P. Klason

Identification of oxygen and zinc vacancy optical signals in ZnO

Photoluminescence spectroscopy has been used to study single crystalline ZnO samples systematically annealed in inert, Zn-rich and O-rich atmospheres. A striking correlation is observed between the choice of annealing ambient and the position of the deep band emission (DBE) often detected in ZnO. In particular, annealing in O2 results in a DBE at 2.35±0.05eV, whereas annealing in the presence of metallic Zn results in DBE at 2.53±0.05eV. The authors attribute the former band to zinc vacancy (VZn) related defects and the latter to oxygen vacancy (VO) related defects. Additional confirmation for the VO and VZn peak identification comes from the observation that the effect is reversible when O- and Zn-rich annealing conditions are switched. After annealing in the presence of ZnO powder, there is no indication for the VZn- or VO-related bands, but the authors observe a low intensity yellow luminescence band peaking at 2.17eV, probably related to Li, a common impurity in hydrothermally grown ZnO.

Deep-level emissions influenced by O and Zn implantations in ZnO

A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1x10(17)/cm(3) and 5x10(1 ...

Buckling of ZnO nanowires under uniaxial compression

Instability and buckling characterization of vertical well aligned single crystal of ZnO nanowires grown on SiC substrate was done quantitatively by nanoindentation technique. The critical load was ...

Zinc oxide nanorods grown on two-dimensional macroporous periodic structures and plane Si as a pH sensor

pH determination is a strong prerequisite for many biochemical and biological processes. We used two methods, namely, the electrochemical potential method (experimental) and site binding method (theoretical), to study the sensitivity of zinc oxide (ZnO) nanorods grown on two-dimensional macroporous periodic structures (2DMPPS) (p-and n-type) and plane n-type Si substrates for use as an intracellular pH sensing device. The dimension of these nanorods varied in radius between 50 and 300 nm and lengths of 1–10 μm. We found that the sensitivity of ZnO nanorods increases with reductions in size, from 35 mV/pH for D=300 nm and L=10 μm, to 58 mV/pH for D=50 nm and L=1 μm, using the site binding model. The experimental electrochemical potential difference for the ZnO nanorods working electrode versus Ag/AgCl reference electrode showed a high sensitivity range for ZnO nanorods grown on 2DMPPS n-Si substrate as compared to plane n-Si at room temperature for pH ranging from 4 to 12 in buffer and NaCl solutions.

Study of luminescent centers in ZnO nanorods catalytically grown on 4H-p-SiC

High-quality ZnO nanorods (NRs) were grown by the vapor–liquid–solid (VLS) technique on 4H-p-SiC substrates. Heterojunction light emitting diodes (LEDs) were fabricated. Electrical characterization including deep level transient spectroscopy (DLTS) complemented by photoluminescence (PL) is used to characterize the heterojunction LEDs. In contrast to previously published results on n-ZnO thin films on p-SiC, we found that the dominant emission is originating from the ZnO NRs. Three luminescence lines have been observed; these are associated with blue (465 nm) and violet (446 nm) emission lines from ZnO NRs emitted by direct transition/recombination of carriers from the conduction band to a zinc vacancy (VZn) radiative center and from a zinc interstitial (Zni) radiative center to the valance band. The third green-yellow (575 nm) spectral line is emitted due to a transition of carriers from Zni to VZn. The superposition of these lines led to the observation of strong white light which appears as a wide band in the room temperature PL.

