Paul Sheridan

Simplified modeling of 13.5 nm unresolved transition array emission of a Sn plasma and comparison with experiment

One key aspect in the drive to optimize the radiative output of a laser-produced plasma for extreme ultraviolet lithography is the radiation transport through the plasma. In tin-based plasmas, the radiation in the 2% bandwidth at 13.5 nm is predominantly due to 4d-4f and 4p-4d transitions from a range of tin ions (Sn7+ to Sn12+). The complexity of the configurations involved in these transitions is such that a line-by-line analysis is, computationally, extremely intensive. This work seeks to model the emission profiles of each ion by treating the transition arrays statistically, thus greatly simplifying radiation transport modeling. The results of the model are compared with experimental spectra from tin-based laser-produced plasmas.

13.5nm extreme ultraviolet emission from tin based laser produced plasma sources

An examination of the influence of target composition and viewing angle on the extreme ultraviolet spectra of laser produced plasmas formed from tin and tin doped planar targets is reported. Spectra have been recorded in the 9–17nm region from plasmas created by a 700mJ, 15ns full width at half maximum intensity, 1064nm Nd:YAG laser pulse using an absolutely calibrated 0.25m grazing incidence vacuum spectrograph. The influence of absorption by tin ions (SnI–SnX) in the plasma is clearly seen in the shape of the peak feature at 13.5nm, while the density of tin ions in the target is also seen to influence the level of radiation in the 9–17nm region.

Spectroscopy of highly charged ions and its relevance to EUV and soft x-ray source development

The primary requirement for the development of tools for extreme ultraviolet lithography (EUVL) has been the identification and optimization of suitable sources. These sources must be capable of producing hundreds of watts of extreme ultraviolet (EUV) radiation within a wavelength bandwidth of 2% centred on 13.5 nm, based on the availability of Mo/Si multilayer mirrors (MLMs) with a reflectivity of ~70% at this wavelength. Since, with the exception of large scale facilities, such as free electron lasers, such radiation is only emitted from plasmas containing moderately to highly charged ions, the source development prompted a large volume of studies of laser produced and discharge plasmas in order to identify which ions were the strongest emitters at this wavelength and the plasma conditions under which their emission was optimized. It quickly emerged that transitions of the type 4p64dn − 4p54dn+1 + 4dn−14f in the spectra of Sn IX to SnXIV were the best candidates and work is still ongoing to establish the plasma conditions under which their emission at 13.5 nm is maximized. In addition, development of other sources at 6.X nm, where X ~ 0.7, has been identified as the wavelength of choice for so-called Beyond EUVL (BEUVL), based on the availability of La/B based MLMs, with theoretical reflectance approaching 80% at this wavelength. Laser produced plasmas of Gd and Tb have been identified as potential source elements, as n = 4 − n = 4 transitions in their ions emit strongly near this wavelength. However to date, the highest conversion efficiency (CE) obtained, for laser to BEUV energy emitted within the 0.6% wavelength bandwidth of the available mirrors is only 0.8%, compared with values of 5% for the 2% bandwidth relevant for the Mo/Si mirrors at 13.5 nm. This suggests a need to identify other potential sources or the selection of other wavelengths for BEUVL. This review deals with the atomic physics of the highly-charged ions relevant to EUV emission at these wavelengths. It considers the developments that have contributed to the realization of the 5% CE at 13.5 nm which underpins the production of high-volume lithography tools, and those that will be required to realize BEUV lithography.

Variable composition laser-produced Sn plasmas—a study of their time-independent ion distributions

The time-independent ion distributions of variable composition laser-produced Sn plasmas are studied for a wide range of electron temperatures and atomic number densities, the purpose of which is to elucidate the effect that varying the number density of Sn within a mixed species plasma has upon the steady state populations of Sn and its ions. Particular emphasis will be placed on binary mixtures of Sn with Li, C, O or Sm and more specifically the charge states Sn8+ to Sn13+ within these mixed plasmas, where it will be assumed that the plasma is optically thin. It is found that using these composites has relatively little effect upon the Sn ion population distributions for plasma atomic number densities of less than approximately 1019.5 cm−3. However, for greater values of number densities the Sn ion populations can be shifted by as much as 10–15 eV for Li mixtures. These results are of particular relevance to current research being carried out on extreme ultraviolet lithographic technologies for the optimization of XUV sources in the 13.5 nm wavelength region, which include composite target investigations.

A spatio-temporal study of variable composition laser-produced Sn plasmas

Laser-produced Sn plasmas are at present a major contender in the challenge to find a suitable replacement for the currently used excimer-laser technology, which has wavelengths of 248 and 193 nm, and that is utilized in projection lithography. These wavelengths are to be superseded by soft x-ray sources in the 13.5 nm wavelength regime for utilization in extreme ultraviolet lithographic (EUVL) technologies. To date, considerable international efforts have been channelled into the experimental realization and optimization of various tin based EUV sources. Therefore, in order to compliment these experimental accomplishments we have undertaken a spatio-temporal study of the free electron number density, atomic number density, average charge state and expansion kinetic energy of Sn and SnO2 plasmas. This has been achieved by coupling the collisional radiative equations to the one-dimensional Lagrangian fluid dynamic model MED103 (MEDUSA), thus obtaining the spatial and temporal histories of the aforementioned variables within a laser-produced plasma of spherical geometry, generated using a Gaussian laser pulse at 1064 nm. The evolution of ion stages Sn 4+ to Sn 13+ within a fluid cell is also presented. In addition, the dependence of the Sn fractional ion populations upon the atomic number density within variable composition plasmas of binary mixtures formed from Sn and oxygen and Sn combined with samarium is investigated. The overwhelming influence of both the atomic and free electron number densities within these plasmas is highlighted. (Some figures in this article are in colour only in the electronic version)

