Rajko M. Sasic

Analytical model of a Si TFT with cylindrical source and drain

In this paper a new analytical model of a silicon thin film transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text, some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poissons equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.

Surrounding gate long channel nanowire MOSFET modelling—extended analysis

Based on the approximate solution of Poisson?s equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers? mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson?s equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.

A New Threshold Voltage Analytical Model of Strained Si/SiGe MOSFET

In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model, simulations were performed. Obtained results are in very good agreement with the already known ones