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SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation | 1995

Monolithic uncooled infrared image sensor with 160 by 120 pixels

Masashi Ueno; Osamu Kaneda; Tomohiro Ishikawa; Kouichi Yamada; Akira Yamada; Masafumi Kimata; Masahiro Nunoshita

This paper presents the key design features of an uncooled infrared image sensor with 160 by 120 pixels. This sensor has a monolithic structure using micromachining technology. These features concern the configuration of the readout circuit, the structure of the infrared detector, and the thermal isolation structure in a pixel. The first feature is a simple readout circuit that includes neither an amplifier nor a switching transistor in the pixel. The second feature is the use of a thin film resistive bolometer made of polysilicon as the infrared detector. The detector has a P+-P--N+ diode structure which operates as a bolometer and cuts off current passes through non-selected pixels. The forward resistance of the diode can be tailored by adjusting the shape and impurity concentration of the P- region. Finally, a microbridge structure for the thermal isolation is made in each pixel by using the micromachining technology. The bolometer is monolithically integrated on this structure. Since polysilicon is generally used in the conventional Si-LSI process, this choice of detector material makes it possible to manufacture the image sensor using only current Si-LSI facilities, and realize a low cost uncooled infrared camera.


Proceedings of SPIE | 1996

Performance of new handheld IR camera using uncooled bolometer FPA

Takanori Sone; Norio Ohkawa; Yasuo Kawashima; Yasuji Matsui; Yosuke Sugiura; Tomiharu Araki; Makoto Kamozawa; Masashi Ueno; Osamu Kaneda; Tomohiro Ishikawa; Hisatoshi Hata; Kazuo Hashima; Yoshiyuki Nakagi; Akira Yamada; Masafumi Kimata

A camera using an uncooled infrared image sensor has been developed. This image sensor is a bolometer focal plane array (FPA), of which the readout circuit is designed to minimize the temperature drift or the pattern noise caused by the changes of the ambient temperature. The circuit has a bolometer for the load resistor, which has the same temperature coefficient of resistance as that of the pixel bolometer. Therefore the signal change induced by the temperature change of the FPA substrate is reduced because the resistance change of the load bolometer compensates for that of the pixel bolometer. The effectiveness of the drift- compensating circuit has been confirmed with a prototype handheld camera.


Archive | 1995

Infrared detector and manufacture thereof, and etching monitor for manufacturing the infrared detector

Tomohiro Ishikawa; Osamu Kaneda; Junji Nakanishi; 淳治 中西; 修 兼田; 智広 石川


Archive | 2002

Bolometric infrared detector and its manufacturing method

Osamu Kaneda; Yoshiyuki Nakagi; 義幸 中木; 修 兼田


Archive | 2001

Infrared ray detection array and manufacturing method thereof

Osamu Kaneda; Takanori Sone; 修 兼田; 孝典 曽根


Sensors and Materials | 2000

YBaCuO uncooled microbolometer IRFPA

Hideo Wada; Takanori Sone; Hisatoshi Hata; Yoshiyuki Nakaki; Osamu Kaneda; Yasuaki Ohta; Masashi Ueno; Masafumi Kimata


Archive | 1995

INFRARED DETECTING ELEMENT AND MANUFACTURE THEREOF

Tomohiro Ishikawa; Osamu Kaneda; Masafumi Ueno; 雅史 上野; 修 兼田; 智宏 石川


Archive | 1995

Infrared-Rays Sensor and Manufacturing Method Therefor

Tomohiro Ishikawa; Masashi Ueno; Osamu Kaneda


The Japan Society of Applied Physics | 2001

Uncooled Infrared Focal Plane Arrays Using Micromachining Technology

Masafumi Kimata; Tomohiro Ishikawa; Yoshiyuki Nakaki; Masashi Ueno; Hirofumi Yagi; Hisatoshi Hata; Osamu Kaneda; Takanori Sone


Archive | 1996

Infrarot-Bildaufnahmevorrichtung Infrared image pickup device

Norio Ookawa; Susumu Takahashi; Masashi Ueno; Osamu Kaneda

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