Paul Cadden-Zimansky

Multicomponent fractional quantum Hall effect in graphene

Transferring graphene onto hexagonal boron nitride enables high-mobility multiterminal quantum Hall devices to be built. This makes it possible to study graphenes unique fractional quantum Hall behaviour more easily and more directly than previously.

Spin and valley quantum Hall ferromagnetism in graphene

The extra states sometimes observed in graphene’s quantum Hall characteristics have been presumed to be the result of broken SU(4) symmetry. Magnetotransport measurements of high-quality graphene in a tilted magnetic field finally prove this is indeed the case.

Symmetry Breaking in the Zero-Energy Landau Level in Bilayer Graphene

The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high-field regime, the eightfold degeneracy in the zero-energy Landau level is completely lifted, exhibiting new quantum Hall states corresponding to filling factors nu=0, 1, 2, and 3. Measurements of the activation energy gaps for the nu=2 and 3 filling factors in tilted magnetic fields exhibit no appreciable dependence on the in-plane magnetic field, suggesting that these Landau level splittings are independent of spin. In addition, measurements taken at the nu=0 charge neutral point show that, similar to single layer graphene, the bilayer becomes insulating at high fields.

Tunable fractional quantum Hall phases in bilayer graphene

Breaking down graphene degeneracy Bilayer graphene has two layers of hexagonally arranged carbon atoms stacked on top of each other in a staggered configuration. This spatial arrangement results in degenerate electronic states: distinct states that have the same energy. Interaction between electrons can cause the states to separate in energy, and so can external fields (see the Perspective by LeRoy and Yankowitz). Kou et al., Lee et al., and Maher et al. used three distinct experimental setups that clarify different parameter regimes of bilayer graphene. Science, this issue p. 55, p. 58, p. 61; see also p. 31 The influence of the electric field on electronic properties is studied in dual-gated bilayer graphene. [Also see Perspective by LeRoy and Yankowitz] Symmetry-breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the charge neutrality point. In a quantizing magnetic field, electron interactions can cause spontaneous symmetry-breaking within the spin and valley degrees of freedom, resulting in quantum Hall effect (QHE) states with complex order. Here, we report fractional QHE states in BLG that show phase transitions that can be tuned by a transverse electric field. This result provides a model platform with which to study the role of symmetry-breaking in emergent states with topological order.

Ultrafast carrier and phonon dynamics in Bi2Se3 crystals

in this material, 11 particularly the electron‐electron, electron‐phonon, and phonon‐phonon interactions. In this letter, we report the ultrafast time-resolved optical spectroscopy study of Bi2Se3 crystals in both the time domain and the energy domain. Our measurements reveal three underlying relaxation processes in the transient response of Bi2Se3, each associated with different physical mechanisms. It is also shown that the relative strength of these processes is sensitive to air exposure of the samples. The observed charge trapping and air doping effects are likely due to the presence of Se vacancies, a major issue material scientists working to use the properties of Bi2Se3 will face in the near term. The Bi2Se3 single crystals studied in this work were synthesized via the Bridgman method at Purdue University and Fudan University. During crystal growth, the mixture of high purity elements was first deoxidized and purified by multiple vacuum distillations, and then heated to 850‐900 °C for 15 h, followed by a slow cool down under a controlled pressure of Se to compensate for possible Se vacancies. Afterwards, the samples were zone refined at a speed of 0.5‐1.5 mm/hour with a linear temperature gradient set to 4‐5 °C /cm, until a temperature of 670 °C was reached. The as-grown Bi2Se3 crystals from both groups are naturally n-doped due to remnant Se vacancies. 4 Hall mea

Interaction-Induced Shift of the Cyclotron Resonance of Graphene Using Infrared Spectroscopy

We report a study of the cyclotron resonance (CR) transitions to and from the unusual n=0 Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and nonmonotonic shifts as a function of the LL filling factor, with the energy being largest at half filling of the n=0 level. The magnitude of these shifts, and their magnetic field dependence, suggests that an interaction-enhanced energy gap opens in the n=0 level at high magnetic fields. Such interaction effects normally have a limited impact on the CR due to Kohns theorem [W. Kohn, Phys. Rev. 123, 1242 (1961)], which does not apply in graphene as a consequence of the underlying linear band structure.

Nonlocal correlations in normal-metal superconducting systems

We examine nonlocal effects between normal-metal gold probes connected by superconducting aluminum. For highly transparent Au/Al interfaces, we find nonlocal voltages that obey a spatial and temperature evolution distinct from the nonequilibrium charge imbalance signals usually found in such systems. These voltages are consistent with the predicted effects of crossed Andreev reflection and elastic cotunneling, effects that involve coherent correlations between spatially separated electrons.

Measurement of the ν = 1 / 3 Fractional Quantum Hall Energy Gap in Suspended Graphene

We report on magnetotransport measurements of multiterminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for ν=1/3. By measuring the temperature dependence of these resistance minima, the energy gap for the 1/3 fractional state in graphene is determined to be at ∼20  K at 14 T.

Low-temperature high-resolution magnetic force microscopy using a quartz tuning fork

We have developed a low-temperature high resolution magnetic force microscope (MFM) using a quartz tuning fork that can operate in a magnetic field. A tuning fork with a spring constant of 1300N∕m mounted with a commercial MFM cantilever tip was used. We have obtained high-resolution images of the stray magnetic fields exerted from grains with a spatial resolution of 15 nm and force resolution of 2 pN at 4.2 K. Tuning fork-based magnetic force microscopes have the potential to be used at millikelvin temperatures due to their low power dissipation and high force sensitivity.

Charge imbalance, crossed Andreev reflection and elastic co-tunnelling in ferromagnet/superconductor/normal-metal structures

We examine here electronic transport in nanoscale systems where normal and ferromagnetic probes are attached to a conventional superconductor. While reviewing the long-studied effects of Andreev reflection and charge imbalance, we concentrate on two recently predicted coherent, nonlocal processes known as crossed Andreev reflection and elastic co-tunnelling. These processes can occur when two spatially separated normal or ferromagnetic probes are separated by a distance comparable to the coherence length of the superconductor. Here we show that normal probes, by avoiding some of the experimental and theoretical complications of ferromagnetic probes, may offer a better opportunity to examine these processes.