Patrick Sean Finnegan

Voltage-Controlled Ku-Band and X-Band Tunable Combline Filters Using Barium-Strontium-Titanate

Tunable X-band and Ku-band combline bandpass filters using barium-strontium-titanate capacitors fabricated on alumina substrates with through-substrate CuW vias are reported. Under a 0-100 V bias, the X-band filter changes center frequency from 8.75 GHz to 10.96 GHz with 4-8 dB of loss while the Ku-band filter changes center frequency from 11.7 GHz to 14.3 GHz with 6-10 dB of loss. Advances in processing and integration related to the filter fabrication and design are discussed.

A DC to 10-GHz 6-b RF MEMS time delay circuit

A 6-b radio frequency (RF) microelectromechanical system (MEMS) time-delay circuit operating from dc to 10 GHz with 393.75-ps total time delay is presented. The circuit is fabricated on 250-/spl mu/m-thick alumina and uses metal contacting RF MEMS switches to realize series-shunt SP4T switching networks. The circuit demonstrates 1.8+/-0.6 dB of loss at 10 GHz and has linear phase response across the entire band with accuracy of better than a least significant bit for most states.

A low loss RF MEMS Ku-band integrated switched filter bank

A switched Ku-band filter bank has been developed using two single-pole triple-throw (SP3T) microelectromechanical systems (MEMS) switching networks, and three fixed three-pole end-coupled bandpass filters. A tuning range of 17.7% from 14.9 to 17.8 GHz was achieved with a fractional bandwidth of 7.7 /spl plusmn/2.9%, and mid-band insertion loss ranging from 1.7 to 2.0 dB.

A widely tunable RF MEMS end-coupled filter

A three-pole tunable end-coupled filter from 6 to 10 GHz was developed with a broad 35% tuning range. This tuning range was realized by switching distributed loading structures with radio frequency microelectromechanical systems (RF MEMS) capacitive switches. By tuning the coupling capacitors as well as the loading capacitors, the filter achieved a constant fractional bandwidth of 15/spl plusmn/0.3% and an insertion loss ranging from 3.3 dB to 3.8 dB over the entire band. Digital switching ensured good thermal stability, and microstrip transmission lines provided lower insertion loss than with coplanar waveguide. Future improvements are expected to decrease the insertion loss to below 2.1 dB.

An X-band to Ku-band RF MEMS switched coplanar strip filter

Radio frequency microelectromechanical systems (RF MEMS) are key enabling technologies for miniature reconfigurable circuits such as microwave filters. We present a two-pole monolithic RF MEMS switched filter, fabricated on GaAs, that employs surface-micromachined capacitors to present a variable capacitance to a coupled coplanar strip filter, thereby switching the filter center frequency 37% between 10.7 GHz and 15.5 GHz with voltages of 20 and 0 V, respectively. This 15% bandwidth filter occupies a chip area of 2.2 /spl times/1.5 mm and demonstrates less than 2-dB of loss, making it promising for numerous applications within these critical frequency bands.

Fabrication and characterization of ohmic contacting RF MEMS switches

We have fabricated and characterized radio frequency microelectromechanical systems (RF MEMS) ohmic switches for applications in discrete tunable filters and phase shifters over a frequency range of 0 to 20 GHz. Our previously reported cantilever switches have been redesigned for higher isolation and are now achieving 22 dB of isolation at 10 GHz. The measured insertion loss is 0.15 dB at 10 GHz. We have also fabricated and characterized new devices, designated “crab” switches, to increase isolation and contact forces relative to the cantilever design. The measured insertion loss and isolation are 0.1 dB per switch at 20 GHz and 22 dB at 10 GHz, respectively. A simple and accurate equivalent model has been developed, consisting of a transmission line segment and either a series capacitor to represent the blocking state or a series resistor to represent the passing state. Experimental analysis of the switch shows that high contact and substrate capacitive coupling degrades the isolation performance. Simulations indicate that the isolation improves to 30 dB at 10 GHz by reducing these capacitances. The crab switch design has a measured contact force of 120 μN, which represents a factor of four increase over the cantilever switch contact force and results in consistent, low-loss performance.

Micrometer-scale fabrication of complex three dimensional lattice + basis structures in silicon

A complementary metal oxide semiconductor (CMOS) compatible version of membrane projection lithography (MPL) for fabrication of micrometer-scale three-dimensional structures is presented. The approach uses all inorganic materials and standard CMOS processing equipment. In a single layer, MPL is capable of creating all 5 2D-Bravais lattices. Furthermore, standard semiconductor processing steps can be used in a layer-by-layer approach to create fully three dimensional structures with any of the 14 3D-Bravais lattices. The unit cell basis is determined by the projection of the membrane pattern, with many degrees of freedom for defining functional inclusions. Here we demonstrate several unique structural motifs, and characterize 2D arrays of unit cells with split ring resonators in a silicon matrix. The structures exhibit strong polarization dependent resonances and, for properly oriented split ring resonators (SRRs), coupling to the magnetic field of a normally incident transverse electromagnetic wave, a response unique to 3D inclusions.

Single objective light-sheet microscopy for high-speed whole-cell 3D super-resolution

We have developed a method for performing light-sheet microscopy with a single high numerical aperture lens by integrating reflective side walls into a microfluidic chip. These 45° side walls generate light-sheet illumination by reflecting a vertical light-sheet into the focal plane of the objective. Light-sheet illumination of cells loaded in the channels increases image quality in diffraction limited imaging via reduction of out-of-focus background light. Single molecule super-resolution is also improved by the decreased background resulting in better localization precision and decreased photo-bleaching, leading to more accepted localizations overall and higher quality images. Moreover, 2D and 3D single molecule super-resolution data can be acquired faster by taking advantage of the increased illumination intensities as compared to wide field, in the focused light-sheet.

Micro-fabricated stylus ion trap

An electroformed, three-dimensional stylus Paul trap was designed to confine a single atomic ion for use as a sensor to probe the electric-field noise of proximate surfaces. The trap was microfabricated with the UV-LIGA technique to reduce the distance of the ion from the surface of interest. We detail the fabrication process used to produce a 150 μm tall stylus trap with feature sizes of 40 μm. We confined single, laser-cooled, (25)Mg(+) ions with lifetimes greater than 2 h above the stylus trap in an ultra-high-vacuum environment. After cooling a motional mode of the ion at 4 MHz close to its ground state ( = 0.34 ± 0.07), the heating rate of the trap was measured with Raman sideband spectroscopy to be 387 ± 15 quanta/s at an ion height of 62 μm above the stylus electrodes.

Ku-Band Six-Bit RF MEMS Time Delay Network

A six-bit time delay circuit operating from DC to 18 GHz is reported. Capacitively loaded transmission lines are used to reduce the physical length of the delay elements and shrink the die size. Additionally, selection of the reference line lengths to avoid resonances allows the replacement of series-shunt switching elements with only series elements. With through-wafer transitions and a packaging seal ring, the 7 mm x 10 mm circuit demonstrates <2.8 dB of loss and 60 ps of delay with good delay flatness and accuracy through 18 GHz.