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Dive into the research topics where Norman E. Abt is active.

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Featured researches published by Norman E. Abt.


IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control | 1991

Electrical and reliability properties of PZT thin films for ULSI DRAM applications

John Carrano; C. Sudhama; Vinay Chikarmane; Jack C. Lee; A. Tasch; William H. Shepherd; Norman E. Abt

The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode materials, film thicknesses (200 nm to 600 nm) and capacitor areas were used. A large stored-energy density (Q/sub c/) of 15 mu C/cm/sup 2/ (at 125 kV/cm) was measured using different methods. The results indicate that PZT thin films exhibit material properties which might satisfy the requirements of ULSI DRAMs.<<ETX>>


international reliability physics symposium | 1992

Thermal stability of ferroelectric memories

Anne K. Gregory; Rodolfo Zucca; Shi-Qing Wang; Michael P. Brassington; Norman E. Abt

The authors review the latest fatigue and aging data on ferroelectric memory products and discuss thermal characteristics which limit the nonvolatile data retention storage temperature. They evaluate the effects of thermal excursions on the remanent polarization level in polycrystalline films. An excursion to an elevated temperature has been found to cause a reduction in retained polarization. The reduction is a function of the maximum temperature difference. The loss in capacitor polarization imposes constraints on the design of reliable integrated ferroelectric nonvolatile memory devices.<<ETX>>


Integrated Ferroelectrics | 1994

High frequency fatiguing of ferroelectric capacitors

Norman E. Abt; Petar Misic; David Zehngut; Edward Regan

Abstract Ferroelectric memories which use destructive readout require a rewrite after a read. For such memories every data access adds one cycle of fatigue to the capacitor. High frequency cycling is then required to demonstrate the long term fatigue effects and determine reliability of these memories. To avoid noise and get clean measures of remanent polarization large capacitors are used. Unfortunately, these also present a large capacitive load and attempts to perform high speed cycling are limited by the typically low current drive capabilities of pulse generators. This results in most of the applied voltage being dropped across the output impedance of the driver. In this paper we will describe an exerciser specifically designed to drive multiple ferroelectric capacitors at 6 Mhz. With this system we have measured fatigue characteristics beyond 1013 cycles on 100 × 100 and 20 × 20 μm2 capacitors.


Archive | 1990

Sense amplifier and method for ferroelectric memory

James M. Jaffe; Norman E. Abt


Archive | 1992

Method for forming a ceramic oxide capacitor having barrier layers

Norman E. Abt; Reza Moazzami; Yoav Nissan-Cohen


Archive | 1992

Screening processes for ferroelectric memory devices

Anne K. Gregory; Michael P. Brassington; Shi-Qing Wang; Norman E. Abt


Archive | 1989

Method for plasma etching tapered and stepped vias

David Wington Cheung; Norman E. Abt; Peter A. Mcnally


MRS Proceedings | 1990

Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors

C. Sudhama; J. C. Carrano; L. H. Parker; Vinay Chikarmane; J. C. Lee; A. Tasch; W. Miller; Norman E. Abt; W. H. Shepherd


Archive | 1991

Ferroelectric random access memory and methods of its operation

James M. Jaffe; Norman E. Abt


Archive | 1995

High density electrical ceramic oxide capacitor

Norman E. Abt; Reza Moazzami; Yoav Nissan-Cohen

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A. Tasch

University of Texas at Austin

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C. Sudhama

University of Texas at Austin

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Vinay Chikarmane

University of Texas at Austin

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