Sources for beyond extreme ultraviolet lithography and water window imaging

Lithography tools are being built and shipped to semiconductor manufacturers for high volume manufacturing using extreme ultraviolet lithography (EUVL) at a wavelength of 13.5 nm. This wavelength is based on the availability of Mo/Si multilayer mirrors (MLMs) with a reflectivity of ~70% at this wavelength. Moreover, the primary lithography tool manufacturer, ASML, has identified 6.x nm, where x~7, as the wavelength of choice for so-called Beyond EUVL, based on the availability of La/B4C MLMs, with theoretical reflectance approaching 80% at this wavelength. The optimum sources have been identified as laser produced plasmas of Gd and Tb, as n = 4–n = 4 transitions in their ions emit strongly near this wavelength. However, to date, the highest conversion efficiency obtained, for laser to EUV energy emitted within the 0.6% wavelength bandwidth of the mirror is only 0.8%, pointing to the need to identify other potential sources or consider the selection of other wavelengths. At the same time, sources for other applications are being developed. Conventional sources for soft x-ray microscopy use H-like line emission from liquid nitrogen or carbon containing liquid jets which can be focused using zone plates. Recently the possibility of using MLMs with n = 4−n = 4 emission from a highly charged Bi plasma was proposed and subsequently the possibility of using Δn = 1 transitions in 3rd row transition elements was identified. All of these studies seek to identify spectral features that coincide with the reflectance characteristics of available MLMs, determine the conditions under which they are optimized and establish the maximum conversion efficiencies obtainable. Thus, there is a need for systematic studies of laser produced plasmas of a wide range of elements as some of the challenges are similar for all of these sources and some recent results will be presented.

Laser triggered Z-pinch broadband extreme ultraviolet source for metrology

We compare the extreme ultraviolet emission characteristics of tin and galinstan (atomic %: Ga: 78.35, In: 14.93, Sn: 6.72) between 10 nm and 18 nm in a laser-triggered discharge between liquid metal-coated electrodes. Over this wavelength range, the energy conversion efficiency for galinstan is approximately half that of tin, but the spectrum is less strongly peaked in the 13–15 nm region. The extreme ultraviolet source dimensions were 110 ± 25 μm diameter and 500 ± 125 μm length. The flatter spectrum, and −19 °C melting point, makes this galinstan discharge a relatively simple high radiance extreme ultraviolet light source for metrology and scientific applications.

Robust liquid metal collector mirror for EUV and soft x-ray plasma sources

Recent work in UCD has centred on the development of a liquid metal coating process for EUV and soft X-ray collector optics. The work involves using a room temperature liquid metal coated on a solid metal substrate of the appropriate form. The advances made demonstrate that a stable thin coating film on the interior surface of a rotating optic substrate is possible, and this offers promise as a solution to the problem of producing an atomically flat reflector that remains unspoiled in front of a multi-kilowatt EUV plasma. We report on the results of preliminary EUV tests carried out on a simple focusing liquid metal mirror.

13.5 nm emission from composite targets containing tin

The aim of this study is to investigate ways to maximise the efficiency of tin based laser produced plasmas as sources of EUV radiation in the 2% band centered on 13.5 nm. It has been found that targets containing below 15% tin atoms by number emit more brightly in the spectral region around 13.5 nm than pure tin targets. Furthermore, if the remaining material in the target is composed on primarily low-Z atoms, then both plasma continuum radiation and Bremsstrahlung radiation are greatly reduced. In addition, if the target is illuminated with a prepulse, the conversion efficiency shows a distinct increase. The third parameter under examination is the laser power density, which controls the ion distribution in the plasma. The influence of low-Z atoms on the tin ion distribution in the plasma has been investigated and found to be of little consequence. Measurements were made in the region from 9-17 nm on an absolutely calibrated 0.25-m flat field grazing incidence spectrograph, and on two 2-m grazing incidence spectrographs. Spectra and conversion efficiency data from a range of target materials and illumination regimes are presented.

XUV spectra of 2nd transition row elements: identification of 3d–4p and 3d–4f transition arrays

The use of laser produced plasmas (LPPs) in extreme ultraviolet/soft x-ray lithography and metrology at 13.5 nm has been widely reported and recent research efforts have focused on developing next generation sources for lithography, surface morphology, patterning and microscopy at shorter wavelengths. In this paper, the spectra emitted from LPPs of the 2nd transition row elements from yttrium (Z = 39) to palladium (Z = 46), with the exception of zirconium (Z = 40) and technetium (Z = 43), produced by two Nd:YAG lasers which delivered up to 600 mJ in 7 ns and 230 mJ in 170 ps, respectively, are reported. Intense emission was observed in the 2–8 nm spectral region resulting from unresolved transition arrays (UTAs) due to 3d–4p, 3d–4f and 3p–3d transitions. These transitions in a number of ion stages of yttrium, niobium, ruthenium and rhodium were identified by comparison with results from Cowan code calculations and previous studies. The theoretical data were parameterized using the UTA formalism and the mean wavelength and widths were calculated and compared with experimental results.