Nguyen Xuan Truyen
Nagoya University
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Publication
Featured researches published by Nguyen Xuan Truyen.
Japanese Journal of Applied Physics | 2018
Nguyen Xuan Truyen; Noriyuki Taoka; Akio Ohta; Katsunori Makihara; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Mitsuaki Shimizu; Seiichi Miyazaki
The impacts of noble gas species (Ar and He) on the formation of a SiO2/GaN structure formed by a remote oxygen plasma-enhanced chemical vapor deposition (ROPE-CVD) method were systematically investigated. Atomic force microscopy revealed that ROPE-CVD with He leads to a smooth SiO2 surface compared with the case of Ar. We found that no obvious oxidations of the GaN surfaces after the SiO2 depositions with the both Ar and He cases were observed. The capacitance–voltage (C–V) curves of the GaN MOS capacitors formed by ROPE-CVD with the Ar and He dilutions show good interface properties with no hysteresis and good agreement with the ideal C–V curves even after post deposition annealing at 800 °C. Besides, we found that the current density–oxide electric field characteristics shows a gate leakage current for the Ar case lower than the He case.
Japanese Journal of Applied Physics | 2018
Nguyen Xuan Truyen; Noriyuki Taoka; Akio Ohta; Katsunori Makihara; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Mitsuaki Shimizu; Seiichi Miyazaki
The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 °C has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 °C. The capacitance–voltage (C–V) and current density–SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 °C. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.
Japanese Journal of Applied Physics | 2018
Nguyen Xuan Truyen; Akio Ohta; Katsunori Makihara; Mitsuhisa Ikeda; Seiichi Miyazaki
The control of chemical composition and bonding features at a SiO2/GaN interface is a key to realizing high-performance GaN power devices. In this study, an ~5.2-nm-thick SiO2 film has been deposited on an epitaxial GaN(0001) surface by remote O2-plasma-enhanced chemical vapor deposition (O2-RPCVD) using SiH4 and Ar/O2 mixture gases at a substrate temperature of 500 °C. The depth profile of chemical structures and electronic defects of the O2-RPCVD SiO2/GaN structures has been evaluated from a combination of SiO2 thinning examined by X-ray photoelectron spectroscopy (XPS) and the total photoelectron yield spectroscopy (PYS) measurements. As a highlight, we found that O2-RPCVD is effective for fabricating an abrupt SiO2/GaN interface.
Japanese Journal of Applied Physics | 2017
Nguyen Xuan Truyen; Akio Ohta; Katsunori Makihara; Mitsuhisa Ikeda; Seiichi Miyazaki
We have demonstrated a novel dry cleaning process for the 4H-SiC surface using remote hydrogen plasma (H2-RP). The effects of H2-RP exposure on the chemical structures and electronic states of the wet-cleaned 4H-SiC surface have been evaluated by X-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS). XPS shows that H2-RP exposure is effective in removing contaminants from the 4H-SiC surface. PYS indicates that the defect states at the surface are generated after the H2-RP exposure and such generated defect states are drastically decreased by annealing at 850 °C. The combination of H2-RP exposure with the subsequent annealing is found to be effective in 4H-SiC surface cleaning.
symposium on vlsi technology | 2018
Nguyen Xuan Truyen; Noriyuki Taoka; Akio Ohta; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Katsunori Makihara; Mitsuaki Shimizu; Seiichi Miyazaki
Japanese Journal of Applied Physics | 2018
Taishi Yamamoto; Noriyuki Taoka; Akio Ohta; Nguyen Xuan Truyen; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Katsunori Makihara; Mitsuaki Shimizu; Seiichi Miyazaki
Japanese Journal of Applied Physics | 2018
Taishi Yamamoto; Noriyuki Taoka; Akio Ohta; Nguyen Xuan Truyen; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Katsunori Makihara; Osamu Nakatsuka; Mitsuaki Shimizu; Seiichi Miyazaki
Japanese Journal of Applied Physics | 2018
Akio Ohta; Nguyen Xuan Truyen; Nobuyuki Fujimura; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
IEICE Technical Report; IEICE Tech. Rep. | 2018
Nguyen Xuan Truyen; Taoka Noriyuki; Ohta Akio; Yamada Hisashi; Takahashi Tokio; Ikeda Mitsuhisa; Katsunori Makihara; Shimizu Mitsuaki; Miyazaki Seiichi
The Japan Society of Applied Physics | 2017
Taishi Yamamoto; Noriyuki Taoka; Akio Ohta; Nguyen Xuan Truyen; Hisashi Yamamda; Tokio Takahashi; Mitsuhisa Ikeda; Katsunori Makihara; Mitsuaki Shimizu; Seiichi Miyazaki
Collaboration
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National Institute of Advanced Industrial Science and Technology
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