Christopher W. Dyck

A Soft-Landing Waveform for Actuation of a Single-Pole Single-Throw Ohmic RF MEMS Switch

A soft-landing actuation waveform was designed to reduce the bounce of a single-pole single-throw (SPST) ohmic radio frequency (RF) microelectromechanical systems (MEMS) switch during actuation. The waveform consisted of an actuation voltage pulse, a coast time, and a hold voltage. The actuation voltage pulse had a short duration relative to the transition time of the switch and imparted the kinetic energy necessary to close the switch. After the actuation pulse was stopped, damping and restoring forces slowed the switch to near-zero velocity as it approached the closed position. This is referred to as the coast time. The hold voltage was applied upon reaching closure to keep the switch from opening. An ideal waveform would close the switch with near zero impact velocity. The switch dynamics resulting from an ideal waveform were modeled using finite element methods and measured using laser Doppler vibrometry. The ideal waveform closed the switch with an impact velocity of less than 3 cm/s without rebound. Variations in the soft-landing waveform closed the switch with impact velocities of 12.5 cm/s with rebound amplitudes ranging from 75 to 150 nm compared to impact velocities of 22.5 cm/s and rebound amplitudes of 150 to 200 nm for a step waveform. The ideal waveform closed the switch faster than a simple step voltage actuation because there was no rebound and it reduced the impact force imparted on the contacting surfaces upon closure

Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 μN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (Some figures may appear in colour only in the online journal)

A low loss RF MEMS Ku-band integrated switched filter bank

A switched Ku-band filter bank has been developed using two single-pole triple-throw (SP3T) microelectromechanical systems (MEMS) switching networks, and three fixed three-pole end-coupled bandpass filters. A tuning range of 17.7% from 14.9 to 17.8 GHz was achieved with a fractional bandwidth of 7.7 /spl plusmn/2.9%, and mid-band insertion loss ranging from 1.7 to 2.0 dB.

A widely tunable RF MEMS end-coupled filter

A three-pole tunable end-coupled filter from 6 to 10 GHz was developed with a broad 35% tuning range. This tuning range was realized by switching distributed loading structures with radio frequency microelectromechanical systems (RF MEMS) capacitive switches. By tuning the coupling capacitors as well as the loading capacitors, the filter achieved a constant fractional bandwidth of 15/spl plusmn/0.3% and an insertion loss ranging from 3.3 dB to 3.8 dB over the entire band. Digital switching ensured good thermal stability, and microstrip transmission lines provided lower insertion loss than with coplanar waveguide. Future improvements are expected to decrease the insertion loss to below 2.1 dB.

Modeling, simulation, and testing of the mechanical dynamics of an RF MEMS switch

Mechanical dynamics can be a determining factor for the switching speed of radio-frequency microelectromechanical systems (RF MEMS) switches. This paper presents the simulation of the mechanical motion of a microswitch under actuation. The switch has a plate suspended by springs. When an electrostatic actuation is applied, the plate moves toward the substrate and closes the switch. Simulations are calculated via a high-fidelity finite element model that couples solid dynamics with electrostatic actuation. It incorporates non-linear coupled dynamics and accommodates fabrication variations. Experimental modal analysis gives results in the frequency domain that verifies the natural frequencies and mode shapes predicted by the model. An effective 1D model is created and used to calculate an actuation voltage waveform that minimizes switch velocity at closure. In the experiment, the switch is actuated with this actuation voltage, and the displacements of the switch at various points are measured using a laser Doppler velocimeter through a microscope. The experiments are repeated on several switches from different batches. The experimental results verify the model.

An X-band to Ku-band RF MEMS switched coplanar strip filter

Radio frequency microelectromechanical systems (RF MEMS) are key enabling technologies for miniature reconfigurable circuits such as microwave filters. We present a two-pole monolithic RF MEMS switched filter, fabricated on GaAs, that employs surface-micromachined capacitors to present a variable capacitance to a coupled coplanar strip filter, thereby switching the filter center frequency 37% between 10.7 GHz and 15.5 GHz with voltages of 20 and 0 V, respectively. This 15% bandwidth filter occupies a chip area of 2.2 /spl times/1.5 mm and demonstrates less than 2-dB of loss, making it promising for numerous applications within these critical frequency bands.

