Norbert Jahr

Optical Properties of Individual Silicon Nanowires for Photonic Devices

Silicon is a high refractive index material. Consequently, silicon nanowires (SiNWs) with diameters on the order of the wavelengths of visible light show strong resonant field enhancement of the incident light, so this type of nanomaterial is a good candidate for all kinds of photonic devices. Surprisingly enough, a thorough experimental and theoretical analysis of both the polarization dependence of the absorption and the scattering behavior of individual SiNWs under defined illumination has not been presented yet. Here, the present paper will contribute by showing optical properties such as scattering and absorption of individual SiNWs experimentally in an optical microscope using bright- and dark-field illumination modes as well as in analytical Mie calculations. Experimental and calculation results are in good agreement, and both reveal a strong correlation of the optical properties of individual SiNWs to their diameters. This finding supports the notion that SiNWs can be used in photonic applications such as for photovoltaics or optical sensors.

Molecular plasmonics: light meets molecules at the nanoscale.

Certain metal nanoparticles exhibit the effect of localized surface plasmon resonance when interacting with light, based on collective oscillations of their conduction electrons. The interaction of this effect with molecules is of great interest for a variety of research disciplines, both in optics and in the life sciences. This paper attempts to describe and structure this emerging field of molecular plasmonics, situated between the molecular world and plasmonic effects in metal nanostructures, and demonstrates the potential of these developments for a variety of applications.

A precise optical determination of nanoscale diameters of semiconductor nanowires

Electrical and optical properties of semiconducting nanowires (NWs) strongly depend on their diameters. Therefore, a precise knowledge of their diameters is essential for any kind of device integration. Here, we present an optical method based on dark field optical microscopy to easily determine the diameters of individual NWs with an accuracy of a few nanometers and thus a relative error of less than 10%. The underlying physical principle of this method is that strong Mie resonances dominate the optical scattering spectra of most semiconducting NWs and can thus be exploited. The feasibility of this method is demonstrated using GaAs NWs but it should be applicable to most types of semiconducting NWs as well. Dark field optical microscopy shows that even slight tapering of the NWs, i.e. diameter variations of a few nanometers, can be detected by a visible color change. Abrupt diameter changes of a few nanometers, as they occur for example when growth conditions vary, can be determined as well. In addition a profound analysis of the elastic scattering properties of individual GaAs NWs is presented theoretically using Mie calculations as well as experimentally by dark field microscopy. This method has the advantage that no vacuum technique is needed, a fast and reliable analysis is possible based on cheap standard hardware.

The invention of immersion ultramicroscopy in 1912-the birth of nanotechnology?

Dawn of nanotechnology: the immersion ultramicroscope was patented a century ago. When an analyte was examined with an antique instrument and with state-of-the-art technology, the historic assumptions were confirmed: the size and shape of the nanoparticles are in the same range as that described 100 years ago. The spectra of the Tyndall cones caused by the shape of the nanoparticles were also described correctly-long before electron microscopy was able to image single nanoparticles.

Applying contact to individual silicon nanowires using a dielectrophoresis (DEP)-based technique

One major challenge for the technological use of nanostructures is the control of their electrical and optoelectronic properties. For that purpose, extensive research into the electrical characterization and therefore a fast and reliable way of contacting these structures are needed. Here, we report on a new, dielectrophoresis (DEP)-based technique, which enables to apply sufficient and reliable contact to individual nanostructures, like semiconducting nanowires (NW), easily and without the need for lithography. The DEP contacting technique presented in this article can be done without high-tech equipment and monitored in situ with an optical microscope. In the presented experiments, individual SiNWs are trapped and subsequently welded between two photolithographically pre-patterned electrodes by applying varying AC voltages to the electrodes. To proof the quality of these contacts, I–V curves, photoresponse and photoconductivity of a single SiNW were measured. Furthermore, the measured photoconductivity in dependence on the wavelength of illuminated light and was compared with calculations predicting the absorption spectra of an individual SiNW.