Solid and soft nanostructured materials: Fundamentals and applications

The scientific work worldwide on nanostructured materials is extensive as well as the work on the applications of nanostructured materials. We will review quasi two-, one- and zero-dimensional solid and soft materials and their applications. We will restrict ourselves to a few examples from partly fundamental aspects and partly from application aspects. We will start with trapping of excitons in semiconductor nanostructures. The subjects are: physical realizations, phase diagrams, traps, local density approximations, and mesoscopic condensates. From these fundamental questions in solid nanomaterials we will move to trapping of molecules in water using nanostructured electrodes. We will also discuss how to manipulate water (create vortices) by nanostructure materials. The second part deals with nanorods (nano-wires). Particularly we will exemplify with ZnO nanorods. The reason for this is that ZnO has: a very strong excitons binding energy (60 meV) and strong photon-excitons coupling energy, a strong tendency to create nanostructures, and properties which make the material of interest for both optoelectronics and for medical applications. We start with the growth of crystalline ZnO nanorods on different substrates, both crystalline (silicon, silicon carbide, sapphire, etc) and amorphous substrates (silicon dioxide, plastic materials, etc) for temperatures from 50 degrees C up to 900 degrees C. The optical properties and crystalline properties of the nanorods will be analyzed. Applications from optoelectronics (lasers, LEDs, lamps, and detectors) are analyzed and also medical applications like photodynarnic cancer therapy are taken up. The third part deals with nano-particles in ZnO for sun screening. Skin cancer due to the exposure from the sun can be prevented by ZnO particles in a paste put on the exposed skin.

Bending flexibility, kinking, and buckling characterization of ZnO nanorods/nanowires grown on different substrates by high and low temperature methods

Nanomechanical tests of bending flexibility, kinking, and buckling failure characterization of vertically aligned single crystal ZnO nanorods/nanowires were performed quantitatively by nanoindentation technique. These nanostructures were grown by the vapor liquid solid (VLS) method, a relatively high temperature approach, and the aqueous chemical growth (ACG) method, a relatively low temperature approach on different substrates, including SiC and Si. The first critical load at the inflection point found for the ZnO nanorods/nanowires grown by ACG method was 105 μN on the SiC substrates and 114 μN on the Si substrates. The corresponding buckling energies calculated from the force-displacement curves were 3.15×10−12 and 2.337×10−12 J, respectively. Similarly, for the samples grown by the VLS method, the first critical load at the inflection point and the corresponding buckling energies were calculated from the force-displacement curves as 198 μN and 7.03×10−12 J on the SiC substrates, and 19 μN and 1.805×10...

Time-delayed transformation of defects in zinc oxide layers grown along the zinc-face using a hydrothermal technique

A study of deep level defects in a hydrothermally grown, intrinsically n-type zinc oxide (ZnO) device has been carried out using conventional deep level transient spectroscopy (DLTS). Performed und ...

Excitonic effects in ZnO nanowires and hollow nanotubes

Energy levels and wave functions of ground and excited states of an exciton are calculated by the method of imaginary time. Energy levels as functions of radius of single and double wall nanotube are studied. Asymptotic behavior of energy levels at large and small values of the radius using perturbation theory and adiabatic approximation is considered. Spatially indirect exciton in semiconductor nanowire is also investigated. Experimental result from high quality reproducible ZnO nanowires grown by low temperature chemical engineering is presented. State of the art high brightness white light emitting diodes (HB-LEDs) are demonstrated from the grown ZnO nano-wires. The color temperature and color rendering index (CRI) of the HB-LEDs values was found to be (3250 K, 82), and (14000 K, 93), for the best LEDs, which means that the quality of light is superior to one obtained from GaN LEDs available on the market today. The role of VZn and VO on the emission responsible for the white light band as well as the peak position of this important wide band is thoroughly investigated in a systematic way.

Synthesis and characterization of ZnO nanostructures grown on Si substrates

ZnO nanostructures were grown by thermal evaporation technique on (001) Si substrate and were characterized by photoluminescence measurements, scanning electron microscope and x-ray measurements. The results show that the formation of ZnO nanostructures is strongly influenced by the growth conditions. By optimizing the growth conditions, orientated ZnO nanorods with a diameter of around 300 nm and lengths of 20–35 μm have been achieved, and they show excellent optical properties. The laser action is observed at room temperature by using optical pumping.