Patrice Gamand

A cost effective true European DBS low noise converter

Monolithic image rejection downconverters have been designed and fabricated on a 2.2 mm/sup 2/ chip using a low-cost 0.5 mu m MESFET process. The circuit reported uses only one supply voltage and converts signals from the fixed service satellite (FFS) low band (10.95-11.7 GHz), the direct broadcast satellite (DBS) band (11.7-12.5 GHz), and the FFS high band (12.5-12.7 GHz) with a typical 36 dB of conversion gain.<<ETX>>

1 to 20 GHZ Monolithic Distributed Amplifier using GaAs MESFET'S or HEMT'S

1 to 20 GHz monolithic FET amplifiers have been designed and fabricated. The design approach is based on a detailed analysis of the impedances and the cut-off frequency of the transmission lines to reduce the ripple and to increase the bandwidth up to the maximum capabilities of the FETs. The packaged MMIC results snow an overall gain of 11±1 dB for 2 stages from 1 to 19.5 GHz with an overall noise figure of 7.5 dB. Better performances can be achieved with 0,5 ¿m HEMTs : 8 dB gain from 1 to 20 GHz with a much lower noise figure (¿ 5 dB)

Millimetre Wave Monolithic HEMT Oscillators Fabricated with a Standard 0.5 μm Process

This paper describes 3 types of free running oscillators that have been designed and fabricated using a 0.5 micron HEMT process. Output powers, including the waveguide transition, of -3 to -5 dBm have been measured in Q band. One type of oscillator, exhibits an external Q greater than 2700 at 52 GHz. The design approaches and the results, on phase noise in particular, are discussed.