P. Hirtz

Spectroscopy of the deep levels in tin-doped Ga-Al-As

Abstract We have carried out spectroscopic studies on heavily tin-doped and non- intentionally doped Ga1−xAlxAs layer Schottky barriers (0.2 ⩽ x ⩽ 0.37) by the analysis of their capacitance or current transient responses. In such layers, two levels are systematically observed although they are not detected in the absence of tin. The concentration of deep levels relative to the two levels studied seems to correlate well with the quantity of tin introduced during the growth by liquid phase epitaxy. They present features similar to the so-called DX deep centres (association of a donor centre with an unknown defect). Specifically, the capture and emission of electron by such centres require an activation energy to enable the carriers to surmount the potential barrier, the height of which we have determined for various cases.

High yield manufacture of very low threshold, high reliability, 1.30-µm buried heterostructure laser diodes grown by metal organic chemical vapor deposition

We report the fabrication of very low threshold buried heterostructure lasers by a two-step MOCVD technique. We show very high yield of fabrication, very high uniformity of the initial characteristics, good reproducibility, and low degradation rate during the aging test.

Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications

Microwave impedance matching networks have been, for the first time, monolithically integrated with GaInAs p-i-n photodiodes and GaInAsP buried ridge stripe structure lasers ( lambda =1.3 mu m), both on a semi-insulating InP substrate. The microwave power transfer optical links were compared using matched and unmatched devices. Compared to an unmatched link, an improvement of 11.4 dB at 5.6 GHz (600 MHz bandwidth) is obtained for the totally matched one; this result corresponds quite well to the theoretical prediction (12 dB at 6 GHz).<<ETX>>

Reactively matched optoelectronic transceivers on InP substrate for 6 GHz operation

The monolithic integration of optoelectronic devices with microwave impedance matching networks is presented. These are a GaInAs photodiodes and a GaInAsP buried ridge stripe structure laser emitting at 1.3 mu m; both are fabricated on semi-insulating InP substrate. The matching networks, consisting of reactive components, have been designed to match these devices to 50 Omega at 6 GHz with a bandwidth close to 10%. Compared to an unmatched link, an improvement of 12 dB at 6 GHz is theoretically obtained; experimentally, it has been measured to 11.4 dB at 5.6 GHz.<<ETX>>

A low‐beam‐divergence cw (GaAl)As double‐heterostructure laser grown by low‐pressure metallorganic chemical vapor deposition process

We report the operation of a new stripe geometry (GaAl)As double‐heterostructure laser, grown by low‐pressure metallorganic vapor deposition (MO‐CVD). Several points make this MO‐CVD laser very suitable for optical communication: (i) a very low beam divergence in the direction perpendicular to the junction plane, 26 °; (ii) a low pulsed threshold current, 80 mA (stripe geometry: 5×300 μm); (iii) an emission wavelength of 8300 A (optimum for optical fiber transmission).

Comment on “miscibility gaps in quaternary III/V alloys”

Abstract Recently, Stringfellow [J. Crystal Growth 58 (1982) 194] questioned the consistency of our DLP calculation. We show that our calculation is, in fact, consistent with the DLP model.