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Dive into the research topics where Noriyuki Yoshikawa is active.

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Featured researches published by Noriyuki Yoshikawa.


IEEE Control Systems Magazine | 1994

A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones

Satoshi Makioka; Kazuki Tateoka; Masaaki Yuri; Noriyuki Yoshikawa; Kunihiko Kanazawa

A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P/sub 1dB/ of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the MCM structure and on-chip ferroelectric capacitors has successfully reduced the GaAs total chip area to be 1.1 mm/sup 2/.<<ETX>>


international microwave symposium | 1994

A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems

Kazuki Tateoka; Akihisa Sugimura; Hidetoshi Furukawa; Masaaki Yuri; Noriyuki Yoshikawa; Kunihiko Kanazawa

Extremely small GaAs PA has been implemented using the AlN multilayer MCM for 0.9 GHz digital cellular phones. The present PA exhibited the efficiency of 49% with drain supply voltage as low as 3.6 V. The PA was designed to provide the matching circuits with the maximum gain at the input and the minimum intermodulation distortion at the output.<<ETX>>


IEEE Control Systems Magazine | 1996

A miniaturized GaAs power amplifier for 1.5 GHz digital cellular phones

Satoshi Makioka; S. Enomoto; H. Furukawa; Kazuki Tateoka; Noriyuki Yoshikawa; Kunihiko Kanazawa

An extremely miniaturized GaAs PA has been developed for the application in 1.5-GHz Japanese digital cellular phones. By using MuMIC (i.e. multilayer microwave integrated circuit) technology, the half sized (0.2 cc) PA with 1.1 W output power has successfully been implemented. The 48-% power-added efficiency has been obtained with drain supply voltage of 3.5-V.


Archive | 2002

High-frequency module and method for manufacturing the same

Hideki Takehara; Noriyuki Yoshikawa; Kunihiko Kanazawa


Archive | 1996

High-frequency integrated circuit device having a multilayer structure

Noriyuki Yoshikawa; Kunihiko Kanazawa; Satoshi Makioka; Kazuki Tateoka


Archive | 1996

RF power amplifying circuit device

Noriyuki Yoshikawa; Kazuki Tateoka; Akihisa Sugimura; Kunihiko Kanazawa


Archive | 2001

HIGH FREQUENCY SEMICONDUCTOR

Kunihiko Kanazawa; Seiichi Nakatani; Hideki Takehara; Noriyuki Yoshikawa; 誠一 中谷; 則之 吉川; 秀樹 竹原; 邦彦 金澤


Archive | 1996

High frequency integrated circuit device and manufacture thereof

則之 ▲吉▼川; Kunihiko Kanazawa; Toshifumi Makioka; Kazuki Tatsuoka; Noriyuki Yoshikawa; 敏史 牧岡; 一樹 立岡; 邦彦 金澤


Archive | 2008

Optical device and manufacturing method thereof

Masanori Minamio; Hiroyuki Ishida; Noriyuki Yoshikawa


Archive | 2008

Optical device for reducing disturbance light and manufacturing method thereof

Masanori Minamio; Hiroyuki Ishida; Noriyuki Yoshikawa

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