Nitin S. Malik

Strain-mediated coupling in a quantum dot–mechanical oscillator hybrid system

Recent progress in nanotechnology has allowed the fabrication of new hybrid systems in which a single two-level system is coupled to a mechanical nanoresonator. In such systems the quantum nature of a macroscopic degree of freedom can be revealed and manipulated. This opens up appealing perspectives for quantum information technologies, and for the exploration of the quantum-classical boundary. Here we present the experimental realization of a monolithic solid-state hybrid system governed by material strain: a quantum dot is embedded within a nanowire that features discrete mechanical resonances corresponding to flexural vibration modes. Mechanical vibrations result in a time-varying strain field that modulates the quantum dot transition energy. This approach simultaneously offers a large light-extraction efficiency and a large exciton-phonon coupling strength g0. By means of optical and mechanical spectroscopy, we find that g0/2 π is nearly as large as the mechanical frequency, a criterion that defines the ultrastrong coupling regime.

Dielectric GaAs antenna ensuring an efficient broadband coupling between an InAs quantum dot and a Gaussian optical beam.

We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission control provided by a single-mode photonic wire and the adiabatic expansion of this mode within a conical taper. Numerical simulations highlight the outstanding performance and robustness of this concept. As a first application in the field of quantum optics, we report the realisation of an ultra-bright single-photon source. The device, a GaAs photonic trumpet containing few InAs quantum dots, demonstrates a first-lens external efficiency of 0.75 ± 0.1.

Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes

We present room temperature, continuous wave operation of laser diodes based on whispering gallery mode microcylinder and microring resonators featuring an emission wavelength at around 1.3 μm and lasing thresholds of a few mA.

Whispering gallery mode lasing in high quality GaAs/AlAs pillar microcavities

We report whispering gallery mode (WGM) lasing from high quality GaAs/AlAs micropillars with embedded InAs quantum dots, under continuous optical pumping. For temperatures ranging from 5 to 100 K, simultaneous lasing from TE1,1,m WGMs is observed for pillar diameters in the 3–4 μm range. Spectral linewidths and energy shifts of the lasing modes are analyzed as a function of the pump power. Thanks to the efficient heat sinking provided by the micropillar geometry, a clear line narrowing is observed above threshold. Moreover, the lasing mode energy remains stable for pump power as large as six times the lasing threshold.

Large and Uniform Optical Emission Shifts in Quantum Dots Strained along Their Growth Axis

We introduce a calibration method to quantify the impact of external mechanical stress on the emission wavelength of distinct quantum dots (QDs). Specifically, these emitters are integrated in a cross-section of a semiconductor core wire and experience a longitudinal strain that is induced by an amorphous capping shell. Detailed numerical simulations show that, thanks to the shell mechanical isotropy, the strain in the core is uniform, which enables a direct comparison of the QD responses. Moreover, the core strain is determined in situ by an optical measurement, yielding reliable values for the QD emission tuning slope. This calibration technique is applied to self-assembled InAs QDs submitted to incremental elongation along their growth axis. In contrast to recent studies conducted on similar QDs submitted to a uniaxial stress perpendicular to the growth direction, optical spectroscopy reveals up to ten times larger tuning slopes, with a moderate dispersion. These results highlight the importance of the stress direction to optimize the QD optical shift, with general implications, both in static and dynamic regimes. As such, they are in particular relevant for the development of wavelength-tunable single-photon sources or hybrid QD opto-mechanical systems.

Surface effects in a semiconductor photonic nanowire and spectral stability of an embedded single quantum dot

We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant quantum optics experiments at the single photon level. We attribute the drift to the sticking of oxygen molecules onto the wire, which modifies the surface charge and hence the electric field seen by the quantum dot. The influence of temperature and excitation laser power on this phenomenon is studied. Most importantly, we demonstrate a proper treatment of the nanowire surface to suppress the drift.

Strain-Gradient Position Mapping of Semiconductor Quantum Dots

We introduce a nondestructive method to determine the position of randomly distributed semiconductor quantum dots (QDs) integrated in a solid photonic structure. By setting the structure in an oscillating motion, we generate a large stress gradient across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress to map the position of QDs deeply embedded in a photonic wire antenna with an accuracy ranging from ±35  nm down to ±1  nm. In the context of fast developing quantum technologies, this technique can be generalized to different photonic nanostructures embedding any stress-sensitive quantum emitters.

Giant nonlinear interaction between two optical beams via a quantum dot embedded in a photonic wire

Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a three-level structure in a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. The large coupling efficiency and the broad operation bandwidth of the photonic wire enable us to have two different laser beams interacting with the QD in order to control the reflectivity of a laser beam with the other one using as few as 10 photons per QD lifetime. We discuss the possibilities offered by this easily integrable system for ultra-low power logical gates and optical quantum gates.

High brightness single photon sources based on photonic wires

We present a novel single-photon-source based on the emission of a semiconductor quantum dot embedded in a single-mode photonic wire. This geometry ensures a very large coupling (≫ 95%) of the spontaneous emission to the guided mode. Numerical simulations show that a photon collection efficiency as large as 90% can be obtained for engineered nanowires with a tapered tip and a metallic bottom mirror coated by a thin dielectric layer. Experimentally, a record-high efficiency of 75 ± 10% (for a NA = 0.75 collection optics) has been measured for an InAs quantum dot embedded in such a nanowire, made of GaAs and defined by reactive-ion etching.

Ultra-low power optical transistor using a single quantum dot embedded in a photonic wire

Optical logic down to the single photon level holds the promise of data processing with a better energy efficiency than electronic devices [1]. In addition, preservation of quantum coherence in such logical components would enable optical quantum logical gates [2-8]. Optical logic requires optical non-linearities to allow for photon-photon interactions. Non-linearities usually appear for large intensities, but discrete transitions in a well coupled single two-level system allow for giant non-linearities operating at the single photon level.