Paul Zorabedian

Tuning fidelity of acoustooptically controlled external-cavity semiconductor lasers

External cavity semiconductor lasers in extended- and ring-cavity configurations were tuned with chirp-compensating pairs of acoustooptic filters. Nanometer-size tuning gaps observed by previous workers were eliminated. The tuning range was approximately 80 nm for the extended cavity and at least 55 nm for the ring cavity. The root-mean-square tuning error was 0.036 nm for the extended cavity and 0.018 nm for the ring cavity. The output could be swept up to 35 mm in as little as 10 msec, limited by the radio-frequency generator. Transmittance measurements made on spare acoustooptic filters using the extended-cavity laser as a swept source were in good agreement with quasi-static measurements made using a grating-tuned laser. >

Bistability in grating-tuned external-cavity semiconductor lasers

Bistability has been observed in the tuning characteristic and power versus current relation of a 1.3 μm grating-tuned external-cavity semiconductor laser. Tuning-direction reversal, current variations, and feedback interruption can change the output power and threshold current at a given wavelength. These effects are shown theoretically to be due to the coupling of the semiconductor gain and index of refraction. From measurements of the semiconductor chip facet reflectivity, solitary laser diode mode spectrum, and tuning curve in the presence of external feedback, the analysis yields values for the external feedback strength, semiconductor modal loss, and linewidth enhancement factor. Using an InGaAsP double-channel-planar-buried-heterostructure laser diode with a 4 percent reflectivity antireflection-coated facet inside an external cavity consisting of a 0.60 numerical aperture lens and a 1200 line/mm diffraction grating, we found 22 percent external feedback, 60 cm-1modal loss, and a linewidth enhancement factor \alpha = -7.1 .

Axial-mode instability in tunable external-cavity semiconductor lasers

The axial-mode instability of a tunable external-cavity semiconductor laser was studied experimentally and theoretically. Optical and radio-frequency (rf) spectra and time-domain traces show the laser output in progressive stages of instability. The optical sidemode ratio was used to experimentally characterize the wavelength and current dependencies of the instability. Measurements show a strong tendency for the sidemode ratio to degrade when the laser was tuned within wavelength bands occurring at the periodicity of the laser diode mode spacing. The probability of instability also increased with injection current. Analysis of the single-mode strong feedback rate equations shows that stability of an external-cavity mode is determined by the sign of the chirp reduction factor. A model for the physical origin of instability is provided. Calculations show that for facet reflectivities above a threshold value dependent on the external feedback level and the linewidth broadening factor, unstable and stable axial modes coexist in wavelength regions whose locations agree with regions where sidemode ratio degradation is observed. The stability boundary at which unstable axial modes appear is shown as a surface in the parameter space of facet reflectivity, feedback level, and linewidth broadening factor. >

Measurement of local stress in laser‐recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scattering

Raman microprobe measurements of stress have been performed on a laser‐recrystallized, seeded, lateral epitaxial silicon film on an oxidized silicon wafer. The direction‐averaged, planar tensile stress increased from 2×109 dyn/cm2 in the seed region to 5×109 dyn/cm2 in the silicon‐on‐insulator region at distances greater than 20 μm from the seed/silicon‐on‐insulator boundary. Grain‐boundary nucleation observed by optical Nomarski microscopy occurred approximately 11 μm from the seed edge in this film. Depth variations of the stress were observed by comparing measurements using 457‐nm and 514.5‐nm excitation wavelengths.

Characteristics of a grating-external-cavity semiconductor laser containing intracavity prism beam expanders

A grating tuned external cavity semiconductor laser incorporating a gradient-index rod lens and a pair of intracavity silicon prism beam expanders was constructed using a configuration aimed at simultaneously achieving the following objectives: the ability to operate at any external cavity longitudinal mode without tuning gaps caused by residual resonances of the laser diode cavity, stable feedback coupling between the diode and external cavities, narrow optical linewidth, and a high degree of external cavity longitudinal sidemode suppression. >