Hyperspectral imaging of plasmon resonances in metallic nanoparticles.

The spectroscopy of metal nanoparticles shows great potential for label-free sensing. In this article we present a hyper-spectral imaging system combined with a microfluidic system, which allows full spectroscopic characterization of many individual nanoparticles simultaneously (>50 particles). With such a system we were able overcome several limitations that are present in LSPR sensing with nanoparticle ensemble. We experimentally quantified (incorporating atomic force microscopy as well) the correlation between geometry, position of plasmon resonance (λPeak) and sensitivity of the particles (Sb=1.63λPeak-812.47[nm/RIU]). We were able to follow the adsorption of protein layers and determined their spatial inhomogeneity with the help of the hyperspectral imaging.

Bioanalytics using single plasmonic nanostructures

Plasmonic nanostructures promise to provide sensing capabilities with the potential for sensitive and robust assays in a high parallelization. We present here the use of individual nanostructures for the detection and manipulation of biomolecules such as DNA based on optical approaches [1]. The change in localized surface plasmon resonance of individual metal nanoparticles is utilized to monitor the binding of DNA directly or via DNA-DNA interaction. The influence of different size (length) as well as position (distance to the particle surface) is thereby studied [2]. Holes in a Cr layer present another interesting approach for bioanalytics. They are used to detect plasmonic nanoparticles as labels or to sense the binding of DNA on these particles. This hybrid system of hole and particle allows for simple (just using RGB-signals of a CCD [3]) but a highly sensitive (one nanoparticle sensitivity) detection. On the other hand, the binding of molecular layers around the particles can be detected using spectroscopic features of just an individual one of these systems. Besides sensing, individual plasmonic nanostructures can be also used to manipulate single biomolecular structures such as DNA. Attached particles can be used for local destruction [4] or cutting as well as coupling of energy into (and guiding along) the molecular structure [5].

Optical single-particle detection in nanoholes towards simple parallel detection of molecular binding events

A novel scheme for the optical detection of a few or even single gold nanoparticle labels is introduced. It utilizes sub-wavelength holes in a chromium layer on a glass substrate, where a bioaffinity reaction could take place and the outcome (regarding particle label binding) can be monitored using optical means. Experiments in combination with simulations demonstrate that the presence of particles in such a chromium hole can be simply detected by using the color information of images by a charge couple device (CCD) camera without the need for additional spectroscopy setups. The presence of gold nanoparticles leads to a detectable red-shift in the images of the respective nanohole, which is the sensing principle of the sensor.

Dielectrophoresis based integration of nanostructures and their sensorial application

Here we present a technique to integrate bottom-up nanostructures for optoelectronic and chemoresistive sensing using an AC electrical field. The work focuses mainly on two types of nanostructured materials: gold nanoparticle and silicon nanowire. In terms of electrical microintegration of these structures, it is especially important to apply a reliable electrical contact with low contact-resistance, in order to be able to use them as optoelectronic or chemo resistive sensors. To achieve this, a micro integration process was developed to achieve this goal. The contacted nanostructures were characterized electrically to optimize the integration procedure and acquire best possible sensing capabilities. Silicon nanowires were demonstrated to work as wavelength sensitive optical sensors and gold nanoparticle as marker free chemo resistive sensor.

Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires

Silicon nanowires (SiNWs) show strong resonant wavelength enhancement in terms of absorption as well as scattering of light. However, in most optoelectronic device concepts the SiNWs should be surrounded by a contact layer. Ideally, such a layer can also act as an index matching layer which could nearly halve the strong reflectance of light by silicon. Our results show that this reduction can be overcome at the nanometer scale, i.e. SiNWs embedded in a silica (SiO x ) layer can not only maintain their high scattering cross sections but also their strong polarization dependent scattering. Such effects can be useful for light harvesting or optoelectronic applications. Moreover, we show that it is possible to optically determine the diameters of the embedded nanoscale silicon (Si) cores.