Nick J. Visovsky

High-temperature continuous-wave operation of low power consumption single-mode distributed-feedback quantum-cascade lasers at λ∼5.2 μm

Continuous-wave operation of a distributed-feedback quantum-cascade laser in a packaged module is demonstrated up to a heat sink temperature of 80 °C with an output power of greater than 10 mW and a power consumption of less than 3.8 W. Single longitudinal mode emission near 5.24 μm is observed over a temperature range from 10 to 80 °C with a side mode suppression ratio greater than 20 dB limited by the instrumentation. A single spatial mode is determined with far-field pattern measurement. The above performance is achieved using a buried heterostructure and a small cavity of 7.6 μm×1.5 mm.

107-mW low-noise green-light emission by frequency doubling of a reliable 1060-nm DFB semiconductor laser diode

We have generated 107-mW green-light emission by frequency doubling of a reliable 1060-nm distributed feedback (DFB) laser diode using a periodically poled MgO-doped lithium niobate waveguide in the most compact single-pass configuration. The green power variation is lower than 1% at frequencies below 82 kHz. The relative intensity noise of -150 dB/Hz has been measured at 100 MHz. We also report 5000-h life-test results of 1060-nm DFB lasers at 80/spl deg/C.

High-power high-Modulation-speed 1060-nm DBR lasers for Green-light emission

We report on the static and dynamic performance of high-power and high-modulation-speed 1060-nm distributed Bragg reflector (DBR) lasers for green-light emission by second-harmonic generation. Single-wavelength power of 387 mW at 1060-nm wavelength and green power as high as 99.5 mW were achieved. A thermally induced wavelength tuning of 2.4 nm and a carrier-induced wavelength tuning of -0.85 nm were obtained by injecting current into the DBR section. Measured rise-fall times of 0.2 ns for direct intensity modulation and 0.6 ns for wavelength modulation make the lasers suitable for >50-MHz green-light modulation applications

304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode

We report for the first time, to the best of our knowledge, 304 mW green light emission generated by frequency doubling of the output from a 1060-nm DBR semiconductor laser using a periodically poled MgO-doped lithium niobate waveguide in a compact single-pass configuration. The excellent performance of these DBR lasers, including a kink-free power greater than 750 mW, single-spatial-mode output beam, single-wavelength emission spectra, and high wavelength-tuning efficiency, plays an important role in the generation of high-power green light.

Room Temperature CW Operation of Short Wavelength Quantum Cascade Lasers Made of Strain Balanced Ga

We present our recent development of short wavelength quantum cascade lasers (QCLs) made of strain balanced Ga_xIn_1-xAs/Al_yIn_1-yAs material on InP substrates. We demonstrate room temperature continuous-wave (CW) lasing of the fundamental lateral mode at four wavelengths of 4.6, 4.0, 3.8, and 3.5 μm. We obtained 60-mW CW output power at 10 °C and 3.55-μm wavelength, which is the shortest CW lasing wavelength demonstrated at room temperature by a QCL, to the best of our knowledge. We also performed a life test on λ = 4.6 μm QCL chips. To date, we have accumulated the life test data for more than 11 000 and 4100 h under two aging conditions, 20°C and 0.85-A constant current, and 60°C and 1-A constant current, respectively.

_{\bm x}

We present the design and the performance of midinfrared distributed feedback (DFB) quantum cascade lasers (QCLs) made of strain balanced Ga_xIn_1-xAs/Al_yIn_1-yAs material on InP substrates for sensing CO₂, N₂O, and NO in the middle wavelength range of mid-IR from 4 to 6 μm. We present the performances of our DFB QCLs at three different aspects: high power, low threshold power consumption, and wide wavelength coverage. We demonstrated a continuous wave (CW) DFB QCL with an output power of 220mW at 20°C, a CW DFB QCL with low threshold voltage of 8V and low-divergent far-field angles of 27.5° × 32.9° by reducing the number of quantum cascaded stages, a CW DFB QCL with a low threshold power consumption of 0.7W by reducing doping density in the active core, and DFB QCLs wide wavelength coverage of 325 cm^-1, 16.9% of center wavelength at 5.2 μm, within one wafer by changing the grating period. 12 DFB QCL chips have being aged for 3000 h under 25°C and a constant quasi-CW current of 0.37 A. No decrease in power was observed.

In

We present a detailed experimental study of optical property of green InGaN quantum wells and optically pumped lasers, with cleaved m-plane facets and a lasing wavelength in the range of 520-530 nm, grown on semipolar (11-22) planes. Taking advantage of low transparency carrier density of the lowest-energy valence band and overcoming low differential gain by minimizing the optical loss of the laser structure, we demonstrated a low threshold pumping power of 120 mW.

_{\bm {1-x}}

We report a high kink-free facet power of 852 mW and a high single-wavelength facet power of 350 mW for 1060-nm raised-ridge Fabry-Perot (FP) and distributed-feedback (DFB) lasers, respectively.

As/Al

We report on the design, fabrication and performance of high-power and high-modulation-speed 1060-nm DBR lasers for green-light emission by second harmonic generation. Single-spatial-mode and single-wavelength power more than 450 mW of 1060-nm wavelength was achieved with a 3-section DBR laser with non-absorbing DBR and phase sections created by an impurity-free quantum-well intermixing technique. A thermally-induced wavelength tuning of 2.4 nm and a carrier-induced wavelength tuning of -0.85 nm were obtained by injecting current into the DBR section. The green power as high as 104.6 mW was demonstrated by coupling the DBR laser output to a second-harmonic-generation waveguide. Measured rise/fall times of 0.2 ns for direct intensity modulation and 0.6 ns for wavelength modulation make the DBR lasers suitable for >=50-MHz green-light-modulation applications. The detrimental thermally-induced patterning effect and a differential-phase modulation scheme as a solution are discussed.

_{\bm y}

The wavelength tunable 1060-nm distributed Bragg reflector (DBR) laser chip consists of three sections: a gain section for lasing, and phase and DBR sections for wavelength control. A micro-heater is lithographically integrated on the top of the DBR section to tune the emission wavelength. The phase section is designed with either a top heater or by current injection to provide fine tuning of the wavelength. The wavelength tuning efficiency of our DBR laser is approximately 9 nm/W at the laser heat sink temperature of 25°C. Single-mode output powers of 686 mW and 605 mW were obtained at a CW gain drive current of 1.25 A and heat sink temperatures of 25°C and 60°C, respectively. Gain-switching by applying 1.1 GHz sinusoidal signal mixed with 600 mA DC injection current produced approximately 58 ps long optical pulses with 3.1 W peak power and 228 mW average power. The average power increased to 267 mW and pulse width broadened to 70 ps with DC bias of 700 mA. In CW operation, one of the applications for high-power single-mode DBR lasers is for non-linear frequency conversion. The light emitted from the 1060-nm DBR laser chip was coupled into a single-mode periodically poled lithium niobate (PPLN) crystal waveguide. Up to 350 mW optical power at 530 nm with the wall-plug efficiency of up to 15% was demonstrated.