Nicholas J. Ekins-Daukes

Competition between the Charge Transfer State and the Singlet States of Donor or Acceptor Limiting the Efficiency in Polymer:Fullerene Solar Cells

We study the appearance and energy of the charge transfer (CT) state using measurements of electroluminescence (EL) and photoluminescence (PL) in blend films of high-performance polymers with fullerene acceptors. EL spectroscopy provides a direct probe of the energy of the interfacial states without the need to rely on the LUMO and HOMO energies as estimated in pristine materials. For each polymer, we use different fullerenes with varying LUMO levels as electron acceptors, in order to vary the energy of the CT state relative to the blend with [6,6]-phenyl C61-butyric acid methyl ester (PCBM). As the energy of the CT state emission approaches the absorption onset of the blend component with the smaller optical bandgap, E(opt,min) ≡ min{E(opt,donor); E(opt,acceptor)}, we observe a transition in the EL spectrum from CT emission to singlet emission from the component with the smaller bandgap. The appearance of component singlet emission coincides with reduced photocurrent and fill factor. We conclude that the open circuit voltage V(OC) is limited by the smaller bandgap of the two blend components. From the losses of the studied materials, we derive an empirical limit for the open circuit voltage: V(OC) ≲ E(opt,min)/e - (0.66 ± 0.08)eV.

Quantum well solar cells

Abstract This paper reviews the experimental and theoretical studies of quantum well solar cells with an aim of providing the background to the more detailed papers on this subject in these proceedings. It discusses the way quantum wells enhance efficiency in real, lattice matched material systems and fundamental studies of radiative recombination relevant to the question of whether such enhancements are possible in ideal cells. A number of theoretical models for quantum well solar cells (QWSCs) are briefly reviewed and more detail is given of our own groups model of the dark-currents. The temperature and field dependence of QWSCs are all briefly reviewed.

Intermediate band solar cells: Recent progress and future directions

Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed. A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs, the device physics, and the carrier dynamics processes with a particular emphasis on the two-step inter-subband absorption/recombination processes that are of paramount importance in a successful implementation high-efficiency IBSC. The experimental solar cell performance is further discussed, which has been recently demonstrated by using highly mismatched alloys and high-density quantum dot arrays and superlattice. IBSCs having widely different structures, materials, and spectral responses are also covered, as is the optimization of device parameters to achieve maximum performance.

Observation of suppressed radiative recombination in single quantum well p-i-n photodiodes

We have measured electroluminescence (EL) spectra of GaAs/InGaAs and AlGaAs/GaAs single quantum well (QW) p-i-n photodiodes at temperatures between 200 and 300 K and forward biases close to the open circuit voltage. Integrated EL spectra vary like eqV/nkT with an ideality factor n=1.05±0.05 over five decades, indicating purely radiative processes. The spectra are calibrated into absolute units enabling comparison to be made with the predictions of a theoretical model. For each temperature and bias we calculate the EL spectrum and radiative current expected in the detailed balance limit, integrating the theoretical emission spectrum over the surface of the device, in order to establish the quasi-Fermi potential separation, Δφf, in the QW and, where possible, in the host material. For the GaAs/InGaAs cell we are able to model emission from the QW and the host material simultaneously. We find that, in all cases, the QW emission is overestimated by theory if it is assumed that Δφf=V. QW emission corresponds i...

Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes

We illustrate the important trade-off between far-field scattering effects, which have the potential to provide increased optical path length over broad bands, and parasitic absorption due to the excitation of localized surface plasmon resonances in metal nanoparticle arrays. Via detailed comparison of photocurrent enhancements given by Au, Ag and Al nanostructures on thin-film GaAs devices we reveal that parasitic losses can be mitigated through a careful choice of scattering medium. Absorption at the plasmon resonance in Au and Ag structures occurs in the visible spectrum, impairing device performance. In contrast, exploiting Al nanoparticle arrays results in a blue shift of the resonance, enabling the first demonstration of truly broadband plasmon enhanced photocurrent and a 22% integrated efficiency enhancement.

