Peter Folmer Nielsen

Graphene Conductance Uniformity Mapping

We demonstrate a combination of micro four-point probe (M4PP) and non-contact terahertz time-domain spectroscopy (THz-TDS) measurements for centimeter scale quantitative mapping of the sheet conductance of large area chemical vapor deposited graphene films. Dual configuration M4PP measurements, demonstrated on graphene for the first time, provide valuable statistical insight into the influence of microscale defects on the conductance, while THz-TDS has potential as a fast, non-contact metrology method for mapping of the spatially averaged nanoscopic conductance on wafer-scale graphene with scan times of less than a minute for a 4-in. wafer. The combination of M4PP and THz-TDS conductance measurements, supported by micro Raman spectroscopy and optical imaging, reveals that the film is electrically continuous on the nanoscopic scale with microscopic defects likely originating from the transfer process, dominating the microscale conductance of the investigated graphene film.

Micro-four-point probe Hall effect measurement method

We report a new microscale Hall effect measurement method for characterization of semiconductor thin films without need for conventional Hall effect geometries and metal contact pads. We derive the electrostatic potential resulting from current flow in a conductive filamentary sheet with insulating barriers and with a magnetic field applied normal to the plane of the sheet. Based on this potential, analytical expressions for the measured four-point resistance in presence of a magnetic field are derived for several simple sample geometries. We show how the sheet resistance and Hall effect contributions may be separated using dual configuration measurements. The method differs from conventional van der Pauw measurements since the probe pins are placed in the interior of the sample region, not just on the perimeter. We experimentally verify the method by micro-four-point probe measurements on ultrashallow junctions in silicon and germanium. On a cleaved silicon ultrashallow junction sample we determine carrier mobility, sheet carrier density, and sheet resistance from micro-four-point probe measurements under various experimental conditions, and show with these conditions reproducibility within less than 1.5%.

Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions

In this comparative study, the authors demonstrate the relationship∕correlation between macroscopic and microscopic four-point sheet resistance measurements on laser annealed ultra-shallow junctions (USJs). Microfabricated cantilever four-point probes with probe pitch ranging from 1.5to500μm have been used to characterize the sheet resistance uniformity of millisecond laser annealed USJs. They verify, both experimentally and theoretically, that the probe pitch of a four-point probe can strongly affect the measured sheet resistance. Such effect arises from the sensitivity (or “spot size”) of an in-line four-point probe. Their study shows the benefit of the spatial resolution of the micro four-point probe technique to characterize stitching effects resulting from the laser annealing process.

Fast and direct measurements of the electrical properties of graphene using micro four-point probes

We present measurements of the electronic properties of graphene using a repositionable micro four-point probe system, which we show here to have unique advantages over measurements made on lithographically defined devices; namely speed, simplicity and lack of a need to pattern graphene. Measurements are performed in ambient, vacuum and controlled environmental conditions using an environmental scanning electron microscope (SEM). The results are comparable to previous results for microcleaved graphene on silicon dioxide (SiO(2)). We observe a pronounced hysteresis of the charge neutrality point, dependent on the sweep rate of the gate voltage; and environmental measurements provide insight into the sensor application prospects of graphene. The method offers a fast, local and non-destructive technique for electronic measurements on graphene, which can be positioned freely on a graphene flake.

Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

DTU Orbit (15/03/2019) Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.

Electrically continuous graphene from single crystal copper verified by terahertz conductance spectroscopy and micro four-point probe.

The electrical performance of graphene synthesized by chemical vapor deposition and transferred to insulating surfaces may be compromised by extended defects, including for instance grain boundaries, cracks, wrinkles, and tears. In this study, we experimentally investigate and compare the nano- and microscale electrical continuity of single layer graphene grown on centimeter-sized single crystal copper with that of previously studied graphene films, grown on commercially available copper foil, after transfer to SiO2 surfaces. The electrical continuity of the graphene films is analyzed using two noninvasive conductance characterization methods: ultrabroadband terahertz time-domain spectroscopy and micro four-point probe, which probe the electrical properties of the graphene film on different length scales, 100 nm and 10 μm, respectively. Ultrabroadband terahertz time-domain spectroscopy allows for measurement of the complex conductance response in the frequency range 1-15 terahertz, covering the entire intraband conductance spectrum, and reveals that the conductance response for the graphene grown on single crystalline copper intimately follows the Drude model for a barrier-free conductor. In contrast, the graphene grown on commercial copper foil shows a distinctly non-Drude conductance spectrum that is better described by the Drude-Smith model, which incorporates the effect of preferential carrier backscattering associated with extended, electronic barriers with a typical separation on the order of 100 nm. Micro four-point probe resistance values measured on graphene grown on single crystalline copper in two different voltage-current configurations show close agreement with the expected distributions for a continuous 2D conductor, in contrast with previous observations on graphene grown on commercial copper foil. The terahertz and micro four-point probe conductance values of the graphene grown on single crystalline copper shows a close to unity correlation, in contrast with those of the graphene grown on commercial copper foil, which we explain by the absence of extended defects on the microscale in CVD graphene grown on single crystalline copper. The presented results demonstrate that the graphene grown on single crystal copper is electrically continuous on the nanoscopic, microscopic, as well as intermediate length scales.

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n+/p junctions. Using LTA, high carrier concentration above 1020 cm-3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode ION/IOFF ratio ~105 and ideality factor (n) ~1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high ION/IOFF ratio ~107 and n ~1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.

High precision micro-scale Hall effect characterization method using in-line micro four-point probes

Accurate characterization of ultra shallow junctions (USJ) is important in order to understand the principles of junction formation and to develop the appropriate implant and annealing technologies. We investigate the capabilities of a new micro-scale Hall effect measurement method where Hall effect is measured with collinear micro four-point probes (M4PP). We derive the sensitivity to electrode position errors and describe a position error suppression method to enable rapid reliable Hall effect measurements with just two measurement points. We show with both Monte Carlo simulations and experimental measurements, that the repeatability of a micro-scale Hall effect measurement is better than 1 %. We demonstrate the ability to spatially resolve Hall effect on micro-scale by characterization of an USJ with a single laser stripe anneal. The micro sheet resistance variations resulting from a spatially inhomogeneous anneal temperature are found to be directly correlated to the degree of dopant activation.

Micro-uniformity during laser anneal: metrology and physics

Maintaining or improving device performance while scaling semiconductor devices, necessitates the development of extremely shallow ( In this work we use optimized metrology to probe such macro- and micro non-uniformity and determine the origin of the various components contributing to the observed non-uniformity patterns (laser stitching patterns, laser beam uniformity, optical path) and their impact on the local sheet resistance.

Micro-Scale Sheet Resistance Measurements on Ultra Shallow Junctions

The paper reports a new method for measuring sheet resistance on implanted wafers by using micro-fabricated four-point probes with a tip-to-tip spacing of a few microns. These microscopic probes have a contact force five orders of magnitude smaller than conventional probes, and can perform local non-destructive ultra shallow junction (USJ) sheet resistance measurements on both blanket and patterned wafers. The authors demonstrate this new technique on laser annealed wafers, measuring micro-scale sheet resistance variations on wafers that appear homogeneous when mapped with conventional four-point probes. The microscopic four-point probes detect stitching effects caused by laser spot overlap/misalignment during the annealing process. The findings indicate that such local sheet resistance in-homogeneities average out in conventional four-point measurements, and that new metrology is therefore needed to fully characterize USJ wafers activated by laser anneal and other diffusion-less methods