P. M. Lukic

HEMT Carrier Mobility Analytical Model

In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.

Analytical model of a Si TFT with cylindrical source and drain

In this paper a new analytical model of a silicon thin film transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text, some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poissons equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.

TDOA approach for target localization based on improved genetic algorithm

This paper presents a target localization problem based on the time difference of arrival (TDOA) measurements by employing an improved genetic algorithm (GA) for estimation. The weighted least square (WLS) technique is applied as an efficient existing approach. The TDOA target localization problem is formulated as an optimization problem, with a highly nonlinear and multimodal objective function. The hybrid Genetic Algorithm — Newton-Raphson (GA-NR) has been proposed as high accuracy and global convergence algorithm in this sense. Finally, the simulation results of the proposed optimization method show a significant performance improvement over existing WLS approach.

Surrounding gate long channel nanowire MOSFET modelling—extended analysis

Based on the approximate solution of Poisson?s equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers? mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson?s equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.

Modeling and Investigation of SiGe Based MOSFET Structure Transport Characteristics

The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.

Conduction Mechanism Based Model of Organic Field Effect Transistor Structure

Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density μ(T,E,NT) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.

A New Threshold Voltage Analytical Model of Strained Si/SiGe MOSFET

In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model, simulations were performed. Obtained results are in very good agreement with the already known ones