Patrick Rode
Osram Opto Semiconductors GmbH
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Publication
Featured researches published by Patrick Rode.
Journal of Applied Physics | 2012
S. Fritze; Philipp Drechsel; Peter Stauss; Patrick Rode; T. Markurt; Tobias Schulz; M. Albrecht; J. Bläsing; Armin Dadgar; A. Krost
Thin AlGaN interlayers have been grown into a thick GaN stack on Si substrates to compensate tensile thermal stress and significantly improve the structural perfection of the GaN. In particular, thicker interlayers reduce the density in a-type dislocations as concluded from x-ray diffraction (XRD) measurements. Beyond an interlayer thickness of 28 nm plastic substrate deformation occurs. For a thick GaN stack, the first two interlayers serve as strain engineering layers to obtain a crack-free GaN structure, while a third strongly reduces the XRD ω-(0002)-FWHM. The vertical strain and quality profile determined by several XRD methods demonstrates the individual impact of each interlayer.
Proceedings of SPIE | 2011
Torbjörn Eriksson; Ki Dong Lee; Babak Heidari; Patrick Rode; Werner Bergbauer; Martin Mandl; Christopher Kölper; Martin Strassburg
Nano Imprint Lithography (NIL) is a promising technology that combines low costs with high throughput for fabrication of sub 100 nm scale features. One of the first application areas in which NIL is used is manufacturing of various types of LEDs. The wafers used for producing LEDs are typically III/V semiconductor materials grown with epitaxial processes. These types of substrates suffer from growth defects like hexagonal spikes, vpits, waferbowing, atomic steps and surface corrugations on a scale of few 10 μm or even large islands of irregularities. The mentioned irregularities are particularly disturbing when NIL based processes are utilized to create patterns onto the wafer surface. The nanopatterns created by NIL can be applied to control metal organic vapour phase epitaxy (MOVPE) growth of GaN nanorods. This paper will show that NIL is an excellent technology to produce nanopatterned GaN substrates highly suitable to grow defect free arrays of positioncontrolled nanorods for ultrahigh brightness LED applications.
Archive | 2008
Karl Engl; Patrick Rode; Lutz Hoeppel; Matthias Sabathil
Archive | 2008
Karl Engl; Patrick Rode; Lutz Höppel; Matthias Sabathil
Archive | 2009
Jürgen Moosburger; Norwin von Malm; Patrick Rode; Lutz Höppel; Karl Engl
Archive | 2009
Patrick Rode; Martin Strassburg; Karl Engl; Lutz Höppel
Archive | 2008
Stefan Illek; Andreas Ploessl; Alexander Heindl; Patrick Rode; Dieter Eissler
Archive | 2008
Karl Engl; Patrick Rode; Lutz Höppel; Matthias Sabathil
Physica Status Solidi (a) | 2012
Philipp Drechsel; Peter Stauss; Werner Bergbauer; Patrick Rode; S. Fritze; A. Krost; T. Markurt; Tobias Schulz; M. Albrecht; H. Riechert; Ulrich Steegmüller
Archive | 2009
Karl Engl; Patrick Rode; Lutz Hoeppel; Martin Strassburg