Nobuyuki Komaba

Two-Phase Drive Self-Scanning Light-Emitting Device (SLED) Using Coupling Diodes

The self-scanning light-emitting device (SLED) is expected to become a new key device for two-dimensional optical information processing, because the light-emitting ON-states of the SLED are automatically transferred by input clock pulses, and the optical pulses can start the transfer action from any elements. It will be important to decrease the number of transfer clock lines in order to realize the highly packed two-dimensional integrated SLED. Therefore, we propose the two-phase drive SLED using coupling diodes and demonstrate its operation. It has a wide operating margin as well as 10 MHz as the maximum transfer frequency.

AlGaAs grating surface-emitting beam deflector with ridge structure

A ridge-waveguide-type AlGaAs grating surface-emitting beam deflector was fabricated. The deflection is controlled by carrier-induced refractive-index change of the waveguide. The maximum deflection angle change is about 0.6 degrees , which corresponds to about ten resolvable spots. The temperature raising of the active layer was estimated in comparison with the characteristics for direct and pulsed current operation. It was 6.5 degrees C for the injection current (DC) of 20 mA.<<ETX>>

Proposal of self-scanning light emitting device (SLED)

A novel functional optoelectronic device, the self-scanning light-emitting device (SLED), is proposed. The SLED consists of light-emitting thyristors whose turn-on voltages interact with each other, and the light-emitting element is automatically transferred by input clock pulses. GaAs SLED operation was demonstrated using four phase transfer clock pulses, and a maximum transfer rate of 3 MHz was obtained. It is suggested that the SLED is promising for optical computing and optical interconnection technology with high-density integration.<<ETX>>

Integrated self-scanning light-emitting device (SLED)

The fabrication of monolithically integrated self-scanning light-emitting device (SLED) on a GaAs substrate and its performance are described. The SLED consists of integrated light-emitting thyristors whose turn-on voltages interact with each other through coupling diodes or resistors. Light-emitting states are automatically transferred by input clock pulses without using external shift registers. The resistors are made of a Cr-SiO cermet film, and the coupling diodes are made in part with p-n layers of thyristors. The integrated SLED is fabricated in eight photolithographic steps. High-speed operation, more than 10 MHz, can be achieved due to its simple structure and high-density packaging. It is expected that this SLED will be a key device in future large-scale optoelectronic integrated circuits. >

Proposal of Integrated Light Emitting Device Array with Shift Register

We propose two types of new integrated light-emitting device arrays with a shift register for the photo-printer head. The proposed device arrays consist of a self-scanning light-emitting device (SLED) as a shift register and light-emitting thyristors for printing. One of the proposed device arrays, which has 12 bits and a 62.5-µm-pitch thyristor array, was fabricated and demonstrated. It has a wide operating margin of about 2 V, and has a maximum transfer frequency of 10 MHz.