Paul Gräupner

Extending optical lithography with immersion

As the semiconductor industry looks to the future to extend manufacturing beyond 100nm, ASML have developed a new implementation of an old optical method for lithography. Immersion lithography can support the aggressive industry roadmap and offers the ability to manufacture semiconductor devices at a low k1. In order to make immersion lithography a production worthy technology a number of challenges have to be overcome. This paper provides the results of our feasibility study on immersion lithography. We show through experimental and theoretical evaluation that we can overcome the critical concerns related to immersion lithography. We show results from liquid containment tests focussing on its effects on the scan speed of the system and the formation of micro-bubbles in the fluid. We present fluid-to-resist compatibility tests on resolution, using a custom-built interference setup. Ultimate resolution is tested using a home build 2 beam interference setup. ASML built a prototype full field scanning exposure system based on the dual stage TWINSCAN platform. It features a full field 0.75 NA refractive projection lens. We present experimental data on imaging and overlay.

Polarization influence on imaging

We give a general introduction into polarized imaging and report on a Jones pupil approach for a complete evaluation of the resulting optical performance. The Jones pupil assigns a Jones matrix to each point of the exit pupil, describing the impact of both the global phase and the polarization on imaging. While we already can learn much about the optical system by taking a close look at the Jones pupil-and starting imaging simulations from it-a quantitative assessment is necessary for a complete evaluation of imaging. To do this, we generalize the concept of scalar Zernike aberrations to Jones-Zernike aberrations by expansion of the Jones pupil into vector polynomials. The resulting method is nonparaxial, i.e., the effect of the polarization-dependent contrast loss for high numerical apertures is included. The aberrations of the Jones matrix pupil are a suitable tool to identify the main drivers determining polarization performance. Furthermore, they enable us to compare the polarized and unpolarized performance of such a characterized lithographic system.

Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners

The application of customized and freeform illumination source shapes is a key enabler for continued shrink using 193 nm water based immersion lithography at the maximum possible NA of 1.35. In this paper we present the capabilities of the DOE based Aerial XP illuminator and the new programmable FlexRay illuminator. Both of these advanced illumination systems support the generation of such arbitrarily shaped illumination sources. We explain how the different parts of the optical column interact in forming the source shape with which the reticle is illuminated. Practical constraints of the systems do not limit the capabilities to utilize the benefit of freeform source shapes vs. classic pupil shapes. Despite a different pupil forming mechanism in the two illuminator types, the resulting pupils are compatible regarding lithographic imaging performance so that processes can be transferred between the two illuminator types. Measured freeform sources can be characterized by applying a parametric fit model, to extract information for optimum pupil setup, and by importing the measured source bitmap into an imaging simulator to directly evaluate its impact on CD and overlay. We compare measured freeform sources from both illuminator types and demonstrate the good matching between measured FlexRay and DOE based freeform source shapes.

Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells

The use of customized illumination modes is part of the pursuit to stretch the applicability of immersion ArF lithography. Indeed, a specific illumination source shape that is optimized for a particular design leads to enhanced imaging results. Recently, freeform illumination has become available through pixelated DOEs or through FlexRayTM, ASMLs programmable illuminator system, allowing for virtually unconstrained intensity distribution within the source pupil. In this paper, the benefit of freeform over traditional illumination is evaluated, by applying source mask co-optimization (SMO) for an aggressive use case, and wafer-based verification. For a 22 nm node SRAM of 0.099 μm² and 0.078 μm2 bit cell area, the patterning of the full contact and metal layer into a hard mask is demonstrated with the application of SMO and freeform illumination. In this work, both pixelated DOEs and FlexRay are applied. Additionally, the match between the latter two is confirmed on wafer, in terms of CD and process window.

