Ovidiu D. Gordan

Photoluminescence emission and Raman response of monolayer MoS 2 , MoSe 2 , and WSe 2

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

Enhancement of the thermoelectric properties of PEDOT:PSS thin films by post-treatment

In this work, the thermoelectric (TE) properties of poly(3,4-ethylenedioxylthiophene):poly(styrene sulfonate) (PEDOT:PSS) thin films at room temperature are studied. Different methods have been applied for tuning the TE properties: 1st addition of polar solvent, dimethyl sulfoxide (DMSO), into the PEDOT:PSS solution; 2nd post-treatment of thin films with a mixture of DMSO and ionic liquid, 1-ethyl-3-methylimidazolium tetrafluoroborate (EMIMBF4). It is verified that DMSO post-treatment is more efficient than DMSO addition in improving the electrical conductivity with a trivial change in the Seebeck coefficient. The power factor is increased up to 30.1 μW mK−2 for the film with DMSO post-treatment, while the optimized power factor by DMSO addition is 18.2 μW mK−2. It is shown that both DMSO addition and post-treatment induce morphological changes: an interconnected network of elongated PEDOT grains is generated, leading to higher electrical conductivity. In contrast, for those films post-treated in the presence of EMIMBF4, an interconnected network of short and circular PEDOT grains with increased polaron density is created, resulting in the improvement in the Seebeck coefficient and a concomitant compromise in the electrical conductivity. An optimized power factor of 38.46 μW mK−2 is achieved at 50 vol% of EMIMBF4, which is the highest reported so far for PEDOT:PSS thin films to our knowledge. Assuming a thermal conductivity of 0.17 W mK−1, the corresponding ZT is 0.068 at 300 K. These results demonstrate that post-treatment is a promising approach to enhance the TE properties of PEDOT:PSS thin films. Furthermore, ionic liquid, EMIMBF4, shows the potential for tuning the TE properties of PEDOT:PSS thin films via a more environmentally benign process.

Compact metal probes: a solution for atomic force microscopy based tip-enhanced Raman spectroscopy.

There are many challenges in accomplishing tip-enhanced Raman spectroscopy (TERS) and obtaining a proper tip is probably the greatest one. Since tip size, composition, and geometry are the ultimate parameters that determine enhancement of intensity and lateral resolution, the tip becomes the most critical component in a TERS experiment. However, since the discovery of TERS the cantilevers used in atomic force microscopy (AFM) have remained basically the same: commercial silicon (or silicon nitride) tips covered by a metallic coating. The main issues of using metal-coated silicon cantilevers, such as wearing off of the metal layer or increased tip radius, can be completely overcome by using all-metal cantilevers. Until now in TERS experiments such probes have only been used in a scanning tunneling microscope or in a tuning fork-based shear force microscope but not in AFM. In this work for the first time, we show the use of compact silver cantilevers that are fully compatible with contact and tapping modes in AFM demonstrating their superb performance in TERS experiments.

Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered.

Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin films

Thin films of perfluorinated vanadyl phthalocyanine F 16 PcVO were prepared by physical vapor deposition in high vacuum on KBr and fused silica substrates. The absorption spectra in the visible region show that the films on different substrates have different structure. The optical constants for F 16 PcVO films were obtained in the spectral range of 0.7–4.5 eV from the simulation of ellipsometry spectra with an anisotropic uniaxial model. From the difference between the in-plane and out-of-plane components of the extinction coefficient the average tilt angle of the F 16 PcVO molecular planes with respect to the substrate plane was found to be 56° for fused silica substrates and between 0° and 3° for KBr substrates.

Enhanced field emission from cerium hexaboride coated multiwalled carbon nanotube composite films: A potential material for next generation electron sources

Intensified field emission (FE) current from temporally stable cerium hexaboride (CeB6) coated carbon nanotubes (CNTs) on Si substrate is reported aiming to propose the new composite material as a potential candidate for future generation electron sources. The film was synthesized by a combination of chemical and physical deposition processes. A remarkable increase in maximum current density, field enhancement factor, and a reduction in turn-on field and threshold field with comparable temporal current stability are observed in CeB6-coated CNT film when compared to pristine CeB6 film. The elemental composition and surface morphology of the films, as examined by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray measurements, show decoration of CeB6 nanoparticles on top and walls of CNTs. Chemical functionalization of CNTs by the incorporation of CeB6 nanoparticles is evident by a remarkable increase in intensity of the 2D band in Raman spectrum of coated films as c...

Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing

Zinc oxide thin film is one of the most promising candidates for the transparent conductive layer in microelectronic and photovoltaic applications, due to its low resistivity and high transmittance in the visible spectral range. In this letter, we present optoelectronic and structural properties of fluorine doped ZnO films deposited at low temperature on a silicon substrate. The fluorine doping was made by post-deposition SF6 plasma treatment and activation by the millisecond range flash lamp annealing. Both the microstructural and optical investigations confirm the formation of a high-quality, highly doped n-type ZnO layer. The current-voltage characteristics show a heterojunction between n+-ZnO and Si. Moreover, it is shown that the SF6 plasma treatment efficiently passivates the surface state and bulk defects in the ZnO film.

Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes

Large arrays of multifunctional rolled-up semiconductors can be mass-produced with precisely controlled size and composition, making them of great technological interest for micro- and nano-scale device fabrication. The microtube behavior at different temperatures is a key factor towards further engineering their functionality, as well as for characterizing strain, defects, and temperature-dependent properties of the structures. For this purpose, we probe optical phonons of GaAs/InGaAs rolled-up microtubes using Raman spectroscopy on defect-rich (faulty) and defect-free microtubes. The microtubes are fabricated by selectively etching an AlAs sacrificial layer in order to release the strained InGaAs/GaAs bilayer, all grown by molecular beam epitaxy. Pristine microtubes show homogeneity of the GaAs and InGaAs peak positions and intensities along the tube, which indicates a defect-free rolling up process, while for a cone-like microtube, a downward shift of the GaAs LO phonon peak along the cone is observed. Formation of other type of defects, including partially unfolded microtubes, can also be related to a high Raman intensity of the TO phonon in GaAs. We argue that the appearance of the TO phonon mode is a consequence of further relaxation of the selection rules due to the defects on the tubes, which makes this phonon useful for failure detection/prediction in such rolled up systems. In order to systematically characterize the temperature stability of the rolled up microtubes, Raman spectra were acquired as a function of sample temperature up to 300°C. The reversibility of the changes in the Raman spectra of the tubes within this temperature range is demonstrated.

Carbon p electron ferromagnetism in silicon carbide

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

Influence of film thickness and air exposure on the transport gap of manganese phthalocyanine

The interface formation between manganese phthalocyanine (MnPc) and cobalt was investigated combining ultraviolet photoelectron spectroscopy and inverse photoelectron spectroscopy. The transport band gap of the MnPc increases with the film thickness up to a value of (1.2 ± 0.3) eV while the optical band gap as determined from spectroscopic ellipsometry amounts to 0.5 eV. The gap values are smaller compared to other phthalocyanines due to metallic Mn 3d states close to the Fermi level. The transport band gap was found to open upon air exposure as a result of the disappearance of the occupied 3d electronic states.