2003

Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET)

Nelle Peter; Stecher Matthias

Archive | 2001

n-channel MOS-transistor device without latch-up of parasitic bipolar transistor

Nelle Peter

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Stecher Matthias

Infineon Technologies

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Schulze Hans-Joachim

Infineon Technologies

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Vietzke Dirk

Infineon Technologies

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Werner Wolfgang

Infineon Technologies

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Zundel Markus

Infineon Technologies

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Brase Gabriela

Infineon Technologies

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Fischer Hermann

Infineon Technologies

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Hirler Franz

Infineon Technologies

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Horn Wolfgang

Infineon Technologies

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Kanert Werner

Infineon Technologies

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