Oney Soykal

Spin coherence and echo modulation of the silicon vacancy in4H−SiCat room temperature

The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an ensemble of vacancies and find the properties depend strongly on magnetic field. The spin echo decay time varies from less than 10

Silicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces

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Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

s at low fields to 80

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide.

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Optical Properties of Single Silicon Vacancies in 4H-SiC

s at 68 mT, and a strong field-dependent spin echo modulation is also observed. The modulation is attributed to the interaction with nuclear spins and is well-described by a theoretical model.

Resonant excitation of a single dichroic vacancy spin in silicon carbide

Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this materials properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively charged silicon vacancy defect in hexagonal silicon carbide via use of group theory and density functional theory and find the effects of spin-orbit and spin-spin interactions on these states. Although we focused on

Optical, Spin, and Vibronic Properties of the Silicon Vacancy Defects in Silicon Carbide: Robust Spin-Photon Interfaces

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Electrical and mechanical tuning of a silicon vacancy defect in SiC for quantum information technology

in 4H-SiC, because of its unique fine structure due to odd number of active electrons, our methods can be easily applied to other defect centers of different polytpes, especially to the 6H-SiC. Based on these results we identify the mechanism that polarizes the spin under optical drive, obtain the ordering of its dark doublet states, point out a path for electric field or strain sensing, and find the theoretical value of its ground-state zero field splitting to be 68 MHz, in good agreement with experiment. Moreover, we present two distinct protocols of a spin-photon interface based on this defect. Our results pave the way toward novel quantum information and quantum metrology applications with silicon carbide.