Noam Ophir

WDM-compatible mode-division multiplexing on a silicon chip

Significant effort in optical-fibre research has been put in recent years into realizing mode-division multiplexing (MDM) in conjunction with wavelength-division multiplexing (WDM) to enable further scaling of the communication bandwidth per fibre. In contrast, almost all integrated photonics operate exclusively in the single-mode regime. MDM is rarely considered for integrated photonics because of the difficulty in coupling selectively to high-order modes, which usually results in high inter-modal crosstalk. Here we show the first microring-based demonstration of on-chip WDM-compatible mode-division multiplexing with low modal crosstalk and loss. Our approach can potentially increase the aggregate data rate by many times for on-chip ultrahigh bandwidth communications.

Silicon Photonic Microring Links for High-Bandwidth-Density, Low-Power Chip I/O

Silicon photonic microrings have drawn interest in recent years as potential building blocks for high-bandwidth off-chip communication links. The authors analyze a terabit-per-second scale unamplified microring link based on current best-of-class devices. The analysis provides quantitative measures for the achievable energy efficiency and bandwidth density that could be realized within several years. The results highlight key device attributes that require significant advancement to realize sub-pJ/bit scale optical links.

Broadband Silicon Photonic Electrooptic Switch for Photonic Interconnection Networks

We present a silicon photonic microring resonator electrooptic switch, demonstrate error-free switching of single-channel data rates up to 40 Gb/s, and characterize the device using bit-error-rate and power penalty metrics. We experimentally verify penalty-free switching of single-channel data rates up to 10 Gb/s, and low-penalty switching up to 40 Gb/s, firmly establishing the feasibility of this switch for high-performance photonic networks-on-chip.

Width-modulation of Si photonic wires for quasi-phase-matching of four-wave-mixing: experimental and theoretical demonstration.

We experimentally demonstrate quasi-phase-matched (QPM) four-wave-mixing (FWM) in silicon (Si) nanowire waveguides with sinusoidally modulated width. We perform discrete wavelength conversion over 250 nm, and observe 12 dB conversion efficiency (CE) enhancement for targeted wavelengths more than 100 nm away from the edge of the 3-dB conversion bandwidth. The QPM process in Si nanowires is rigorously modeled, with results explaining experimental observations. The model is further used to investigate the dependence of the CE on key device parameters, and to introduce devices that facilitate wavelength conversion between the C-band and mid-IR. Devices based on a superposition of sinusoidal gratings are investigated theoretically, and are shown to provide CE enhancement over the entire C-band. Width-modulation is further shown to be compatible with zero-dispersion-wavelength pumping for broadband wavelength conversion. The results indicate that QPM via width-modulation is an effective technique for extending the spectral domain of efficient FWM in Si waveguides.

First demonstration of long-haul transmission using silicon microring modulators

We report error-free long-haul transmission of optical data modulated using a silicon microring resonator electro-optic modulator with modulation rates up to 12.5 Gb/s. Using bit-error-rate and power penalty characterizations, we evaluate the performance of this device with varying modulation rates, and perform a comparative analysis using a commercial electro-optic modulator. We then experimentally measure the signal integrity degradation of the high-speed optical data with increasing propagation distances, induced chromatic dispersions, and bandwidth-distance products, showing error-free transmission for propagation distances up to 80 km. These results confirm the functional ubiquity of this silicon modulator, establishing the potential role of silicon photonic interconnects for chip-scale high-performance computing systems and memory access networks, optically-interconnected data centers, as well as high-performance telecommunication networks spanning large distances.

Error-free transmission of microring-modulated BPSK

We demonstrate the generation of error-free binary-phase-shift-keyed (BPSK) data at 5 Gb/s using a silicon microring modulator. The microring-modulated BPSK signal is propagated at fiber lengths up to 80 km, maintaining error-free performance, while demonstrating resilience to chromatic dispersion. Bit-error-rate measurements and eye diagrams show near equivalent performance of a microring-based BPSK modulator as compared to commercial LiNbO₃ phase modulators.

Continuous Wavelength Conversion of 40-Gb/s Data Over 100 nm Using a Dispersion-Engineered Silicon Waveguide

We demonstrate broadband continuous wavelength conversion based on four-wave mixing in silicon waveguides, operating with data rates up to 40 Gb/s, validating signal integrity using bit-error-rate measurements. The dispersion-engineered silicon waveguide provides broad phase-matching bandwidth, enabling complete wavelength-conversion coverage of the S -, C-, and L-bands of the International Telecommunication Union (ITU) grid. We experimentally show this with wavelength conversion of high-speed data exceeding 100 nm, and characterize the resulting power penalty induced by the wavelength conversion process. We then validate the bit-rate transparency of the all-optical process by scaling the data rate from 5 Gb/s up to 40 Gb/s at the 100-nm wavelength conversion configuration, showing consistent low power penalties, validating the robustness of the four-wave mixing process in the silicon platform for all-optical processing.

A high-responsivity photodetector absent metal-germanium direct contact

We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at -4 V reverse bias and 1.44 A/W at -12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.

First Demonstration of a 10-Gb/s RZ End-to-End Four-Wave-Mixing Based Link at 1884 nm Using Silicon Nanowaveguides

We demonstrate a double-stage four-wave mixing (FWM) scheme in silicon nanowaveguides which allows effective optical time-division-multiplexed data generation and reception in the 2-μm region. The scheme is based on a first mixing stage which unicasts a high-speed return-to-zero stream from the C-band to 1884-nm, followed by a second mixing stage which wavelength converts the data from 1884-nm down to the O-band for detection. The 10-Gb/s data traverses an aggregate record distance of 909 nm in the cascaded wavelength-conversion and unicast stages, with a power penalty of 2.5 dB. This scheme effectively overcomes the lack of commercially-available high-performance sources and receivers at 2 μm by relying on telecommunication band components along with ultrabroad FWM silicon devices.

Wavelength conversion and unicast of 10-Gb/s data spanning up to 700 nm using a silicon nanowaveguide.

We report extremely large probe-idler separation wavelength conversion (545 nm) and unicast (700 nm) of 10-Gb/s data signals using a dispersion-engineered silicon nanowaveguide. Dispersion-engineered phase matching in the device provides a continuous four-wave-mixing efficiency 3-dB bandwidth exceeding 800 nm. We report the first data validation of wavelength conversion (data modulated probe) and unicast (data modulated pump) of 10-Gb/s data with probe-idler separations spanning 60 nm up to 700 nm accompanied with sensitivity gain in a single device. These demonstrations further validate the silicon platform as a highly broadband flexible platform for nonlinear all-optical data manipulation.