Nitesh Madaan

Silicon (100)/SiO2 by XPS

Silicon (100) substrates are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al Kα radiation. Survey scans show that the material is primarily silicon and oxygen with small amounts of carbon, nitrogen, and fluorine contamination. The Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) is estimated using the equation of Strohmeier. The oxygen peak is symmetric. These silicon wafers are used as the substrate for subsequent growth of templated carbon nanotubes in the preparation of microfabricated thin layer chromatography plates.

Ozone priming of patterned carbon nanotube forests for subsequent atomic layer deposition-like deposition of SiO2 for the preparation of microfabricated thin layer chromatography plates

The authors report the ozonation of patterned, vertically aligned carbon nanotube (CNT) forests as a method of priming them for subsequent pseudo atomic layer deposition (ψ-ALD) (alternating layer deposition) of silica to produce microfabricated, CNT-templated thin layer chromatography (TLC) plates. Gas phase ozonation simplifies our deposition scheme by replacing two steps in our previous fabrication process: chemical vapor deposition of carbon and ALD of Al2O3, with this much more straightforward priming step. As shown by x-ray photoelectron spectroscopy (XPS), ozonation appears to prime/increase the number of nucleation sites on the CNTs by oxidizing them, thereby facilitating conformal growth of silica by ψ-ALD, where some form of priming appears to be necessary for this growth. (As shown previously, ψ-ALD of SiO2 onto unprimed CNTs is ineffective and leads to poor quality depositions.) In conjunction with a discussion of the challenges of good peak fitting of complex C 1s XPS narrow scans, the author...

Hydrogen Plasma Treatment of Silicon Dioxide for Improved Silane Deposition

We describe a method for plasma cleaning silicon surfaces in a commercial tool that removes adventitious organic contamination and enhances silane deposition. As shown by wetting, ellipsometry, and XPS, hydrogen, oxygen, and argon plasmas effectively clean Si/SiO2 surfaces. However, only hydrogen plasmas appear to enhance subsequent low-pressure chemical vapor deposition of silanes. Chemical differences between the surfaces were confirmed via (i) deposition of two different silanes: octyldimethylmethoxysilane and butyldimethylmethoxysilane, as evidenced by spectroscopic ellipsometry and wetting, and (ii) a principal components analysis (PCA) of TOF-SIMS data taken from the different plasma-treated surfaces. AFM shows no increase in surface roughness after H2 or O2 plasma treatment of Si/SiO2. The effects of surface treatment with H2/O2 plasmas in different gas ratios, which should allow greater control of surface chemistry, and the duration of the H2 plasma (complete surface treatment appeared to take place quickly) are also presented. We believe that this work is significant because of the importance of silanes as surface functionalization reagents, and in particular because of the increasing importance of gas phase silane deposition.

Attachment of Polybutadienes to Hydrogen-Terminated Silicon and Post-Derivatization of the Adsorbed Species

We report the first attachment of polymers with pendant vinyl groups to hydrogen-terminated silicon(111) (Si(111)-H); 1,2-polybutadiene (M(w) = 3200-3500 g/mol) was attached to Si(111)-H under mild conditions at room temperature with visible light. We also report the partial functionalization, in solution, of 1,2-polybutadiene with various thiols using thiol-ene chemistry and the subsequent attachments of these compounds to Si(111)-H. The partially functionalized or unfunctionalized polybutadienes allow further functionalization at the surface through their unreacted carbon-carbon double bonds. We present this as a useful strategy for silicon surface modification. Surfaces were characterized with contact angle goniometry, spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), and atomic force microscopy (AFM).

Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Kα radiation. An XPS survey scan, an Al 2p narrow scan, an O 1s narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

Thermally Evaporated Iron (Oxide) on an Alumina Barrier Layer, by XPS

We report the XPS characterization of a thermally evaporated iron thin film (6 nm) deposited on an Si/SiO2/Al2O3 substrate using Al Kα x-rays. An XPS survey spectrum, Fe 2p and O 1s narrow scans, and a valence band scan are shown.

Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

Herein we show characterization of an Fe thin film on Al2O3 after thermal annealing under H2 using Al Kα x-rays. The XPS survey spectrum, Fe 2p and O 1s narrow scans, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al2O3 film during Fe nanoparticle formation.

Introduction of thiol moieties, including their thiol–ene reactions and air oxidation, onto polyelectrolyte multilayer substrates

We describe the derivatization of uncross-linked and cross-linked layer-by-layer (LbL) assemblies of polyelectrolytes (polyallylamine hydrochloride and polyacrylic acid) with sulfydryl groups via Trauts reagent (2-iminothiolane). This thiolation was optimized with regards to temperature, concentration, and pH. The stability of the resulting -SH groups in the air was determined by X-ray photoelectron spectroscopy (XPS). This air oxidation has obvious implications for the use of thiol-ene reactions in materials chemistry, and there appears to be little on this topic in the literature. Three main S 2s signals were observed by XPS: at 231.5 eV (oxidized sulfur), 227.6 eV (thiol groups), and 225.4 eV (thiolate groups). Due to their rapid oxidation, we recommend that thiolated surfaces be used immediately after they are prepared. As driven by 254 nm UV light, thiol groups on polyelectrolyte multilayers react with 1,2-polybutadiene (PBd), and residual carbon-carbon double bonds on adsorbed PBd similarly react with another thiol. In the case of a fluorinated thiol, surfaces with high water contact angles (ca. 120°) are obtained. Modest exposures to light result in derivatization, while longer exposures damage the assemblies. Polyelectrolyte-thiol-PBd-thiol assemblies delaminate from their substrates when immersed for long periods of time in water. Surface silanization with an amino silane prevents this delamination and leads to stable assemblies. These assemblies withstand various stability tests. Techniques used to analyze the materials in this study include X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), and contact angle goniometry.