How to describe polarization influence on imaging (Invited Paper)

We give a general introduction into polarized imaging and report on a Jones-pupil approach for a complete evaluation of the resulting optical performance. The Jones pupil assigns a Jones matrix to each point of the exit pupil describing the impact of both the global phase and the polarization on imaging. While we can learn already a lot about the optical system by taking a close look at the Jones pupil - and starting imaging simulations from it - a quantitative assessment is necessary for a complete evaluation of imaging. To do this, we generalize the concept of scalar Zernike aberrations to Jones-Zernike aberrations by expansion of the Jones pupil into vector polynomials. The resulting method is non-paraxial, i.e. the effect of the polarization dependent contrast loss for high numerical apertures is included. The aberrations of the Jones-matrix pupil are a suitable tool to identify the main drivers determining the polarization performance. Furthermore, they enable us to compare the polarized and the unpolarized performance of the such characterized lithographic system.

Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio

With higher NA (≫ 0.33) and increased chief-ray-angles, mask effects will significantly impact the overall scanner performance. We discuss these effects in detail, paying particular attention to the multilayer-absorber interaction, and show that there is a trade-off between image quality and reticle efficiency. We show that these mask effects for high NA can be solved by employing a reduction ratio <4X, and show several options for a high-NA optics. Carefully discussing the feasibility of these options is an important part of defining a high-NA EUV tool.

Experimental verification of source-mask optimization and freeform illumination for 22-nm node static random access memory cells

The use of customized illumination modes is part of the pursuit to stretch the applicability of immersion ArF lithography. Indeed, a specific illumination source shape that is optimized for a particular design leads to enhanced imaging results. Recently, freeform illumination has become available through pixelated diffractive optical elements or through ASMLs programmable illuminator system (FlexRayTM) allowing for virtually unconstrained intensity distribution within the source pupil. In this paper, the benefit of freeform over traditional illumination is evaluated, by applying source mask co-optimization (SMO) for an aggressive use case and wafer-based verification. For a 22-nm node SRAM of 0.099 and 0.078 μm2 bit cell area, the patterning of the full contact and metal layer into a hard mask is demonstrated with the application of SMO and freeform illumination. In this work, both pixelated diffractive optical elements and FlexRay are applied. Additionally, the match between the latter two is confirmed on wafer, in terms of critical dimension and process window.

Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

Abstract. The mask plays a significant role as an active optical element in lithography, for both deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Mask-induced and feature-dependent shifts of the best-focus position and other aberration-like effects were reported both for DUV immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively. Several strategies to compensate the mask-induced phase effects are discussed.

Interactions of 3D mask effects and NA in EUV lithography

With high NA (>0.33), and the associated higher angles of incidence on the reflective EUV mask, mask induced effects will significantly impact the overall scanner-performance. We discuss the expected effects in detail, in particular paying attention to the interaction between reflective coating and absorber on the mask, and show that there is a trade-off between image quality and mask efficiency. We show that by adjusting the demagnification of the lithography system one can recover both image quality and mask efficiency.

The impact of projection lens polarization properties on lithographic process at hyper-NA

The continuous implementation of novel technological advances in optical lithography is pushing the technology to ever smaller feature sizes. For instance, it is now well recognized that the 45nm node will be executed using state-of-the-art ArF (193nm) hyper-NA immersion-lithography. Nevertheless, a substantial effort will be necessary to make imaging enhancement techniques like hyper-NA immersion technology, polarized illumination or sophisticated illumination modes routinely available for production environments. In order to support these trends, more stringent demands need to be placed on the lithographic optics. Although this holds for both the illumination unit and the projection lens, this paper will focus on the latter module. Today, projection lens aberrations are well controlled and their lithographic impact is understood. With the advent of imaging enhancement techniques such as hyper-NA immersion lithography and the implementation of polarized illumination, a clear description and control of the state of polarization throughout the complete optical system is required. Before polarization was used to enhance imaging, the imaging properties at each field position of the lens could be fully characterized by 2 pupil maps: a phase map and a transmission map. For polarized imaging, these two maps are replaced by a 2x2 complex Jones matrix for each point in the pupil. Although such a pupil of Jones matrices (short: Jones pupil) allows for a full and accurate description of the physical imaging, it seems to lack transparency towards direct visualization and lithographic imaging relevance. In this paper we will present a comprehensive method to decompose the Jones pupils into quantities that represent a clear physical interpretation and we will study the relevance of these quantities for the imaging properties of lithography lenses.