R. Blondeau

First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate

We report the first successful room‐temperature cw operations of a Ga0.25 In0.75 As0.5 P0.5 ‐InP buried ridge structure laser emitting at 1.3 μm grown by two‐step low‐pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).

An all-optical wavelength-converter with semiconductor optical amplifiers monolithically integrated in an asymmetric passive Mach-Zehnder interferometer

An all-optical wavelength-converter based on monolithic integration of a Mach-Zehnder interferometer and integrated semiconductor optical amplifiers was demonstrated. This device exhibited high stability, penalty-free conversion at 5 Gbit/s (at a BER of 10/sup 9/), no-excess penalty after a transmission over 60 km on standard fiber, and low signal-polarization dependency. The device operated in a 26-nm-wide optical window.<<ETX>>

Wavelength conversion by optimized monolithic integrated Mach-Zehnder interferometer

Semiconductor optical amplifiers have been monolithic integrated in a passive symmetric Mach-Zehnder interferometer to form a compact polarization insensitive all-optical wavelength converter operating at up to 10 Gb/s. A simple method for reducing the impact of input power variations is proposed that increases the input power dynamic range from 4-8 dB.

First room‐temperature cw operation of a GaInAsP/InP light‐emitting diode on a silicon substrate

We report in this letter the first successful fabrication of an InP‐GaInAsP light‐emitting diode, emitting at 1.15 μm grown by low‐pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.

Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition

GaInAsP‐InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink‐free) light‐current characteristics up to high powers (10 mW/facets), and can be operated at high temperatures (70 °C). Excellent uniformity over 10 cm2 has been obtained, and an external quantum efficiency of 60% for two faces has been measured.

cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition

Continuous wave operation of 1.57‐μm distributed feedback lasers fabricated on material grown by two‐step low‐pressure metalorganic chemical vapor deposition growth process is reported for the first time. Room‐temperature continuous wave threshold currents as low as 60 mA have been measured for devices with cavity length of 300 μm and stripe width of 5 μm. Single longitudinal mode operation at fixed mode was obtained under the continuous wave condition, in the temperature range 9–90 °C, with the wavelength shift of 0.9 A/°C. A stop band of 25 A in which no resonance mode emission existed, was observed in the output spectrum of the distributed feedback laser.

Abrupt OMVPE grown GaAs/GaAlAs heterojunctions

In this paper, we describe the growth of abrupt heterojunctions and very thin GaAs and GaAlAs layers for use in quantum well lasers or TEGFET (two-dimensional electron-gas field effect transistors) structures. SIMS measurements have been performed which confirm that the growth rate measured for thick layers (1 to 10 μm) can be used to estimate the thickness of very thin layers (<100 A) with a good accuracy. Luminescence data from GaAlAs/GaAs/GaAlAs quantum wells shows that there is probably some random compositional fluctuation in the GaAlAs quantum well barrier layers which leads to a broadening of the luminescence peak and a shift to lower energy. These quantum wells form the active layer of separate confinement heterostructure (SCH) and graded refractive index (GRIN) SCH quantum well laser structures. We will review the results of our study of these lasers explaining the separate roles of the GRIN and quantum well. New results will be given showing how the value of T0 can be improved by increasing, the number of quantum wells in the active layer.

cw phase‐locked array Ga0.25In0.75As0.5P0.5‐InP high power semiconductor laser grown by low‐pressure metalorganic chemical vapor deposition

Continuous and pulsed phase‐locked operation of a high power GaInAsP‐InP semiconductor laser emitting at 1.3 μm has been achieved. The laser consists of a seven‐striped array of ridge‐island lasers fabricated by a two‐step low‐pressure metalorganic chemical vapor deposition growth technique. Linear output powers greater than 300 mW (pulsed) and 120 mW (cw) have been obtained with no facet coatings. The far‐field full widths at half power, both parallel and perpendicular to the junction plane, were 3° and 45°, respectively, at 10 mW (at 20 °C) which is evidence for strong stripe‐to‐stripe coupling.

Spectroscopy of the deep levels in tin-doped Ga-Al-As

Abstract We have carried out spectroscopic studies on heavily tin-doped and non- intentionally doped Ga1−xAlxAs layer Schottky barriers (0.2 ⩽ x ⩽ 0.37) by the analysis of their capacitance or current transient responses. In such layers, two levels are systematically observed although they are not detected in the absence of tin. The concentration of deep levels relative to the two levels studied seems to correlate well with the quantity of tin introduced during the growth by liquid phase epitaxy. They present features similar to the so-called DX deep centres (association of a donor centre with an unknown defect). Specifically, the capture and emission of electron by such centres require an activation energy to enable the carriers to surmount the potential barrier, the height of which we have determined for various cases.

High yield manufacture of very low threshold, high reliability, 1.30-&#181;m buried heterostructure laser diodes grown by metal organic chemical vapor deposition

We report the fabrication of very low threshold buried heterostructure lasers by a two-step MOCVD technique. We show very high yield of fabrication, very high uniformity of the initial characteristics, good reproducibility, and low degradation rate during the aging test.