Patrice Rey

New technological development for far-infrared bolometer arrays

CEA.S/DAPNIA/DSM and LETI/CEA.S are developing since 1996 a new technology for the realizing of far IR bolometer arrays sensitive in submillimeter wavelength range. The operating temperature is 0.3 Kelvin. Microtechnologies on silicon and flip/chip techniques are used for the detector fabrication and CMOS technology is used for the multiplexer and the readout integrated circuit. We present the concept that we have defined for the focal pane architecture and the readout principle design for 16 X 16 or 32 X 32 array. The first experimental result obtained on optical, electrical and thermal parameters are presented.

Submillimeter bolometers arrays for the PACS/Herschel spectro-photometer

Since 1997, CEA/SAP and CEA/LETI/SLIR have been developing monolithic Si bolometer arrays sensitive in the far infrared and submillimiter range for space observations. Two focal planes, 32x64 and 16x32 pixel arrays, are designed and manufactured for the PACS (Photodetector Array Camera and Spectrometer) instrument of the Herschel observatory, to be launched in 2007. The two arrays cover respectively the 60-130 μm and 130-210 μm ranges. The goal of these large bolometer arrays is to achieve observations in a Background limited NEP around 10-16 W.Hz-1/2. The detector physics and manufacture techniques of the different stages of these arrays are first presented. Then we describe the read-out and multiplexing cold electronics (300mK) that make possible several functional modes (temporal and fixed pattern noise reduction,...). The latest experimental measurements carried out with the complete detector system at the nominal temperature are presented and performances are discussed.

Examples of MEMS technologies resulting in industrial transfers

We present here three technological processes developed by LETI which have resulted in successful industrial transfers for MEMS.