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Dive into the research topics where Patrick Rode is active.

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Featured researches published by Patrick Rode.


Journal of Applied Physics | 2012

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

S. Fritze; Philipp Drechsel; Peter Stauss; Patrick Rode; T. Markurt; Tobias Schulz; M. Albrecht; J. Bläsing; Armin Dadgar; A. Krost

Thin AlGaN interlayers have been grown into a thick GaN stack on Si substrates to compensate tensile thermal stress and significantly improve the structural perfection of the GaN. In particular, thicker interlayers reduce the density in a-type dislocations as concluded from x-ray diffraction (XRD) measurements. Beyond an interlayer thickness of 28 nm plastic substrate deformation occurs. For a thick GaN stack, the first two interlayers serve as strain engineering layers to obtain a crack-free GaN structure, while a third strongly reduces the XRD ω-(0002)-FWHM. The vertical strain and quality profile determined by several XRD methods demonstrates the individual impact of each interlayer.


Proceedings of SPIE | 2011

Fabrication of hole pattern for position-controlled MOVPE-grown GaN nanorods with highly precise nanoimprint technology

Torbjörn Eriksson; Ki Dong Lee; Babak Heidari; Patrick Rode; Werner Bergbauer; Martin Mandl; Christopher Kölper; Martin Strassburg

Nano Imprint Lithography (NIL) is a promising technology that combines low costs with high throughput for fabrication of sub 100 nm scale features. One of the first application areas in which NIL is used is manufacturing of various types of LEDs. The wafers used for producing LEDs are typically III/V semiconductor materials grown with epitaxial processes. These types of substrates suffer from growth defects like hexagonal spikes, vpits, waferbowing, atomic steps and surface corrugations on a scale of few 10 μm or even large islands of irregularities. The mentioned irregularities are particularly disturbing when NIL based processes are utilized to create patterns onto the wafer surface. The nanopatterns created by NIL can be applied to control metal organic vapour phase epitaxy (MOVPE) growth of GaN nanorods. This paper will show that NIL is an excellent technology to produce nanopatterned GaN substrates highly suitable to grow defect free arrays of positioncontrolled nanorods for ultrahigh brightness LED applications.


Archive | 2008

Optoelectronic semiconductor body and method for producing the same

Karl Engl; Patrick Rode; Lutz Hoeppel; Matthias Sabathil


Archive | 2008

Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen

Karl Engl; Patrick Rode; Lutz Höppel; Matthias Sabathil


Archive | 2009

Radiation-emitting semiconductor chip

Jürgen Moosburger; Norwin von Malm; Patrick Rode; Lutz Höppel; Karl Engl


Archive | 2009

Method for producing an optoelectronic component and optoelectronic component

Patrick Rode; Martin Strassburg; Karl Engl; Lutz Höppel


Archive | 2008

Optoelectronic Component and Method for the Manufacture of a Plurality of Optoelectronic Components

Stefan Illek; Andreas Ploessl; Alexander Heindl; Patrick Rode; Dieter Eissler


Archive | 2008

Opto-electronic semiconductor body and method for the production thereof

Karl Engl; Patrick Rode; Lutz Höppel; Matthias Sabathil


Physica Status Solidi (a) | 2012

Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

Philipp Drechsel; Peter Stauss; Werner Bergbauer; Patrick Rode; S. Fritze; A. Krost; T. Markurt; Tobias Schulz; M. Albrecht; H. Riechert; Ulrich Steegmüller


Archive | 2009

Optoelectronic Semiconductor Body and Method for the Production Thereof

Karl Engl; Patrick Rode; Lutz Hoeppel; Martin Strassburg

Collaboration


Dive into the Patrick Rode's collaboration.

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Lutz Höppel

Osram Opto Semiconductors GmbH

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Karl Engl

Osram Opto Semiconductors GmbH

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Werner Bergbauer

Osram Opto Semiconductors GmbH

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Martin Strassburg

Osram Opto Semiconductors GmbH

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Peter Stauss

Osram Opto Semiconductors GmbH

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Matthias Sabathil

Technische Universität München

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Philipp Drechsel

Osram Opto Semiconductors GmbH

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Norwin von Malm

Osram Opto Semiconductors GmbH

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Alexander Heindl

Osram Opto Semiconductors GmbH

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Jürgen Moosburger

Osram Opto Semiconductors GmbH

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