Nir Kedem

Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells

Direct comparison between perovskite-structured hybrid organic-inorganic methylammonium lead bromide (MAPbBr3) and all-inorganic cesium lead bromide (CsPbBr3), allows identifying possible fundamental differences in their structural, thermal and electronic characteristics. Both materials possess a similar direct optical band gap, but CsPbBr3 demonstrates a higher thermal stability than MAPbBr3. In order to compare device properties, we fabricated solar cells, with similarly synthesized MAPbBr3 or CsPbBr3, over mesoporous titania scaffolds. Both cell types demonstrated comparable photovoltaic performances under AM1.5 illumination, reaching power conversion efficiencies of ∼6% with a poly aryl amine-based derivative as hole transport material. Further analysis shows that Cs-based devices are as efficient as, and more stable than methylammonium-based ones, after aging (storing the cells for 2 weeks in a dry (relative humidity 15-20%) air atmosphere in the dark) for 2 weeks, under constant illumination (at maximum power), and under electron beam irradiation.

Light-Induced Increase of Electron Diffusion Length in a p–n Junction Type CH3NH3PbBr3 Perovskite Solar Cell

High band gap, high open-circuit voltage solar cells with methylammonium lead tribromide (MAPbBr3) perovskite absorbers are of interest for spectral splitting and photoelectrochemical applications, because of their good performance and ease of processing. The physical origin of high performance in these and similar perovskite-based devices remains only partially understood. Using cross-sectional electron-beam-induced current (EBIC) measurements, we find an increase in carrier diffusion length in MAPbBr3(Cl)-based solar cells upon low intensity (a few percent of 1 sun intensity) blue laser illumination. Comparing dark and illuminated conditions, the minority carrier (electron) diffusion length increases about 3.5 times from Ln = 100 ± 50 nm to 360 ± 22 nm. The EBIC cross section profile indicates a p-n structure between the n-FTO/TiO2 and p-perovskite, rather than the p-i-n structure, reported for the iodide derivative. On the basis of the variation in space-charge region width with varying bias, measured by EBIC and capacitance-voltage measurements, we estimate the net-doping concentration in MAPbBr3(Cl) to be 3-6 × 10(17) cm(-3).

Aluminum oxide–n-Si field effect inversion layer solar cells with organic top contact

We demonstrate a solar cell that uses fixed negative charges formed at the interface of n-Si with Al2O3 to generate strong inversion at the surface of n-Si by electrostatic repulsion. Built-in voltages of up to 755 mV are found at this interface. In order to harness this large built-in voltage, we present a photovoltaic device where the photocurrent generated in this inversion layer is extracted via an inversion layer induced by a high work function transparent organic top contact, deposited on top of a passivating and dipole-inducing molecular monolayer. Results of the effect of the molecular monolayer on device performance yield open-circuit voltages of up to 550 mV for moderately doped Si, demonstrating the effectiveness of this contact structure in removing the Fermi level pinning that has hindered past efforts in developing this type of solar cell with n-type Si.