Supercritical carbon dioxide solvent extraction from surface-micromachined micromechanical structures

Results are presented supporting the use of supercritical carbon dioxide (SCCO2) drying to enhance the yield of surface-micromachined micromechanical devices following the final release etch. The equipment and extraction process of the SCCO2 system are described, and results of successfully released cantilevered beams and microengines are presented. A new system capable of drying 6 inch wafers is also described.

Fabrication and characterization of ohmic contacting RF MEMS switches

We have fabricated and characterized radio frequency microelectromechanical systems (RF MEMS) ohmic switches for applications in discrete tunable filters and phase shifters over a frequency range of 0 to 20 GHz. Our previously reported cantilever switches have been redesigned for higher isolation and are now achieving 22 dB of isolation at 10 GHz. The measured insertion loss is 0.15 dB at 10 GHz. We have also fabricated and characterized new devices, designated “crab” switches, to increase isolation and contact forces relative to the cantilever design. The measured insertion loss and isolation are 0.1 dB per switch at 20 GHz and 22 dB at 10 GHz, respectively. A simple and accurate equivalent model has been developed, consisting of a transmission line segment and either a series capacitor to represent the blocking state or a series resistor to represent the passing state. Experimental analysis of the switch shows that high contact and substrate capacitive coupling degrades the isolation performance. Simulations indicate that the isolation improves to 30 dB at 10 GHz by reducing these capacitances. The crab switch design has a measured contact force of 120 μN, which represents a factor of four increase over the cantilever switch contact force and results in consistent, low-loss performance.

Parallel-plate electrostatic dual-mass resonator

A surface-micromachined two-degree-of-freedom system that was driven by parallel-plate actuation at antiresonance was demonstrated. The system consisted of an absorbing mass connected by folded springs to a drive mass. The system demonstrated substantial motion amplification at antiresonance. The absorber mass amplitudes were 0.8 - 0.85 micrometer at atmospheric pressure while the drive mass amplitudes were below 0.1 micrometer. Larger absorber mass amplitudes were not possible because of spring softening in the drive mass springs. Simple theory of the dual-mass oscillator has indicated that the absorber mass may be insensitive to limited variations in strain and damping. This needs experimental verification. Resonant and antiresonant frequencies were measured and compared to the designed values. Resonant frequency measurements were difficult to compare to the design calculations because of time-varying spring softening terms that were caused by the drive configuration. Antiresonant frequency measurements were close to the design value of 5.1 kHz. The antiresonant frequency was not dependent on spring softening. The measured absorber mass displacement at antiresonance was compared to computer simulated results. The measured value was significantly greater, possibly due to neglecting fringe fields in the force expression used in the simulation.

Failure analysis of radio frequency (rf) micro-electro-mechanical systems (MEMS)

MEMS are rapidly emerging as critical components in the telecommunications industry. This enabling technology is currently being implemented in a variety of product and engineering applications. MEMS are currently being used as optical switches to reroute light, tunable filters, and mechanical resonators. Radio frequency (RF) MEMS must be compatible with current Gallium Arsenide (GaAs) microwave integrated circuit (MMIC) processing technologies for maximum integration levels. The RF MEMS switch discussed in this paper was fabricated using various layers of polyimide, silicon oxynitride (SiON), gold, and aluminum monolithically fabricated on a GaAs substrate. Fig. 1 shows a metal contacting series switch. This switch consists of gold signal lines (transmission lines), and contact metallization. SiON was deposited to form the fixed-fixed beam, and aluminum was deposited to form the top actuation electrode. To ensure product performance and reliability, RF MEMS switches are tested at both the wafer and package levels. Various processing irregularities may pass the visual inspection but fail electrical testing. This paper will focus on the failure mechanisms found in the first generation of RF MEMS developed at Sandia National Laboratories. Various tools and techniques such as scanning electron microscopy (SEM), resistive contrast imaging (RCI), focused ion beam (FIB), and thermally-induced voltage alteration (TIVA) have been employed to diagnose the failure mechanisms. The analysis performed using these tools and techniques led to corrective actions implemented in the next generation of RF MEMS metal contacting series switches.