Nicolas Fressengeas

Bandgap energy bowing parameter of strained and relaxed InGaN layers

This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed InxGa1−xN layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0<x<0.25. The bangap emission energy is characterized by cathodoluminescence and the indium composition as well as the strain state are deduced from high resolution X-ray diffraction measurements. The experimental variation of the bangap emission energy with indium content can be described by the standard quadratic equation, fitted using a relative least square method and qualified with a chi square test. Our approach leads to values of the bandgap energy bowing parameter equal to 2.87±0.20eV and 1.32±0.28eV for relaxed and strained layers (determined for the first time since the revision of the InN bandgap energy in 2002), respectively. The corresponding modified Vegard’s laws describe accurately the indium content dependence of the bandgap emission energy in InGaN alloy and for the whole range of indium content. Finally, as an example of application, 3D mapping of indium content in a thick InGaN layer is deduced from bandgap energy measurements using cathodoluminescence and a corresponding hyperspectral map.

Build up mechanisms of (1+1)-dimensional photorefractive bright spatial quasi-steady-state and screening solitons

A (1+1)-dimensional model is studied numerically to evidence the build up mechanisms of photorefractive solitons, from the characteristic carrier recombination time, through the quasi-steady-state soliton, to the screening soliton. Three different build up regimes are evidenced and their domain of existence are computed. The transient quasi-steady-state soliton is shown to be characterized by two constants: its normalized width and its normalized build up time response multiplied by its peak intensity over dark irradiance. This latter assertion allows us to predict the photorefractive soliton response time for various optical powers. It is thus compared to existing experimental results.

End-of-fiber polymer tip: manufacturing and modeling

Abstract A flexible method of manufacturing polymer elements at the extremity of both single mode and multimode optical fibers is reported. The procedure consists in depositing a drop of liquid photopolymerizable formulation on the cleaved fiber and using the light emerging from the fiber to induce polymerization process. After exposure and rinsing with methanol, a polymer tip is firmly attached to the fiber as an extension of the fiber core. When this process is applied to a multimode fiber, the fabricated polymer element can be the 3D mold of a pre-selected linearly polarized (LP) mode of the fiber. A numerical calculation (consisting on a beam propagation method (BPM) in a medium whose refractive index is time-varying) has shown that our method is based on a gradual growth, just above the fiber core, of an optical waveguide in the liquid formulation. At the end of this paper, potential uses of the obtained tipped-fibers are hinted.

Oxide confinement and high contrast grating mirrors for Mid-infrared VCSELs

A new mid-infrared (MIR) Vertical Cavity Surface Emitting Laser (VCSEL) structure is proposed. We have integrated to the VCSEL structure both an oxide aperture for lateral confinement, and a sub-wavelength high-contrast-grating top mirror. Upon the GaSb-based half-VCSEL, we have grown a metamorphic AlGaAs heterostructure to enable thermal oxidation and grating mirror fabrication steps. A methodology based on optimization and anti-optimization methods has been used to design the optical grating, with improved parameter tolerances regarding processing errors. Finally, we show the complete fabrication of an electrically-pumped MIR monolithic VCSEL structure implementing both oxide confinement and a subwavelength grating top mirror.

Simulation study of a new InGaN p-layer free Schottky based solar cell

On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition. The choice of the main structure of the InGaN solar cell is however crucial. Obtaining a high efficiency requires to improve the light absorption and the photogenerated carriers collection that depend on the layers parameters, including the Indium composition, p-and n-doping, device geometry.. . Unfortunately, one of the main drawbacks of InGaN is linked to its p-type doping, which is very difficult to realize since it involves complex technological processes that are difficult to master and that highly impact the layer quality. In this paper, the InGaN p-n junction (PN) and p-in junction (PIN) based solar cells are numerically studied using the most realistic models, and optimized through mathematically rigorous multivariate optimization approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for the PN and PIN structures. It also leads to propose, analyze and optimize player free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and a new MIN structure for which the optimal efficiencies are shown to be a little higher than for the conventional structures: respectively 18.2% and 19.8%. The tolerance that is allowed on each parameter for each of the proposed cells has been studied. The new MIN structure is shown to exhibit the widest tolerances on the layers thicknesses and dopings. In addition to its being player free, this is another advantage of the MIN structure since it implies its better reliability. Therefore, these new InGaN SBSC are shown to be alternatives to the conventional structures that allow removing the p-type doping of InGaN while giving photovoltaic (PV) performances at least comparable to the standard multilayers PN or PIN structures.

Near infrared photorefractive self focusing in Sn 2 P 2 S 6 :Te crystals

The experimental observation of photorefractive self focusing in Sn(2)P(2)S(6) : Te bulk crystals at 1.06 mum wavelength is presented. Steady state self focusing is reached as fast as 15 ms for an input peak intensity equal to 160 W/cm(2). Self focusing is maximum for input peak intensities around 15 W/cm(2) and is decreasing for intensities below and above this value.

Temporal behavior of two-wave-mixing in photorefractive InP:Fe versus temperature

The temporal response of two-wave-mixing in photorefractive InP:Fe under a dc electric field at different temperatures has been studied. In particular, the temperature dependence of the characteristic time constant has been studied both theoretically and experimentally, showing a strongly decreasing time constant with increasing temperature.

LASER BEAM SELF-FOCUSING IN PHOTOREFRACTIVE MATERIALS: OPTICAL LIMITING APPLICATION

This paper presents a way to achieve optical limiting using the self-focusing of a laser beam in a photorefractive medium. In this view, the protection is not based on the absorption of the beam energy in the limiting system but on a global defocusing of the light in the optical system. We have studied experimentally and theoretically the self-focusing of a single laser beam in electrically biased Bi12TiO20 from the continuous to the pulsed regime. We show that photorefractive materials are, for given conditions, efficient against laser radiation on these two different time scales at a low energy level (nJ).

Mid-infrared sub-wavelength grating mirror design: tolerance and influence of technological constraints

High polarization selective Si/SiO2 mid-infrared sub-wavelength grating mirrors with large bandwidth adapted to VCSEL integration are compared. These mirrors have been automatically designed for operation at λ = 2.3 µm by an optimization algorithm which maximizes a specially defined quality factor. Several technological constraints in relation with the grating manufacturing process have been imposed within the optimization algorithm and their impact on the optical properties of the mirror have been evaluated. Furthermore, through the tolerance computation of the different dimensions of the structure, the robustness with respect to fabrication errors has been tested. Finally, it appears that the increase of the optical performances of the mirror imposes a less tolerant design with severer technological constraints resulting in a more stringent control of the manufacturing process.

Theory of photorefractive resonance for localized beams in two-carrier photorefractive systems

This paper extends the existing theory of two carrier photorefractivity resonance, which is generally applied to Iron doped Indium Phosphide (InP:Fe), to the case of low non-harmonic illumination. The space charge field profile is computed, and the variations of its amplitude, width and position are determined as functions of the background intensity. The effect of photorefractive resonance on these quantities is evidenced, contributing to the understanding of published experimental results in InP:Fe.