A molecular approach to the intermediate band solar cell: The symmetric case

Molecular materials may overcome some of the difficulties for making an intermediate band solar cell by storing energy in long-lived triplet states. Both the problems of fast nonradiative interband relaxation and selective photon absorption can be solved by this approach. A practical implementation of the molecular intermediate band solar cell is considered with a symmetric band alignment, resting on a proven triplet-triplet annihilation process. The limiting power conversion efficiency for this system exceeds that of a single bandgap device over a broad range, peaking at 40.6% for 1.9eV under 1 sun illumination.

Organic photovoltaic greenhouses: a unique application for semi-transparent PV?

Organic photovoltaics are an emerging solar power technology which embody properties such as transparency, flexibility, and rapid, roll to roll manufacture, opening the potential for unique niche applications. We report a detailed techno-economic analysis of one such application, namely the photovoltaic greenhouse, and discuss whether the unique properties of the technology can provide advantages over conventional photovoltaics. The potential for spectral selectivity through the choice of OPV materials is evaluated for the case of a photovoltaic greenhouse. The action spectrum of typical greenhouse crops is used to determine the impact on crop growth of blocking different spectral ranges from the crops. Transfer matrix optical modelling is used to assess the efficiency and spectrally resolved transparency of a variety of commercially available semi-conducting polymer materials, in addition to a non-commercial low-band-gap material with absorption outside that required for crop growth. Economic analysis suggests there could be a huge potential for OPV greenhouses if aggressive cost targets can be met. Technical analysis shows that semi-transparent OPV devices may struggle to perform better than opaque crystalline silicon with partial coverage, however, OPV devices using the low-band-gap material PMDPP3T, as well as a high efficiency mid-band-gap polymer PCDTBT, can demonstrate improved performance in comparison to opaque, flexible thin-film modules such as CIGS. These results stress the importance of developing new, highly transparent electrode and interlayer materials, along with high efficiency active layers, if the full potential of this application is going to be realised.

Hot Carriers in Quantum Wells for Photovoltaic Efficiency Enhancement

In a hot carrier solar cell, the steady-state carrier population is hot relative to the surrounding lattice. This requires an absorber material which restricts carrier-phonon interaction and, therefore, reduces entropic loss during thermalization. The limiting efficiency of these devices approaches 85%: the Carnot limit for a solar energy collector. A spectroscopic analysis of GaAsP/InGaAs quantum well structures shows that carrier cooling in single quantum well samples is dominated by the rate of radiative recombination, leading to unprecedented carrier cooling lifetime (τ = 5.8 ±0.1 ns). This exceptional lifetime arises due to state saturation, frustrating the carrier scattering processes. A steady-state carrier population temperature >100 K above the lattice temperature is measured under illumination equivalent to 10 000 Suns. We calculate the projected efficiency >40% for a device with these characteristics, amounting to a 3% efficiency enhancement over equivalent single-junction devices.

Effect of well number on the performance of quantum-well solar cells

The effect of increasing the number of quantum wells in a strain-compensated, multiquantum-well solar cell is investigated. It is found that as the well number is increased, dark current level close to the operating point rises linearly. Short-circuit current in the AM0 spectrum also rises linearly with the inclusion of more quantum wells. This allows the cell to maintain a constant open-circuit voltage irrespective of the number of wells grown. This is anticipated to have advantages when the cell is used as a replacement for the GaAs junction in the existing generation of tandem and triple-junction cells since current levels can be matched to the upper junction without detriment to the voltage performance. This result allows us to predict a tandem cell AM0 efficiency of 23.8% based on the 50-well cell.

Photon ratchet intermediate band solar cells

In this paper, we propose an innovative concept for solar power conversion—the “photon ratchet” intermediate band solar cell (IBSC)—which may increase the photovoltaic energy conversion efficiency of IBSCs by increasing the lifetime of charge carriers in the intermediate state. The limiting efficiency calculation for this concept shows that the efficiency can be increased by introducing a fast thermal transition of carriers into a non-emissive state. At 1 sun, the introduction of a “ratchet band” results in an increase of efficiency from 46.8% to 48.5%, due to suppression of entropy generation.