Yasunao Kuroda

Two-Phase Drive Self-Scanning Light-Emitting Device (SLED) Using Coupling Diodes

The self-scanning light-emitting device (SLED) is expected to become a new key device for two-dimensional optical information processing, because the light-emitting ON-states of the SLED are automatically transferred by input clock pulses, and the optical pulses can start the transfer action from any elements. It will be important to decrease the number of transfer clock lines in order to realize the highly packed two-dimensional integrated SLED. Therefore, we propose the two-phase drive SLED using coupling diodes and demonstrate its operation. It has a wide operating margin as well as 10 MHz as the maximum transfer frequency.

Integrated self-scanning light-emitting device (SLED)

The fabrication of monolithically integrated self-scanning light-emitting device (SLED) on a GaAs substrate and its performance are described. The SLED consists of integrated light-emitting thyristors whose turn-on voltages interact with each other through coupling diodes or resistors. Light-emitting states are automatically transferred by input clock pulses without using external shift registers. The resistors are made of a Cr-SiO cermet film, and the coupling diodes are made in part with p-n layers of thyristors. The integrated SLED is fabricated in eight photolithographic steps. High-speed operation, more than 10 MHz, can be achieved due to its simple structure and high-density packaging. It is expected that this SLED will be a key device in future large-scale optoelectronic integrated circuits. >

Proposal of Integrated Light Emitting Device Array with Shift Register

We propose two types of new integrated light-emitting device arrays with a shift register for the photo-printer head. The proposed device arrays consist of a self-scanning light-emitting device (SLED) as a shift register and light-emitting thyristors for printing. One of the proposed device arrays, which has 12 bits and a 62.5-µm-pitch thyristor array, was fabricated and demonstrated. It has a wide operating margin of about 2 V, and has a maximum transfer frequency of 10 MHz.

AlGaAs Grating Surface-Emitting Beam Deflector for a 1 × N Space-Division Optical Switch

A new type of beam deflector for a 1 × N space-division optical switch has been fabricated. The deflection is controlled by a carrier induced refractive index change of the semiconductor waveguide. The deflected beam is emitted normally with a grating coupler. The maximum number of resolvable spots is 10 for an injection current of about 630 mA.