Patrik Brusheim
Lund University
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Publication
Featured researches published by Patrik Brusheim.
Physical Review B | 2006
Andreas Fuhrer; Patrik Brusheim; Thomas Ihn; Martin Sigrist; Klaus Ensslin; Werner Wegscheider; Max Bichler
Transport measurements are presented on a quantum ring that is tunnel-coupled to a quantum dot. When the dot is in the Coulomb blockade regime, but strongly coupled to the open ring, Fano line shapes are observed in the current through the ring, when the electron number in the dot changes by 1. The symmetry of the Fano resonances is found to depend on the magnetic flux penetrating the area of the ring and on the strength of the ring-dot coupling. At temperatures above T=0.65 K the Fano effect disappears, while the Aharonov-Bohm interference in the ring persists up to T=4.2 K. Good agreement is found between these experimental observations and a single-channel scattering matrix model including decoherence in the dot.
Nanotechnology | 2007
Jie Sun; Daniel Wallin; Patrik Brusheim; Ivan Maximov; Z. G. Wang; Hongqi Xu
Three-terminal ballistic junctions (TBJs) are fabricated from a high-mobility InP/In0.75Ga0.25As heterostructure by electron-beam lithography. The voltage output from the central branch is measured as a function of the voltages applied to the left and right branches of the TBJs. The measurements show that the TBJs possess an intrinsic nonlinearity. Based on this nonlinearity, a novel room-temperature functional frequency mixer and phase detector are realized. The TBJ frequency mixer and phase detector are expected to have advantages over traditional circuits in terms of simple structure, small size and high speed, and can be used as a new type of building block in nanoelectronics.
Physical Review B | 2009
Dan Csontos; Patrik Brusheim; U. Zuelicke; Hongqi Xu
We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation in subband-edge g factors between different subbands. We elucidate the interplay between quantum confinement and heavy-hole-light-hole mixing and identify a certain robustness displayed by low-lying hole-wire subband edges with respect to changes in the shape or strength of the wire potential. The ability to address individual subband edges in, e.g., transport or optical experiments enables the study of hole states with nonstandard spin polarization, which do not exist in spin-3/2 systems. Changing the aspect ratio of hole wires with rectangular cross section turns out to strongly affect the g factor of subband edges, providing an opportunity for versatile in situ tuning of hole-spin properties with possible application in spintronics. The relative importance of cubic crystal symmetry is discussed, as well as the spin splitting away from zone-center subband edges. (Less)
Physical Review B | 2006
Patrik Brusheim; Hongqi Xu
We study spin-resolved probability distributions for electrons in a multichannel waveguide in the presence of a spin-orbit interaction. For a spin-polarized electron injection, a zitterbewegung pattern is predicted in the probability distribution of electrons in the waveguide. For a spin-unpolarized injection, the spin-resolved electron probability in the waveguide shows spin accumulations. In addition to the spin Hall phenomenon-namely, accumulations of opposite spins at the lateral edges of the waveguide-we predict the existence of a regular stripe pattern of spin accumulations in the internal region of the waveguide. We show that the predicted zitterbewegung and spin Hall effect stem from the same mechanism and are formed from coherent states of electrons in the waveguide. (Less)
Physical Review B | 2008
D. Csontos; U. Zülicke; Patrik Brusheim; Hongqi Xu
We have analyzed theoretically the Zeeman splitting of hole-quantum-wire subband edges. As is typical for any bound state, their g factor depends on both an intrinsic g factor of the material and an additional contribution arising from a finite bound-state orbital angular momentum. We discuss the quantum-confinement-induced interplay between bulk-material and orbital effects, which is nontrivial due to the presence of strong spin-orbit coupling. A compact analytical formula is provided that elucidates this interplay and can be useful for predicting Zeeman splitting in generic hole-wire geometries.
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology | 2008
Jie Sun; Daniel Wallin; Patrik Brusheim; Ivan Maximov; Hongqi Xu
Three-Terminal ballistic junctions (TBJs) and planar quantum-wire transistors (QWTs) are emerging nanoelectronic devices with various novel electrical properties. In this work, we realize novel nanoelectronic analogue and digital circuits with TBJs and planar QWTs made on In0.75Ga0.25As/InP two-dimensional electron gas (2DEG) material. First we show that a single TBJ can work as a frequency mixer or a phase detector. Second, we fabricate an integrated nanostructure containing two planar QWTs, which can be used as an RS flip-flop element. Third, we make a nanoelectronic circuit by the integration of two TBJs and two planar QWTs. This circuit shows the RS flip-flop functionalities with much larger noise margins in both high and low level inputs. All measurements in this work are done at room temperature.
PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 | 2007
Jie Sun; Daniel Wallin; Patrik Brusheim; Ivan Maximov; Z. G. Wang; Hongqi Xu
Nanometer‐scale electron devices containing three‐terminal ballistic junctions are fabricated by electron‐beam lithography on InP/InGaAs two‐dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip‐flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.
International Conference on Nanoscience and Technology, 2006 | 2007
Patrik Brusheim; Hongqi Xu
We study hole spin transport in semiconductor systems with total angular momentum J = 3/2. By deriving an expression for the polarisation vector we show that the in-plane polarisation vanishes whenever only heavy hole channels are open in the leads. We further derive a set of constraints on the spin transport through a symmetry analysis and study the hole spin Hall effect in the presence of randomly distributed scatterers.
Physical Review Letters | 2008
Stefano Roddaro; Andreas Fuhrer; Patrik Brusheim; Carina Fasth; Hongqi Xu; Lars Samuelson; Jie Xiang; Charles M. Lieber
Physical Review B | 2005
Lebo Zhang; Patrik Brusheim; Hongqi Xu
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MacDiarmid Institute for Advanced Materials and Nanotechnology
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